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Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková, Alice; Hájek, Frantisek; Hubácek, Tomás; Gedeonová, Zuzana; Hubík, Pavel; Hývl, Matej; Pangrác, Jirí; Dominec, Filip; Kosutová, Tereza.
Afiliação
  • Hospodková A; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Hájek F; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Hubácek T; Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Brehová 7, 11519 Prague 1, Czech Republic.
  • Gedeonová Z; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Hubík P; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Hývl M; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Pangrác J; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Dominec F; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
  • Kosutová T; Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic.
ACS Appl Mater Interfaces ; 15(15): 19646-19652, 2023 Apr 19.
Article em En | MEDLINE | ID: mdl-37022802
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: República Tcheca
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: República Tcheca