Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process.

Photoelectric Characteristics of a Large-Area n-MoS₂/p-Si Heterojunction Structure Formed through Sulfurization Process.

Kim, Yoonsok; Kim, Taeyoung; Kim, Eun Kyu.

Afiliação

Kim Y; Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea.
Kim T; Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea.
Kim EK; Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea.

Sensors (Basel) ; 20(24)2020 Dec 21.

Article em En | MEDLINE | ID: mdl-33371287