Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE.

Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiNx. We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5µm long GaN nanowires.

Experimental Observation of Flat Bands in One-Dimensional Chiral Magnonic Crystals.

Spin waves represent the collective excitations of the magnetization field within a magnetic material, providing dispersion curves that can be manipulated by material design and external stimuli. Bulk and surface spin waves can be excited in a thin film with positive or negative group velocities and, by incorporating a symmetry-breaking mechanism, magnetochiral features arise. Here we study the band diagram of a chiral magnonic crystal consisting of a ferromagnetic film incorporating a periodic Dzyaloshinskii-Moriya coupling via interfacial contact with an array of heavy-metal nanowires. We provide experimental evidence for a strong asymmetry of the spin wave amplitude induced by the modulated interfacial Dzyaloshinskii-Moriya interaction, which generates a nonreciprocal propagation. Moreover, we observe the formation of flat spin-wave bands at low frequencies in the band diagram. Calculations reveal that depending on the perpendicular anisotropy, the spin-wave localization associated with the flat modes occurs in the zones with or without Dzyaloshinskii-Moriya interaction.

Block-Copolymers Enable Direct Reduction and Structuration of Noble Metal-Based Films.

Noble metal nanostructured films are of great interest for various applications including electronics, photonics, catalysis, and photocatalysis. Yet, structuring and patterning noble metals, especially those of the platinum group, is challenging by conventional nanofabrication. Herein, an approach based on solution processing to obtain metal-based films (rhodium, ruthenium (Ru) or iridium in the presence of residual organic species) with nanostructuration at the 20 nm-scale is introduced. Compared to existing approaches, the dual functionality of block-copolymers acting both as structuring and as reducing agent under inert atmosphere is exploited. A set of in situ techniques has allowed for the capturing of the carbothermal reduction mechanism occurring at the hybrid organic/inorganic interface. Differently from previous literature, a two-step reduction mechanism is unveiled with the formation of a carbonyl intermediate. From a technological point of view, the materials can be solution-processed on a large scale by dip-coating as polymers and simultaneously structured and reduced into metals without requiring expensive equipment or treatments in reducing atmosphere. Importantly, the metal-based films can be patterned directly by block-copolymer lithography or by soft-nanoimprint lithography on various substrates. As proof-of-concept of application, the authors demonstrate that nanostructured Ru films can be used as efficient catalysts for H2 generation into microfluidic reactors.

Cathodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowires.

Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samples. We evidence an electron concentration gradient ranging from below 1 × 1018cm-3to 3.3 ×1018cm-3along the axis of a GaAs:Te nanowire grown at 640 °C, and a homogeneous electron concentration of around 6-8 × 1017cm-3along the axis of a GaAs:Te nanowire grown at 620 °C. The differences in the electron concentration levels and gradients between the two nanowires is attributed to different Te incorporation efficiencies by vapor-solid and vapor-liquid-solid processes.

Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing.

Metal-assisted chemical etching (MACE) has emerged as an effective method to fabricate high aspect ratio nanostructures. This method requires a catalytic mask that is generally composed of a metal. Here, we challenge the general view that the catalyst needs to be a metal by introducing oxide-assisted chemical etching (OACE). We perform etching with metal oxides such as RuO2 and IrO2 by transposing materials used in electrocatalysis to nanofabrication. These oxides can be solution-processed as polymers exhibiting similar capabilities of metals for MACE. Nanopatterned oxides can be obtained by direct nanoimprint lithography or block-copolymer lithography from chemical solution on a large scale. High aspect ratio silicon nanostructures were obtained at the sub-20 nm scale exclusively by cost-effective solution processing by halving the number of fabrication steps compared to MACE. In general, OACE is expected to stimulate new fundamental research on chemical etching assisted by other materials, providing new possibilities for device fabrication.

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Axial p-n and p-i-n junctions in GaAs0.7P0.3 nanowires are demonstrated and analyzed using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays are grown by molecular beam epitaxy on nanopatterned Si substrates. The nanowires are doped using Be and Si impurities to obtain p- and n-type conductivity, respectively. A method to determine the doping type by analyzing the induced current in the vicinity of a Schottky contact is proposed. It is demonstrated that for the applied growth conditions using Ga as a catalyst, Si doping induces an n-type conductivity contrary to the GaAs self-catalyzed nanowire case, where Si was reported to yield a p-type doping. Active axial nanowire p-n junctions having a homogeneous composition along the axis are synthesized and the carrier concentration and minority carrier diffusion lengths are measured. To the best of our knowledge, this is the first report of axial p-n junctions in self-catalyzed GaAsP nanowires.

