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1.
Phys Chem Chem Phys ; 18(28): 18978-84, 2016 Jul 28.
Article in English | MEDLINE | ID: mdl-27354143

ABSTRACT

The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of a substrate, are investigated by first-principles calculations. The six-layered substrate, corrugated buffer layer, and slightly deformed monolayer graphene are all simulated. Adatom arrangements are thoroughly studied by analyzing the ground-state energies, bismuth adsorption energies, and Bi-Bi interaction energies of different adatom heights, inter-adatom distance, adsorption sites, and hexagonal positions. A hexagonal array of Bi atoms is dominated by the interactions between the buffer layer and the monolayer graphene. An increase in temperature can overcome a ∼50 meV energy barrier and induce triangular and rectangular nanoclusters. The most stable and metastable structures agree with the scanning tunneling microscopy measurements. The density of states exhibits a finite value at the Fermi level, a dip at ∼-0.2 eV, and a peak at ∼-0.6 eV, as observed in the experimental measurements of the tunneling conductance.

2.
Phys Chem Chem Phys ; 17(39): 26443-50, 2015 Oct 21.
Article in English | MEDLINE | ID: mdl-26392324

ABSTRACT

Hydrogenated silicenes possess peculiar properties owing to the strong H-Si bonds, as revealed by an investigation using first principles calculations. Various charge distributions, bond lengths, energy bands, and densities of states strongly depend on different hydrogen configurations and concentrations. The competition between strong H-Si bonds and weak sp(3) hybridization dominate the electronic properties. Chair configurations belong to semiconductors, while the top configurations show a nearly dispersionless energy band at the Fermi level. Both the systems display H-related partially flat bands at middle energy and the recovery of low-lying π bands during the reduction of concentration. Their densities of states exhibit prominent peaks at middle energy, and the top systems have a delta-funtion-like peak at E = 0. The intensity of these peaks is gradually weakened as the concentration decreases, providing an effective method to identify the H-concentration in scanning tunneling spectroscopy experiments.

3.
Phys Chem Chem Phys ; 14(47): 16409-14, 2012 Dec 21.
Article in English | MEDLINE | ID: mdl-23132378

ABSTRACT

The geometric and electronic properties of curved armchair graphene nanoribbons without hydrogen atoms are investigated by first-principles calculations. The edge-atom bond length and ground state energy dramatically vary with the arc angle. The zipping or unzipping requirements for energy, arc angle, and interaction distance depend on the ribbon width. The increasing curvatures lead to drastic changes in electronic structures, such as energy gaps, energy dispersions, band-edge states, band mixing, band overlap and state degeneracy. There exist semiconductor-metal transitions during the variation of curvature. These are associated with the contribution of the edge atoms, the competition between the π and σ bonds, and hybridization of the 2p(y) and 2p(z) orbitals. The main features of the energy bands dominate the frequency, height, number, and structure of the prominent peaks in the density of states. The predicted results could be examined by experimental measurements.

4.
Sci Rep ; 4: 6038, 2014 Aug 15.
Article in English | MEDLINE | ID: mdl-25123103

ABSTRACT

Edge-decorated graphene nanoribbons are investigated with the density functional theory; they reveal three stable geometric structures. The first type is a tubular structure formed by the covalent bonds of decorating boron or nitrogen atoms. The second one consists of curved nanoribbons created by the dipole-dipole interactions between two edges when decorated with Be, Mg, or Al atoms. The final structure is a flat nanoribbon produced due to the repulsive force between two edges; most decorated structures belong to this type. Various decorating atoms, different curvature angles, and the zigzag edge structure are reflected in the electronic properties, magnetic properties, and bonding configurations. Most of the resulting structures are conductors with relatively high free carrier densities, whereas a few are semiconductors due to the zigzag-edge-induced anti-ferromagnetism.

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