Enhanced electronic and optical properties of multi-layer arsenic via strain engineering.

Bai, Lingling; Gao, Yifan; Hu, Peiju; Zhang, Runqing; Wen, Minru; Zhang, Xin; Wu, Fugen; Zheng, Zhaoqiang; Dong, Huafeng; Zhang, Gang.

Afiliação

Bai L; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Gao Y; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Hu P; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Zhang R; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Wen M; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Zhang X; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Wu F; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Zheng Z; Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Dong H; School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
Zhang G; School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.