Direct imaging of electron states in open quantum dots.

We use scanning gate microscopy to probe the ballistic motion of electrons within an open GaAs/AlGaAs quantum dot. Conductance maps are recorded by scanning a biased tip over the open quantum dot while a magnetic field is applied. We show that, for specific magnetic fields, the measured conductance images resemble the classical transmitted and backscattered trajectories and their quantum mechanical analogue. In addition, we prove experimentally, with this direct measurement technique, the existence of pointer states. The demonstrated direct imaging technique is essential for the fundamental understanding of wave function scarring and quantum decoherence theory.

Periodic scarred States in open quantum dots as evidence of quantum Darwinism.

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Subband anticrossing and the spin Hall effect in quantum wires.

We report on numerical simulations of the intrinsic spin Hall effect in semiconductor quantum wires as a function of the Rashba spin-orbit coupling strength, the electron density, and the width of the wire. We find that the strength of the spin Hall effect does not depend monotonically on these parameters, but instead exhibits a local maximum. This behavior is explained by considering the dispersion relation of the electrons in the wire, which is characterized by the anticrossing of adjacent subbands. These results lead to a simple estimate of the optimal wire width for spin Hall transport experiments, and simulations indicate that this optimal width is independent of disorder. The anticrossing of adjacent subbands is related to a quantum phase transition in momentum space, and is accompanied by an enhancement of the Berry curvature and subsequently in the magnitude of the spin Hall effect.

Imaging scarred states in quantum dots.

We have used the scanning gate microscopy technique to image scar structures in an open quantum dot, fabricated in an InAs quantum well and defined by electron beam lithography. These are shown to have a periodicity in magnetic field that correlates with that found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dots.

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors.

High electron mobility transistors (HEMTs) have become important for high frequency and low noise applications. There are devices now operating with a cutoff frequency, f(T), of several 100 GHz. Through simulation, we have been investigating how these frequencies may be pushed even higher, and have found that it may be possible to achieve an f(T) of over 3 THz. For this, we have used a full-band, cellular Monte Carlo transport program, coupled to a full Poisson solver, to study a variety of InAs-rich, InGaAs pseudomorphic HEMTs and their response at high frequency, concentrating on devices with a structure (from the substrate) InP/InAlAs/InGaAs/InAlAs/InGaAs, with the quantum well composed of In(0.75)Ga(0.25)As. We have studied gate lengths over the range 10-70 nm and various source-drain spacings. The performance of scaled devices has been evaluated to determine the ultimate frequency limit. Here, the importance of the effective gate length has been evaluated from the properties internal to the device.

Signatures of dynamical tunneling in semiclassical quantum dots.

We study transport in large, and strongly open, quantum dots, which might typically be viewed as lying well within the semiclassical regime. The low-temperature magnetoresistance of these structures exhibits regular fluctuations, with just a small number of dominant frequency components, indicative of the presence of dynamical tunneling into regular orbits. Support for these ideas is provided by the results of numerical simulations, which reveal wave function scarring by classically inaccessible orbits, which is found to persist even in the presence of a moderately disordered dot potential. Our results suggest that dynamical tunneling may play a more generic role in transport through mesoscopic structures than has thus far been appreciated.

Scanning gate imaging of a disordered quantum point contact.

Scanning gate microscopy (SGM) is a novel technique that has been used to image characteristic features related to the coherent electron flow in mesoscopic structures. For instance, SGM has successfully been applied to study peculiar electron transport properties that arise due to small levels of disorder in a system. The particular case of an InGaAs quantum well layer in a heterostructure, which is dominated by a quasi-ballistic regime, was analyzed. A quantum point contact fabricated onto this material exhibits conduction fluctuations that are not expected in typical high-mobility heterostructures such as AlGaAs/GaAs. SGM revealed not only interference patterns corresponding to specific conductance fluctuations but also mode-dependent resistance peaks corresponding to the first and second quantum levels of conductance (2e(2)/h) at zero magnetic field. On the other hand, clear conductance plateaus originating from the integer quantum Hall effect were observed at high magnetic fields. The physical size of incompressible edge channels was estimated from cross-sectional analysis of these images.

Conductance fluctuations in semiconductor nanostructures.

Conductance fluctuations have been seen in semiconductors and graphene for quite some time. It has generally been believed that a universality existed in which the conductance variance was the same for variations in energy and magnetic field, although some experiments have questioned this view. Here, we use numerical simulations to show that fluctuations in magneto-conductance are typically smaller than those in energy by as much as a factor of 3. Moreover, the amplitude of the fluctuations in each case varies with the strength of the random potential.

Open quantum dots: II. Probing the classical to quantum transition.

Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. An important question concerns the manner in which these classical states evolve into the set of quantum states that populate the dot in the quantum limit. In the reverse direction, the manner in which the quantum states evolve to the classical world is governed strongly by Zurek's decoherence theory. This was discussed from the quantum perspective in an earlier review (Ferry et al 2011 Semicond. Sci. Technol. 26 043001). Here, we discuss the nature of the various classical states, how they are formed, how they progress to the quantum world, and the signatures that they create in magnetotransport and general conductance studies of these dots.

Anisotropic intrinsic spin Hall effect in quantum wires.

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [N110] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications.