High precision of sign language recognition based on In2O3transistors gated by AlLiO solid electrolyte.

In recent years, the synaptic properties of transistors have been extensively studied. Compared with liquid or organic material-based transistors, inorganic solid electrolyte-gated transistors have the advantage of better chemical stability. This study uses a simple, low-cost solution technology to prepare In2O3transistors gated by AlLiO solid electrolyte. The electrochemical performance of the device is achieved by forming a double electric layer and electrochemical doping, which can mimic basic functions of biological synapses, such as excitatory postsynaptic current, paired-pulse promotion, and spiking time-dependent plasticity. Furthermore, complex synaptic behaviors such as Pavlovian classical conditioning is successfully emulated. With a 95% identification accuracy, an artificial neural network based on transistors is built to recognize sign language and enable sign language interpretation. Additionally, the handwriting digit's identification accuracy is 94%. Even with various levels of Gaussian noise, the recognition rate is still above 84%. The above findings demonstrate the potential of In2O3/AlLiO TFT in shaping the next generation of artificial intelligence.

High-kerbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.

In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er2O3nanofilm is investigated. To demonstrate the applicability of the Er2O3film, the indium oxide (In2O3) thin film transistor (TFT)-based amorphous Er2O3dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er2O3nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.

Wavelength tunable polarizer based on layered black phosphorus on Si/SiO2 substrate.

We report on both the theoretical and experimental design of a black phosphorus (BP)-based reflective linear polarizer on Si/SiO2 substrate in visible range using the Fabry-Perot cavities method. Thanks to the optical anisotropy of BP, polarization wavelength regulation and a high extinction ratio are achievable via optimizing the thickness of BP. Using azimuth-dependent reflectance difference microscopy, we directly measured a huge optical anisotropy of 1.58, corresponding to an extinction ratio of ∼9 dB, from a 96 nm BP on a silicon substrate capped by 260 nm thermally oxidized silicon at a wavelength of 690 nm for the first time, to the best of our knowledge. Our results not only provide a new route to designing nanoscale polarizers based on anisotropic two-dimensional (2D) materials, promoting the application of 2D materials in integrated optoelectronics and system-on-chip, but also suggest a modulation technique for optical anisotropy by integrating the BP film with cavity structures.

Flexible gas sensor based on graphene/ethyl cellulose nanocomposite with ultra-low strain response for volatile organic compounds rapid detection.

Minimizing the strain-induced undesirable effects is one of the major efforts to be made for flexible electronics. This work demonstrates a highly sensitive flexible gas sensor with ultra-low strain response, which is potentially suitable for wearable electronics applications. The gas sensing material is a free-standing and flexible thin film made of graphene/ethyl cellulose (EC) nanocomposite, which is then integrated with flexible substrate of polyethylene terephthalate. The sensor exhibits relative resistance change within 0.3% at a minimum bending radius of 3.18 mm and 0.2% at the bending radius of 5 mm after 400 bending cycles. The limited strain response attributes to several applied strategies, including using EC with high Young's modulus as the matrix material, maintaining high graphene concentration and adopting suspended device structure. In contrast to the almost negligible strain sensitivity, the sensor presents large and rapid responses toward volatile organic compounds (VOCs) at room temperature. Specifically, the sensor resistance rapidly increases upon the exposure to VOCs with detection limits ranging from 37 to 167 ppm. A preliminary demo of wearable gas sensing capability is also implemented by wearing the sensor on human hand, which successfully detects several VOCs, instead of normal hand gestures.

Dual Interactive Mode Human-Machine Interfaces Based on Triboelectric Nanogenerator and IGZO/In2O3 Heterojunction Synaptic Transistor.

Imitating human neural networks via bio-inspired electronics advances human-machine interfaces (HMI), overcoming von Neumann limitations and enabling efficient, low-energy data processing in the big data era. However, single-contact mode HMIs have inherent limitations in terms of their capabilities and performances, such as constrained adaptability to dynamic environments, and reduced cognitive processing capabilities. Here, a dual-interactive-mode HMI system based on a triboelectric nanogenerator (TENG) and heterojunction synaptic transistor (HJST) is proposed for both contact and non-contact applications. The TENG incorporates a poly-methyl meth-acrylate (PMMA)-NiCo2S4/S film, in which the NiCo2S4/S composite traps and blocks electrons to optimize charge generation and storage. The heterojunction structure, mitigates the Debye screening effect, thereby improving transistor characteristics and reliability. The integrated TENG-HJST system exhibits synaptic functions, including excitatory/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation/depression (PPF/PPD), and synaptic plasticity, enabling emulation of neural behavior and advanced information processing. Moreover, neural morphology manipulation is demonstrated in practical tasks, such as controlling international chess games. By integrating the TENG-HJST device with a robotic hand, conscious artificial responses are generated, enhancing event accuracy. This breakthrough in dual-interactive-mode interfacing holds promise for HMI systems and neural prostheses.

Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfaces.

Designing low-power and flexible artificial neural devices with artificial neural networks is a promising avenue for creating brain-computer interfaces (BCIs). Herein, we report the development of flexible In-Ga-Zn-N-O synaptic transistors (FISTs) that can simulate essential and advanced biological neural functions. These FISTs are optimized to achieve ultra-low power consumption under a super-low or even zero channel bias, making them suitable for wearable BCI applications. The effective tunability of synaptic behaviors promotes the realization of associative and non-associative learning, facilitating Covid-19 chest CT edge detection. Importantly, FISTs exhibit high tolerance to long-term exposure under an ambient environment and bending deformation, indicating their suitability for wearable BCI systems. We demonstrate that an array of FISTs can classify vision-evoked EEG signals with up to ∼87.9% and 94.8% recognition accuracy for EMNIST-Digits and MindBigdata, respectively. Thus, FISTs have enormous potential to significantly impact the development of various BCI techniques.

Interfacial charge-transfer enhances the dual-function of the porous NiCo2S4@SiO2 heterojunction for high-performance Li-S batteries.

Porous NiCo2S4@SiO2 is employed as the sulfur host. The negatively charged SiO2 can increase the charge density and conductivity of NiCo2S4 and accelerate the conversion of sulfur. The charge transfer effect would in turn reduce the electrostatic repulsion between SiO2 and negatively charged polysulfide, thereby enhancing the adsorption of polysulfides.

Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect.

van der Waals layered heterojunctions have a variety of band offsets that open up possibilities for a wide range of novel and multifunctional devices. However, due to their poor pristine carrier concentrations and limited band modulation methods, multifunctional p-n heterojunctions are very difficult to achieve. In this report, we developed a highly effective N2O plasma process to treat MoTe2/MoS2 heterojunctions. This allowed us to adjust the hole and electron concentrations in the two materials independently and simultaneously. More importantly, for the first time, we were able to create opposite doping on the two sides of the junction through a single-step treatment. With a very wide doping range from pristine to degenerate levels, a MoTe2/MoS2 heterojunction can be modulated to behave as a forward rectifying diode with enhanced rectifying ratio and as a tunneling transistor with negative differential resistance at room temperature. The new approach provides an effective and generic doping scheme for heterojunctions to construct versatile and multifunctional electronic devices.

CB Nanoparticles Optimized 3D Wearable Graphene Multifunctional Piezoresistive Sensor Framed by Loofah Sponge.

Three-dimensional (3D) wearable piezoresistive sensors with excellent performance are urgently needed in many emerging fields. Herein, a hybrid piezoresistive sensor with 3D structure, which is framed by loofah sponge and coated with reduced graphene oxide modified with carbon black nanoparticles (rGO-CB@LS), was obtained via a facile solvothermal method. The ingenious use of loofah sponge (LS) provides a 3D highly ordered structure with excellent flexibility for the hybrid sensor, which assists the sensor free from the dependence on an organic substrate and eliminates the pollution to the environment. While the addition of carbon black (CB) nanoparticles can reduce the contact resistance between rGO sheets, improve the conductivity and sensitivity effectively, and shorten the response/recovery time of the sensor. An ultralight piezoresistive sensor, which is low cost and environmentally friendly, was obtained under the synergy of LS and rGO-CB, accompanied by high sensitivity and good stability. This novel sensor also exhibits excellent performance in detecting tiny and big human activities, demonstrating its great potential for a new generation of 3D wearable sensors.

Ambipolar and n/p-type conduction enhancement of two-dimensional materials by surface charge transfer doping.

