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High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition.
Cho, Min Hoe; Choi, Cheol Hee; Kim, Min Jae; Hur, Jae Seok; Kim, Taikyu; Jeong, Jae Kyeong.
Afiliação
  • Cho MH; Department of Process Development, Samsung Display, Yongin 17113, South Korea.
  • Choi CH; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Kim MJ; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Hur JS; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Kim T; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
  • Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
ACS Appl Mater Interfaces ; 15(15): 19137-19151, 2023 Apr 19.
Article em En | MEDLINE | ID: mdl-37023364
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Coréia do Sul
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Coréia do Sul