Real-time millimeter wave holography with an arrayed detector.

Millimeter and terahertz wave imaging has emerged as a powerful tool for applications such as security screening, biomedical imaging, and material analysis. However, intensity images alone are often insufficient for detecting variations in the dielectric constant of a sample, and extraction of material properties without additional phase information requires extensive prior knowledge of the sample. Digital holography provides a means for intensity-only detectors to reconstruct both amplitude and phase images. Here we utilize a commercially available source and detector array, both operating at room temperature, to perform digital holography in real-time for the first time in the mm-wave band (at 290 GHz). We compare the off-axis and phase-shifting approaches to digital holography and discuss their trade-offs and practical challenges in this regime. Owing to the low pixel count, we find phase-shifting holography to be the most practical and high fidelity approach for such commercial mm-wave cameras even under real-time operational requirements.

On-Chip Terahertz-Frequency Measurements of Liquids.

Terahertz-frequency-range measurements can offer potential insight into the picosecond dynamics, and therefore function, of many chemical systems. There is a need to develop technologies capable of performing such measurements in aqueous and polar environments, particularly when it is necessary to maintain the full functionality of biological samples. In this study, we present a proof-of-concept technology comprising an on-chip planar Goubau line, integrated with a microfluidic channel, which is capable of low-loss, terahertz-frequency-range spectroscopic measurements of liquids. We also introduce a mathematical model that accounts for changes in the electric field distribution around the waveguide, allowing accurate, frequency-dependent liquid parameters to be extracted. We demonstrate the sensitivity of this technique by measuring a homologous alcohol series across the 0.1-0.8 THz frequency range.

Quasi-continuous frequency tunable terahertz quantum cascade lasers with coupled cavity and integrated photonic lattice.

We demonstrate quasi-continuous tuning of the emission frequency from coupled cavity terahertz frequency quantum cascade lasers. Such coupled cavity lasers comprise a lasing cavity and a tuning cavity which are optically coupled through a narrow air slit and are operated above and below the lasing threshold current, respectively. The emission frequency of these devices is determined by the Vernier resonance of longitudinal modes in the lasing and the tuning cavities, and can be tuned by applying an index perturbation in the tuning cavity. The spectral coverage of the coupled cavity devices have been increased by reducing the repetition frequency of the Vernier resonance and increasing the ratio of the free spectral ranges of the two cavities. A continuous tuning of the coupled cavity modes has been realized through an index perturbation of the lasing cavity itself by using wide electrical heating pulses at the tuning cavity and exploiting thermal conduction through the monolithic substrate. Single mode emission and discrete frequency tuning over a bandwidth of 100 GHz and a quasi-continuous frequency coverage of 7 GHz at 2.25 THz is demonstrated. An improvement in the side mode suppression and a continuous spectral coverage of 3 GHz is achieved without any degradation of output power by integrating a π-phase shifted photonic lattice in the laser cavity.

Efficient, tunable flip-chip-integrated III-V/Si hybrid external-cavity laser array.

We demonstrate a surface-normal coupled tunable hybrid silicon laser array for the first time using passively-aligned, high-accuracy flip chip bonding. A 2x6 III-V reflective semiconductor optical amplifier (RSOA) array with integrated total internal reflection mirrors is bonded to a CMOS SOI chip with grating couplers and silicon ring reflectors to form a tunable hybrid external-cavity laser array. Waveguide-coupled wall plug efficiency (wcWPE) of 2% and output power of 3 mW has been achieved for all 12 lasers. We further improved the performance by reducing the thickness of metal/dielectric stacks and achieved 10mW output power and 5% wcWPE with the same integration techniques. This non-invasive, one-step back end of the line (BEOL) integration approach provides a promising solution to high density laser sources for future large-scale photonic integrated circuits.

Error-free operation of a polarization-insensitive 4λ x 25 Gbps silicon photonic WDM receiver with closed-loop thermal stabilization of Si microrings.

We report the first closed-loop operation of a 100 Gbps polarization-insensitive, 4-channel wavelength-tracking WDM receiver in silicon photonics platform. Error-free operation is achieved with input polarization scrambling over input wavelength change of 4.5 nm using efficient thermal tuning of Si microring demux, corresponding to greater than 60°C fluctuation in temperature.

On-chip picosecond pulse detection and generation using graphene photoconductive switches.

We report on the use of graphene for room temperature on-chip detection and generation of pulsed terahertz (THz) frequency radiation, exploiting the fast carrier dynamics of light-generated hot carriers, and compare our results with conventional low-temperature-grown gallium arsenide (LT-GaAs) photoconductive (PC) switches. Coupling of picosecond-duration pulses from a biased graphene PC switch into Goubau line waveguides is also demonstrated. A Drude transport model based on the transient photoconductance of graphene is used to describe the mechanism for both detection and generation of THz radiation.

Demonstration of 12.2% wall plug efficiency in uncooled single mode external-cavity tunable Si/III-V hybrid laser.