The controllable and wide-range modulation of the carrier type and mobility in atomically thin two-dimensional (2D) materials is one of the most critical issues to be addressed before 2D materials can be practically used for future electronic and optoelectronic devices. In this work, we propose using a novel surface charge transfer mechanism to accomplish the controllable and wide-range modulation of the carrier type and mobility in 2D materials. Our methodology uses a solution of triphenylboron (TPB) to physically coat 2D materials; the TPB molecule contains positive and negative charge centers that are spatially separable when induced by an electrical field. Consequently, the TPB can transfer either positive or negative charges to 2D materials depending on the direction of the applied electrical field and thus enhance the ambipolar behavior of the 2D-material FET. This method is so versatile that seven types of 2D materials including graphene, black phosphorus and five transition metal dichalcogenides (TMDCs) can be modulated to strong ambipolar behavior with significantly increased conduction. In addition, selectively suppressing or enhancing the negative charge center enables solely p-type and n-type doping. We also accomplish the precise tuning of carrier mobility in TMDCs from ambipolar to p-type by coating a mixture of TPB/BCF in certain concentration ratios.

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Layered black phosphorus (BP) has been expected to be a promising material for future electronic and optoelectronic applications since its discovery. However, the difficulty in mass fabricating layered air-stable BP severely obstructs its potential industry applications. Here, we report a new BP chemical modification method to implement all-solution-based mass production of layered air-stable BP. This method uses the combination of two electron-deficient reagents 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor ([Ph3C]BF4) to accomplish thinning and/or passivation of BP in organic solvent. The field-effect transistor and photodetection devices constructed from the chemically modified BP flakes exhibit enhanced performances with environmental stability up to 4 months. A proof-of-concept BP thin-film transistor fabricated through the all-solution-based exfoliation and modification displays an air-stable and a typical p-type transistor behavior. This all-solution-based method improves the prospects of BP for industry applications.

Implementing Lateral MoSe2 P-N Homojunction by Efficient Carrier-Type Modulation.

High-performance p-n junctions based on atomically thin two-dimensional (2D) materials are the fundamental building blocks for many nanoscale functional devices that are ideal for future electronic and optoelectronic applications. The lateral p-n homojunctions with conveniently tunable band offset outperform vertically stacked ones, however, the realization of lateral p-n homojunctions usually require efficient carrier-type modulation in a single 2D material flake, which remains a tech challenge. In this work, we have realized effective carrier-type modulation in a single MoSe2 flake, and thus, a lateral MoSe2 p-n homojunction is achieved by sequential treatment of air rapid thermal annealing and triphenylphosphine (PPh3) solution coating. The rapid thermal annealing modulates MoSe2 flakes from naturally n-type doping to degenerated p-type doping and improves the hole mobility of the MoSe2 field effect transistors from 0.2 to 71.5 cm2·V-1·s-1. Meanwhile, the n-doping of MoSe2 is increased by drop-coating PPh3 solution on the MoSe2 surface with increased electron mobility from 78.6 to 412.8 cm2·V-1·s-1. The as-fabricated lateral MoSe2 p-n homojunction presents a high rectification ratio of 104, an ideality factor of 1.2, and enhanced photoresponse of 1.3 A·W-1 to visible light. This efficient carrier-type modulation within a single MoSe2 flake has potential for use in various functional devices.

Ultraviolet Light-Induced Persistent and Degenerated Doping in MoS2 for Potential Photocontrollable Electronics Applications.

Efficient modulation of carrier concentration is fundamentally important for tailoring the electronic and photoelectronic properties of semiconducting materials. Photoinduced doping is potentially a promising way to realize such a goal for atomically thin nanomaterials in a rapid and defect-free manner. However, the wide applications of photoinduced doping in nanomaterials are severely constrained by the low doping concentration and poor stability that can be reached. Here, we propose a novel photoinduced doping mechanism based on the external photoelectric effect of metal coating on nanomaterials to significantly enhance the achievable doping concentration and stability. This approach is preliminarily demonstrated by an MX2 (M is Mo or Re; X is S or Se) nanoflake modified through a simple process of sequentially depositing and annealing an Au layer on the surface of the flake. Under ultraviolet (UV) light illumination, the modified MX2 achieves degenerated n-type doping density of 1014 cm-2 rapidly according to the experimentally observed >104 times increment in the channel current. The doping level persists after the removal of UV illumination with a nonobservable decrease over 1 day in vacuum (less than 23% over 7 days under an ambient environment). This photoinduced doping approach may contribute a major leap to the development of photocontrollable nanoelectronics.

Solution-Based Property Tuning of Black Phosphorus.

