Engineering the Band Gap States of the Rutile TiO<sub>2</sub> (110) Surface by Modulating the Active Heteroatom.

Engineering the Band Gap States of the Rutile TiO₂ (110) Surface by Modulating the Active Heteroatom.

Yu, Yaoguang; Yang, Xu; Zhao, Yanling; Zhang, Xiangbin; An, Liang; Huang, Miaoyan; Chen, Gang; Zhang, Ruiqin.

Afiliação

Yu Y; MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, P. R. China.
Yang X; Department of Physics, City University of Hong Kong, Hong Kong SAR, P. R. China.
Zhao Y; MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, P. R. China.
Zhang X; Department of Physics, City University of Hong Kong, Hong Kong SAR, P. R. China.
An L; Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China.
Huang M; MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, P. R. China.
Chen G; Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong SAR, P. R. China.
Zhang R; Department of Physics, City University of Hong Kong, Hong Kong SAR, P. R. China.

Angew Chem Int Ed Engl ; 57(28): 8550-8554, 2018 07 09.

Article em En | MEDLINE | ID: mdl-29676041