Your browser doesn't support javascript.
loading
Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer.
Kim, Juri; Park, Yongjin; Lee, Jung-Kyu; Kim, Sungjun.
Afiliação
  • Kim J; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
  • Park Y; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
  • Lee JK; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
  • Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.
J Chem Phys ; 159(21)2023 Dec 07.
Article em En | MEDLINE | ID: mdl-38054517
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Coréia do Sul
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Coréia do Sul