Flashlight-size external cavity semiconductor laser with narrow-linewidth tunable output.

We describe the construction of a compact and relatively inexpensive external cavity to be used with III-V compound semiconductor injection lasers. The operation of a typical GaAs diode in the cavity and some of the limiting performance factors are discussed.

Low-threshold transversely excited NdP(5)O(14) laser.

The threshold and efficiency of a transversely excited, cw NdP(5)O(14) laser have been measured with 0.58-microm excitation from a dye laser and 0.8-microm excitation from a semiconductor laser. After fitting our data for the threshold as a function of wavelength near 0.58 microm, we have applied the calculations to the 0.80-microM Nd(3+) absorption band. With transverse excitation from high-radiance LED's or laser diodes, thresholds are calculated to be 4-8.5 mW at 0.80 microm, depending on pump bandwidth. Using an A1(x)Ga(1-x)As double-hetero-structure laser diode pump, we have obtained quasi-cw lasing in NdP(5)O(14), with thresholds ~7 mW and optical power conversion efficiency ~7%.