The air instability of black phosphorus (BP) severely hinders the development of its electronic and optoelectronic applications. Although a lot of effort has been made to passivate it against degradation in ambient conditions, approaches to further manipulate the properties of passivated BP are still very limited. Herein, we report a simple and low-cost chemical method that can achieve BP passivation and property tailoring simultaneously. The method is conducted by immersing a BP sample in the solution containing both 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor in a mixture of water and acetone (v/v = 1:1). After the treatment, the BP sample is functionalized with TEMPO, which not only efficiently passivates BP but also p-dopes BP to a degenerated density level of 1013 cm-2. The performance of the BP field effect transistor is improved after functionalization with a high Ion/ Ioff ratio of 106 and carrier mobility of 881.5 cm2/(V·s). The functionalization-induced doping also significantly reduces the contact resistance between BP and the Cr/Au electrode to 0.97 kΩ·µm. Additionally, we observe a great reduction of BP electrical and optical anisotropies after functionalization. This chemical functionalization method provides a viable route to simultaneously passivate and tune the properties of BP.

Resolving the optical anisotropy of low-symmetry 2D materials.

Optical anisotropy is one of the most fundamental physical characteristics of emerging low-symmetry two-dimensional (2D) materials. It provides abundant structural information and is crucial for creating diverse nanoscale devices. Here, we have proposed an azimuth-resolved microscopic approach to directly resolve the normalized optical difference along two orthogonal directions at normal incidence. The differential principle ensures that the approach is only sensitive to anisotropic samples and immune to isotropic materials. We studied the optical anisotropy of bare and encapsulated black phosphorus (BP) and unveiled the interference effect on optical anisotropy, which is critical for practical applications in optical and optoelectronic devices. A multi-phase model based on the scattering matrix method was developed to account for the interference effect and then the crystallographic directions were unambiguously determined. Our result also suggests that the optical anisotropy is a probe to measure the thickness with monolayer resolution. Furthermore, the optical anisotropy of rhenium disulfide (ReS2), another class of anisotropic 2D materials, with a 1T distorted crystal structure, was investigated, which demonstrates that our approach is suitable for other anisotropic 2D materials. This technique is ideal for optical anisotropy characterization and will inspire future efforts in BP and related anisotropic 2D nanomaterials for engineering new conceptual nanodevices.

Oxygen Plasma-Treated Graphene Oxide Surface Functionalization for Sensitivity Enhancement of Thin-Film Piezoelectric Acoustic Gas Sensors.

In this work, we presented a thin-film piezoelectric acoustic gas sensor with enhanced sensitivity by a surface modification strategy of oxygen plasma treated graphene oxide (GO) functionalization. By exposing to ammonia vapor (NH3) of various concentrations at controlled temperature and humidity, the characteristics of the GO-coated acoustic sensor were investigated, that is, sensitivity, linearity, response, and recovery time. Oxygen plasma treatment of the GO-coated sensor further enhanced the sensitivity compared with the freshly prepared GO-coated sensor. The mechanism of oxygen plasma treatment effect on the GO-coated sensor was discussed based on characterizations of X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscope (SEM), and precise weighing of the acoustic sensor. It was found that the oxygen plasma treatment introduces numerous defects to GO flakes, which are uniformly distributed across the GO surface, providing more gas molecule binding sites.

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing.

Understanding and engineering the interface between metal and two-dimensional materials are of great importance to the research and development of nanoelectronics. In many cases the interface of metal and 2D materials can dominate the transport behavior of the devices. In this study, we focus on the metal contacts of MoTe2 (molybdenum ditelluride) FETs (field effect transistors) and demonstrate how to use post-annealing treatment to modulate their transport behaviors in a controlled manner. We have also carried out low temperature and transmission electron microscopy studies to understand the mechanisms behind the prominent effect of the annealing process. Changes in transport properties are presumably due to anti-site defects formed at the metal-MoTe2 interface under elevated temperature. The study provides more insights into MoTe2 field effect devices and suggests guidelines for future optimizations.

Silver-catalyzed regioselective [3+2] cycloaddition of arene-diazonium salts with 2,2,2-trifluorodiazoethane (CF3CHN2): a facile access to 2-aryl-5-trifluoromethyltetrazoles.

A silver-catalyzed regioselective [3+2] cycloaddition reaction of arenediazonium salts with 2,2,2-trifluorodiazoethane (CF3CHN2) is reported. Under mild conditions, a series of 2-aryl substituted 5-trifluoromethyltetrazoles were obtained in moderate to excellent yields with wide functional group compatibility. Furthermore, this cycloaddition reaction could also be performed in a one-pot diazotization/cycloaddition sequence from commercially available aniline derivatives.