Evidence and control of unintentional As-rich shells in GaAs1-x P x nanowires.

We report on the detailed composition of ternary GaAsP nanowires (NWs) grown using self-catalyzed vapor-liquid-solid (VLS) growth by molecular beam epitaxy. We evidence the formation of an unintentional shell, which enlarges by vapor-solid growth concurrently to the main VLS-grown core. The NW core and unintentional shell have typically different chemical compositions if no effort is made to adjust the growth conditions. The compositions can be made equal by changing the substrate temperature and the P/As flux ratio in the vapor phase. In all cases, we still observe the existence of a P-rich interface between the GaAsP NW core and the unintentional shell, even if favorable growth conditions are used.

Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays.

The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is technologically relevant, but the growth dynamic is rather complex due to the superposition of severe shadowing effects that vary with array pitch, NW diameter, NW height, and growth duration. By inserting GaAsP marker layers at a regular time interval during the growth of a self-catalyzed GaP NW array, we are able to retrieve precisely the time evolution of the diameter and height of a single NW. We then propose a simple numerical scheme which fully computes shadowing effects at play in infinite arrays of NWs. By confronting the simulated and experimental results, we infer that re-emission of Ga from the mask is necessary to sustain the NW growth while Ga migration on the mask must be negligible. When compared to random cosine or random uniform re-emission from the mask, the simple case of specular reflection on the mask gives the most accurate account of the Ga balance during the growth.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies.

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.

We present an effective method of determining the doping level in n-type III-V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein-Moss shift) and the broadening of luminescence spectra are signatures of increased electron densities. They are compared to the CL spectra of calibrated Si-doped GaAs layers, whose doping levels are determined by Hall measurements. We apply the generalized Planck's law to fit the whole spectra, taking into account the electron occupation in the conduction band, the bandgap narrowing, and band tails. The electron Fermi levels are used to determine the free electron concentrations, and we infer nanowire doping of 6 × 1017 to 1 × 1018 cm-3. These results show that cathodoluminescence provides a robust way to probe carrier concentrations in semiconductors with the possibility of mapping spatial inhomogeneities at the nanoscale.

Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping.

Ultrathin c-Si solar cells have the potential to drastically reduce costs by saving raw material while maintaining good efficiencies thanks to the excellent quality of monocrystalline silicon. However, efficient light trapping strategies must be implemented to achieve high short-circuit currents. We report on the fabrication of both planar and patterned ultrathin c-Si solar cells on glass using low temperature (T < 275 °C), low-cost, and scalable techniques. Epitaxial c-Si layers are grown by PECVD at 160 °C and transferred on a glass substrate by anodic bonding and mechanical cleavage. A silver back mirror is combined with a front texturation based on an inverted nanopyramid array fabricated by nanoimprint lithography and wet etching. We demonstrate a short-circuit current density of 25.3 mA/cm(2) for an equivalent thickness of only 2.75 µm. External quantum efficiency (EQE) measurements are in very good agreement with FDTD simulations. We infer an optical path enhancement of 10 in the long wavelength range. A simple propagation model reveals that the low photon escape probability of 25% is the key factor in the light trapping mechanism. The main limitations of our current technology and the potential efficiencies achievable with contact optimization are discussed.

Improving image contrast in fluorescence microscopy with nanostructured substrates.

Metallic and dielectric nanostructures can show sharp contrasted resonances, sensitive to the environment, and high field enhancement in sub-wavelength volumes. For this reason, these structures are commonly used as molecular sensors. Only few works have focused on their application in optical microscopy, in particular in superresolution. In this work we have designed, fabricated and optically tested a nanostructured TiO(2) substrate, fabricated by direct embossing of TiO(2) derived film, as a substrate for fluorescence microscopy. Moreover, using numerical simulations, we have compared the signal to background noise with respect to other metallo-dielectric structures. We show that the TiO(2) structure is a good candidate for reducing the thickness of the fluorescence excitation down to ~100 nm. Therefore, this substrate can be used to obtain Total Internal Reflection (TIRF) axial resolution without a TIRF-Microscopy system.

