Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process.

Zhu, Chao-Yi; Peng, Song-Ang; Zhang, Xiao-Rui; Yao, Yao; Huang, Xin-Nan; Yan, Yun-Peng; Zhang, Da-Yong; Shi, Jing-Yuan; Jin, Zhi.

Afiliação

Zhu CY; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
Peng SA; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Zhang XR; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
Yao Y; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Huang XN; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
Yan YP; University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Zhang DY; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
Shi JY; Department of Chemistry, City University of Hong Kong, Hong Kong 999077, Hong Kong, People's Republic of China.
Jin Z; High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.