A Si/III-V hybrid laser has been a highly sought after device for energy-efficient and cost-effective high-speed silicon photonics communication. We present a high wall-plug efficiency external-cavity hybrid laser created by integrating an independently optimized SOI ring reflector and a III-V gain chip. In our demonstration, the uncooled integrated laser achieved a waveguide-coupled wall-plug efficiency of 12.2% at room temperature with an optical output power of ~10 mW. The laser operated single-mode near 1550 nm with a linewidth of 0.22 pm. This is a tunable light source with 8 nm wavelength tuning range. A proof-of-concept laser wavelength stabilization technique has also been demonstrated. Using a simple feedback loop, we achieved mode-hop-free operation in a packaged external-cavity hybrid laser as bias current was varied by 60mA.

Microring-based multi-chip WDM photonic module.

We report on a packaged prototype of a WDM photonic transceiver. It is an all-solid state hybrid assembly based on 130nm SOI photonic circuitry integrated with a 40nm CMOS VLSI driver. Our prototype supports eight tunable WDM channels operating at 10Gb/s, each capable of both transmitting and receiving data on the same chip. We discuss two options to close the link using the optical fiber or a waveguide bridge chip. We provide integration details and supporting link measurement data to describe packaged photonic module and its power efficient functionality with its on-chip power per channel averaging 1.3pJ/bit, excluding off-chip laser electrical power.

An all-solid-state, WDM silicon photonic digital link for chip-to-chip communications.

We describe a multiwavelength hybrid-integrated solid-state link on a 3 µm silicon-on-insulator (SOI) nanophotonic platform. The link spans three chips and employs germanium-silicon electroabsorption waveguide modulators, silicon transport waveguides, echelle gratings for multiplexing and demultiplexing, and pure germanium waveguide photo-detectors. The 8λ WDM Tx and Rx components are interconnected via a routing "bridge" chip using edge-coupled optical proximity communication. The packaged, retimed digital WDM link is demonstrated at 10 Gb/s and 10(-12) BER, with three wavelength channels consuming an on-chip power below 1.5 pJ/bit, excluding the external laser power.

Discrete Vernier tuning in terahertz quantum cascade lasers using coupled cavities.

Discrete Vernier frequency tuning of terahertz quantum cascade lasers is demonstrated using a device comprising a two-section coupled-cavity. The two sections are separated by a narrow air gap, which is milled after device packaging using a focused ion beam. One section of the device (the lasing section) is electrically biased above threshold using a short current pulse, while the other section (the tuning section) is biased below threshold with a wider current pulse to achieve controlled localized electrical heating. The resulting thermally-induced shift in the longitudinal cavity modes of the tuning section is engineered to produce either a controllable blue shift or red shift of the emission frequency. This discrete Vernier frequency tuning far exceeds the tuning achievable from standard ridge lasers, and does not lead to any corresponding change in emitted power. Discrete tuning was observed over bandwidths of 50 and 85 GHz in a pair of devices, each using different design schemes. Interchanging the lasing and tuning sections of the same devices yielded red shifts of 20 and 30 GHz, respectively.

High power and widely tunable Si hybrid external-cavity laser for power efficient Si photonics WDM links.

A highly efficient silicon (Si) hybrid external cavity laser with a wavelength tunable ring reflector is fabricated on a complementary metal-oxide semiconductor (CMOS)-compatible Si-on-insulator (SOI) platform and experimental results with high output power are demonstrated. A III-V semiconductor gain chip is edge-coupled into a SOI cavity chip through a SiN(x) spot size converter and Si grating couplers are incorporated to enable wafer-scale characterization. The laser output power reaches 20 mW and the highest wall-plug efficiency of 7.8% is measured at 17.3 mW in un-cooled condition. The laser wavelength tuning ranges are 8 nm for the single ring reflector cavity and 35 nm for the vernier ring reflector cavity, respectively. The Si hybrid laser is a promising light source for energy-efficient Si CMOS photonic links.

A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control.

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

Terahertz microscopy using laser feedback interferometry based on a generalised phase-stepping algorithm.

In this paper we report an improved method of coherent sensing through the use of a generalized phase-stepping algorithm to extract magnitude and phase information from interferometric fringes acquired by laser feedback interferometry (LFI). Our approach allows for significantly reduced optical sampling and acquisition times whilst also avoiding the need for fitting to complex models of lasers under optical feedback in post-processing. We investigate theoretically the applicability of this method under different levels of optical feedback, different laser parameters, and for different sampling conditions. We furthermore validate its use experimentally for LFI-based sensing using a terahertz (THz)-frequency laser in both far-field and near-field sensing configurations. Finally we demonstrate our approach for two-dimensional nanoscale imaging of the out-of-plane field supported by individual micro-resonators at THz frequencies. Our results show that fully coherent sensing can be achieved reliably with as little as 4 sampling points per imaging pixel, opening up opportunities for fast coherent sensing not only at THz frequencies but across the visible and infra-red spectrum.