Thermo-temporal physisorption in metal-organic frameworks probed by cyclic thermo-ellipsometry.

Temperature-induced sorption in porous materials is a well-known process. What is more challenging is to determine how the rate at which temperature is varied affects these processes. To address this question, we introduce a methodology called "cyclic thermo-ellipsometry" to explore the thermo-kinetics of vapor physisorption in metal-organic framework films.

λ³/1000 plasmonic nanocavities for biosensing fabricated by soft UV nanoimprint lithography.

Arrays of plasmonic nanocavities with very low volumes, down to λ(3)/1000, have been fabricated by soft UV nanoimprint lithography. Nearly perfect omnidirectional absorption (3-70°) is demonstrated for the fundamental mode of the cavity (λ ≃ 1.15 µm). The second-order mode exhibits a sharper resonance with strong angular dependence and total optical absorption when the critical coupling condition is fulfilled (45-50°, λ ≃ 750 nm). It leads to high refractive index sensitivity (405 nm/RIU) and figure of merit (∼21) and offers new perspectives for efficient biosensing experiments in ultralow volumes.

Deep X-ray lithography on "sol-gel" processed noble metal mesoarchitectured films.

Noble metal coordination xerogel films (mesostructured with block-copolymers) exhibit solubility switching with increasing X-ray irradiation. Different from other sol-gel systems, these are attributed to film deconstruction under irradiation. These materials can be used as recyclable negative tone resists for deep X-ray lithography that can be further converted into metallic nanoarchitectured films.

GaAs/GaInP nanowire solar cell on Si with state-of-the-art Voc and quasi-Fermi level splitting.

With their unique structural, optical and electrical properties, III-V nanowires (NWs) are an extremely attractive option for the direct growth of III-Vs on Si for tandem solar cell applications. Here, we introduce a core-shell GaAs/GaInP NW solar cell grown by molecular beam epitaxy on a patterned Si substrate, and we present an in-depth investigation of its optoelectronic properties and limitations. We report a power conversion efficiency of almost 3.7%, and a state-of-the-art open-circuit voltage (VOC) for a NW array solar cell on Si of 0.65 V. We also present the first quantification of the quasi-Fermi level splitting in NW array solar cells using hyperspectral photoluminescence measurements. A value of 0.84 eV is obtained at 1 sun (1.01 eV at 81 suns), which is significantly higher than qVOC. It indicates NWs with a better intrinsic optoelectronic quality than what could be expected from TEM images or deduced from electrical measurements. Optical and electronic simulations provide insights into the main absorption and electrical losses, and guidelines to design and fabricate higher-efficiency devices. It suggests that improvements at the n-type contact (GaInP/ITO) are key to unlocking the potential of next generation NW solar cells.

Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst.

We report the first investigation of indium (In) as the vapor-liquid-solid catalyst of GaP and InGaAs nanowires by molecular beam epitaxy. A strong asymmetry in the Ga distribution between the liquid and solid phases allows one to obtain pure GaP and In0.2Ga0.8As nanowires while the liquid catalyst remains nearly pure In. This uncommon In catalyst presents several advantages. First, the nanowire morphology can be tuned by changing the In flux alone, independently of the Ga and group V fluxes. Second, the nanowire crystal structure always remains cubic during steady state growth and catalyst crystallization, despite the low contact angle of the liquid droplet measured after growth (95°). Third, the vertical yield of In-catalyzed GaP and (InGa)As nanowire arrays on patterned silicon substrates increases dramatically. Combining straight sidewalls, controllable morphologies and a high vertical yield, In-catalysts provide an alternative to the standard Au or Ga alloys for the bottom-up growth of large scale homogeneous arrays of (InGa)As or GaP nanowires.

Metasurface-based total internal reflection microscopy.

