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A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.
Jin, Xiaoshi; Zhang, Shouqiang; Zhao, Chunrong; Li, Meng; Liu, Xi.
Afiliação
  • Jin X; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China. xsjin@live.cn.
  • Zhang S; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Zhao C; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Li M; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Liu X; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
Discov Nano ; 18(1): 57, 2023 Mar 24.
Article em En | MEDLINE | ID: mdl-37382762
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China