Effect of molecular size and particle shape on the terahertz absorption of a homologous series of tetraalkylammonium salts.

The absorption coefficient and refractive index have been measured for a homologous series of tetraalkylammonium bromides over the frequency range 0.3-5.5 THz. Spectral features are found to shift to lower frequencies as the molecular mass is increased, as expected. However, to understand the detailed structure of the observed spectral features, density functional perturbation theory calculations have been performed on the first four crystalline compounds in the series. From these calculations, we find that each spectrum is dominated by three translatory modes involving asymmetric motion of the ammonium cation and bromine counterion, although the overall number of active modes increases with increasing molecular size. The experimentally observed absorption is not completely described by the infrared active phonon modes alone. We show that it is also necessary to include the coupling of the phonon modes with the macroscopic field generated by the collective displacement of the vibrating ions, and we have applied an effective medium theory, which accounts for particle shape to allow for this effect in the calculation of the terahertz spectra.

Vertical-coupled high-efficiency tunable III-V- CMOS SOI hybrid external-cavity laser.

We demonstrate a hybrid III-V/SOI laser by vertically coupling a III-V RSOA chip with a SOI-CMOS chip containing a tunable wavelength selective reflector. We report a waveguide-coupled wall-plug-efficiency of 5.5% and output power of 10 mW. A silicon resistor-based microheater was integrated to thermally tune a ring resonator for precise lasing wavelength control. A high tuning efficiency of 2.2 nm/mW over a range of 18 nm was achieved by locally removing the SOI handler substrate. C-band single mode lasing was confirmed with a side mode suppression ratio of 35 dB. This grating coupler based vertical integration approach can be scaled up in two dimensions for efficient multi-wavelength sources in silicon photonics.

Enhanced optical bistability from self-heating due to free carrier absorption in substrate removed silicon ring modulators.

We show enhanced optical bistability induced by free carrier absorption from junction doping in substrate-removed silicon ring modulators. Such linear thermal effects dominate the loss in high-speed depletion silicon ring modulators. Optical bistability was observed with about 100 µW of input optical power. We further show that such thermal interactions causes data-dependent ring resonance shifts, and consequently severely degrade the data modulation quality at low speeds. The frequency response of this effect was measured to be about 100~200 kHz.

Ultralow-loss, high-density SOI optical waveguide routing for macrochip interconnects.

We report optical waveguides up to one meter long with 0.026 dB/cm loss fabricated in a 300nm thick SOI CMOS process. Combined with tight bends and compact interlayer grating couplers, we demonstrate a complete toolbox for ultralow-loss, high-density waveguide routing for macrochip interconnects.

Improving CMOS-compatible Germanium photodetectors.

We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 µm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

A systematic review of economic evaluations of preoperative smoking cessation for preventing surgical complications.

BACKGROUND: Whilst there is a substantial body of evidence on the costs and benefits of smoking cessation generally, the benefits of routinely providing smoking cessation for surgical populations are less well known. This review summarises the evidence on the cost-effectiveness of preoperative smoking cessation to prevent surgical complications. MATERIALS AND METHODS: A search of the Cochrane, Econlit, EMBASE, Health Technology Assessment, Medline Complete and Scopus databases was conducted from inception until June 23, 2021. Peer-reviewed, English-language articles describing economic evaluations of preoperative smoking cessation interventions to prevent surgical complications were included. Search results were independently screened for potentially eligible studies. Study characteristics, economic evaluation methods and cost-effectiveness results were extracted by one reviewer and details checked by a second. Two authors independently assessed reporting and methodological quality using the Consolidated Health Economic Evaluation Reporting Standards statement (CHEERS) and the Quality of Health Economic Studies Instrument checklist (QHES) respectively. RESULTS: After removing duplicates, twenty full text articles were screened from 1423 database records, resulting in six included economic evaluations. Studies from the United States (n = 4), France (n = 1) and Spain (n = 1) were reported between 2009 and 2020. Four evaluations were conducted from a payer perspective. Two-thirds of evaluations were well-conducted (mean score 83) and well-reported (on average, 86% items reported). All studies concluded preoperative smoking cessation is cost-effective for preventing surgical complications; results ranged from cost saving to €53,131 per quality adjusted life year gained. CONCLUSIONS: Preoperative smoking cessation is cost-effective for preventing surgical complications from a payer or provider perspective when compared to standard care. There is no evidence from outside the United States and Europe to inform healthcare providers, funders and policy-makers in other jurisdictions and more information is needed to clarify the optimal point of implementation to maximise cost-effectiveness of preoperative smoking cessation intervention. SYSTEMATIC REVIEW REGISTRATION NUMBER: PROSPERO 2021 CRD42021257740. RESEARCH REGISTRY REGISTRATION NUMBER: reviewregistry1369.

25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning.

We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130 nm SOI CMOS process, with 7.5 µm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25 Gb/s modulation and an extinction ratio >5 dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19 nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7 fJ/bit. The whole device fits in a compact 400 µm2 footprint.