Recent years have seen a tremendous progress in the development of dielectric metasurfaces for visible light applications. Such metasurfaces are ultra-thin optical devices that can manipulate optical wavefronts in an arbitrary manner. Here, we present a newly developed metasurface which allows for coupling light into a microscopy coverslip to achieve total internal reflection (TIR) excitation. TIR fluorescence microscopy (TIRFM) is an important bioimaging technique used specifically to image cellular membranes or surface-localized molecules with high contrast and low background. Its most commonly used modality is objective-type TIRFM where one couples a focused excitation laser beam at the edge of the back focal aperture of an oil-immersion objective with high numerical aperture (N.A.) to realize a high incident-angle plane wave excitation above the critical TIR angle in sample space. However, this requires bulky and expensive objectives with a limited field-of-view (FOV). The metasurface which we describe here represents a low cost and easy-to-use alternative for TIRFM. It consists of periodic 2D arrays of asymmetric structures fabricated in TiO2 on borosilicate glass. It couples up to 70% of the incident non-reflected light into the first diffraction order at an angle of 65° in glass, which is above the critical TIR angle for a glass-water interface. Only ∼7% of the light leaks into propagating modes traversing the glass surface, thus minimizing any spurious background fluorescence originating far outside the glass substrate. We describe in detail design and fabrication of the metasurface, and validate is applicability for TIRFM by imaging immunostained human mesenchymal stem cells over a FOV of 200 µm x 200 µm. We envision that these kinds of metasurfaces can become a valuable tool for low-cost and TIRFM, offering high contrast, low photodamage, and high surface selectivity in fluorescence excitation and detection.

Following in Situ the Degradation of Mesoporous Silica in Biorelevant Conditions: At Last, a Good Comprehension of the Structure Influence.

Mesoporous silica nanoparticles (MSNs) have seen a fast development as drug delivery carriers thanks to their tunable porosity and high loading capacity. The employ of MSNs in biomedical applications requires a good understanding of their degradation behavior both to control drug release and to assess possible toxicity issues on human health. In this work, we study mesoporous silica degradation in biologically relevant conditions through in situ ellipsometry on model mesoporous nanoparticle or continuous thin films, in buffer solution and in media containing proteins. In order to shed light on the structure/dissolution relationship, we performed dissolution experiments far from soluble silicate species saturation. Via a complete decorrelation of dissolution and diffusion contributions, we proved unambiguously that surface area of silica vectors is the main parameter influencing dissolution kinetics, while thermal treatment and open mesoporous network architecture have a minor impact. As a logical consequence of our dissolution model, we proved that the dissolution lag-time can be promoted by selective blocking of the mesopores that limits the access to the mesoporous internal surface. This study was broadened by studying the impact of the organosilanes in the silica structure, of the presence of residual structuring agents, and of the chemical composition of the dissolution medium. The presence of albumin at blood concentration was found affecting drastically the dissolution kinetics of the mesoporous structure, acting as a diffusion barrier. Globally, we could identify the main factors affecting mesoporous silica materials degradation and proved that we can tune their structure and composition for adjusting dissolution kinetics in order to achieve efficient drug delivery.

Nanoplasmonics-enhanced label-free imaging of endothelial cell monolayer integrity.

Surface plasmon resonance imaging (SPRI) is a powerful label-free imaging modality for the analysis of morphological dynamics in cell monolayers. However, classical plasmonic imaging systems have relatively poor spatial resolution along one axis due to the plasmon mode attenuation distance (tens of µm, typically), which significantly limits their ability to resolve subcellular structures. We address this limitation by adding an array of nanostructures onto the metal sensing surface (25 nm thick, 200 nm width, 400 nm period grating) to couple localized plasmons with propagating plasmons, thereby reducing attenuation length and commensurately increasing spatial imaging resolution, without significant loss of sensitivity or image contrast. In this work, experimental results obtained with both conventional unstructured and nanostructured gold film SPRI sensor chips show a clear gain in spatial resolution achieved with surface nanostructuring. The work demonstrates the ability of the nanostructured SPRI chips to resolve fine morphological detail (intercellular gaps) in experiments monitoring changes in endothelial cell monolayer integrity following the activation of the cell surface protease-activated receptor 1 (PAR1) by thrombin. In particular, the nanostructured chips reveal the persistence of small intercellular gaps (<5 µm2) well after apparent recovery of cell monolayer integrity as determined by conventional unstructured surface based SPRI. This new high spatial resolution plasmonic imaging technique uses low-cost and reusable patterned substrates and is likely to find applications in cell biology and pharmacology by allowing label-free quantification of minute cell morphological activities associated with receptor dependent intracellular signaling activity.