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Atomic Insight into the Successive Antiferroelectric-Ferroelectric Phase Transition in Antiferroelectric Oxides.
Jiang, Ru-Jian; Cao, Yi; Geng, Wan-Rong; Zhu, Mei-Xiong; Tang, Yun-Long; Zhu, Yin-Lian; Wang, Yujia; Gong, Fenghui; Liu, Su-Zhen; Chen, Yu-Ting; Liu, Jiaqi; Liu, Nan; Wang, Jing-Hui; Lv, Xiao-Dong; Chen, Shuang-Jie; Ma, Xiu-Liang.
Afiliação
  • Jiang RJ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Cao Y; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China.
  • Geng WR; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Zhu MX; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China.
  • Tang YL; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China.
  • Zhu YL; Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China.
  • Wang Y; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Gong F; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China.
  • Liu SZ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Chen YT; Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China.
  • Liu J; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Liu N; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Wang JH; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China.
  • Lv XD; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
  • Chen SJ; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang110016, People's Republic of China.
  • Ma XL; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang110016, People's Republic of China.
Nano Lett ; 23(4): 1522-1529, 2023 Feb 22.
Article em En | MEDLINE | ID: mdl-36722976
ABSTRACT
Antiferroelectrics characterized by voltage-driven reversible transitions between antiparallel and parallel polarity are promising for cutting-edge electronic and electrical power applications. Wide-ranging explorations revealing the macroscopic performances and microstructural characteristics of typical antiferroelectric systems have been conducted. However, the underlying mechanism has not yet been fully unraveled, which depends largely on the atomistic processes. Herein, based on atomic-resolution transmission electron microscopy, the deterministic phase transition pathway along with the underlying lattice-by-lattice details in lead zirconate thin films was elucidated. Specifically, we identified a new type of ferrielectric-like dipole configuration with both angular and amplitude modulations, which plays the role of a precursor for a subsequent antiferroelectric to ferroelectric transformation. With the participation of the ferrielectric-like phase, the phase transition pathways driven by the phase boundary have been revealed. We provide new insights into the consecutive phase transformation in low-dimensional lead zirconate, which thus would promote potential antiferroelectric-based multifunctional devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article