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1.
Phys Chem Chem Phys ; 19(16): 10406-10412, 2017 Apr 19.
Article in English | MEDLINE | ID: mdl-28379226

ABSTRACT

Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS2 as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.

2.
Phys Rev Lett ; 113(21): 217002, 2014 Nov 21.
Article in English | MEDLINE | ID: mdl-25479516

ABSTRACT

Clusters of interacting two-level-systems, likely due to Farbe+(F(+)) centers at the metal-insulator interface, are shown to self-consistently lead to 1/f(α) magnetization noise [with α(T)≲1] in SQUIDs. Model calculations, based on a new method of obtaining correlation functions, explains various puzzling experimental features. It is shown why the inductance noise is inherently temperature dependent while the flux noise is not, despite the same underlying microscopics. Magnetic ordering in these systems, established by three-point correlation functions, explains the observed flux-inductance-noise cross correlations. Since long-range ferromagnetic interactions are shown to lead to a more weakly temperature dependent flux noise when compared to short-range interactions, the time reversal symmetry of the clusters is also not likely broken by the same mechanism which mediates surface ferromagnetism in nanoparticles and thin films of the same insulator materials.

3.
Phys Rev Lett ; 112(10): 106402, 2014 Mar 14.
Article in English | MEDLINE | ID: mdl-24679311

ABSTRACT

We show that resonant coupling and entanglement between a mechanical resonator and Majorana bound states can be achieved via spin currents in a 1D quantum wire with strong spin-orbit interactions. The bound states induced by vibrating and stationary magnets can hybridize, thus resulting in spin-current induced 4π-periodic torques, as a function of the relative field angle, acting on the resonator. We study the feasibility of detecting and manipulating Majorana bound states with the use of magnetic resonance force microscopy techniques.

4.
Phys Rev Lett ; 110(7): 070503, 2013 Feb 15.
Article in English | MEDLINE | ID: mdl-25166358

ABSTRACT

We construct a universal set of high fidelity quantum gates to be used on a sparse bipartite lattice with always-on Ising couplings. The gates are based on dynamical decoupling sequences using shaped pulses, they protect against low-frequency phase noise, and can be run in parallel on non-neighboring qubits. This makes them suitable for implementing quantum error correction with low-density parity check codes like the surface codes and their finite-rate generalizations. We illustrate the construction by simulating the quantum Zeno effect with the [[4, 2, 2]] toric code on a spin chain.

5.
J Phys Condens Matter ; 26(4): 045801, 2014 Jan 29.
Article in English | MEDLINE | ID: mdl-24592487

ABSTRACT

Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal diamond) phase using a transferable model empirical pseudopotential method with spin­orbit interactions. We calculate their band structures and extract various relevant parameters. Differences between the cubic and hexagonal phases are highlighted by comparing their densities of states. While diamond and Si remain indirect gap semiconductors in the lonsdaleite phase, Ge transforms into a direct gap semiconductor with a much smaller bandgap. We also calculate complex dielectric functions for different optical polarizations and find strong optical anisotropy. We further provide expansion parameters for the dielectric functions in terms of Lorentz oscillators.

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