Ultralow Lattice Thermal Conductivity in SnTe by Incorporating InSb.
ACS Appl Mater Interfaces
; 12(19): 21863-21870, 2020 May 13.
Article
em En
| MEDLINE
| ID: mdl-32314903
ABSTRACT
Herein, a series of (Sn1.06Te)1-x-(InSb)x (x = 0, 0.025, 0.05, 0.075) samples are fabricated, and their thermoelectric performances are studied. The all-scale structure defects containing the atomic-scale In doping defects, the nanoscale Sb precipitates, and the mesoscale grain boundary scatter phonons collectively in a wide range of frequencies to give the ultralow lattice thermal conductivity. Concurrently, the incorporation of InSb decreases carrier concentration with marginal loss in carrier mobility, resulting in a little variation of electrical properties over a wide temperature range. The significantly decreased thermal conductivity and the preserved high power factor lead to a maximum ZT value of â¼0.84 at 823 K in the (Sn1.06Te)0.95(InSb)0.05 sample. This strategy of rapidly constructing all-scale structure defects could be applied to other thermoelectric systems to enhance thermoelectric performance.
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Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2020
Tipo de documento:
Article
País de afiliação:
China