Synthesis, Characterization, and Thin-Film Transistor Response of Benzo[i]pentahelicene-3,6-dione.

Organic semiconductors hold the promise of simple, large area solution deposition, low thermal budgets as well as compatibility with flexible substrates, thus emerging as viable alternatives for cost-effective (opto)-electronic devices. In this study, we report the optimized synthesis and characterization of a helically shaped polycyclic aromatic compound, namely benzo[i]pentahelicene-3,6-dione, and explored its use in the fabrication of organic field effect transistors. In addition, we investigated its thermal, optical absorption, and electrochemical properties. Finally, the single crystal X-ray characterization is reported.

High Throughput Bar-Coating Processed Organic-Inorganic Hybrid Multi-Layers for Gas Barrier Thin-Films.

Herein, we demonstrate the preparation of a scalable bar-coated nanocomposite organic-inorganic hybrid film and developed robust barrier films for general purpose packaging. Using combinatory printing of polymers and nanocomposites by bar coating, a facile and effective barrier film fabrication method was developed. Based on a preliminary survey with several material combinations, a rationalized two-fold nanocomposite film was fabricated. The number of layers in the barrier film significantly modified oxygen barrier performance such that, for the 1 wt% ethylene vinyl alcohol (EVOH) intercalated film, the oxygen transmission rate (OTR) of the 5-layer sample was reduced to 31.69% of the OTR of the 3-layer sample (112.8 vs. 35.75 cc/(m² · day)). In addition, fine tuning the amount of EVOH polymer enabled further improvement of oxygen barrier performance. Intercalation of 2 wt% EVOH resulted an OTR improvement from 35.75 in the 1 wt% sample to 11.90 cc/(m² ·day), which is a 4.25-fold enhancement. Overall barrier characteristics proved that our approach could be used for large-area deposited, oxygen resistant, general purpose packaging applications.

Solution-Processable Diketopyrrolopyrrole Derivatives as Organic Semiconductors for Organic Thin-Film Transistors.

Solution-processable diketopyrrolopyrrole derivatives having acetylene, 2,5-bis(2-ethylhexyl)-3-(5-(phenylethynyl)thiophen-2-yl)-6-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione (3), 2,5-bis (2-ethylhexyl)-3-(thiophen-2-yl)-6-(5-(thiophen-2-ylethynyl)thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c] pyrrole-1,4-dione (4), and 6,6'-((thiophene-2,5-diylbis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl)) bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (5) were synthesized and characterized as organic semiconductors for organic thin-film transistors (OTFTs). For the fabrication of thin films based on solution processable compounds, drop-casting (DC) and solution-shearing (SS) were employed. Thin films of compound 5 exhibited p-channel characteristics with carrier mobility as high as 5.7 × 10-4 cm2/Vs and a current on/off ratio of 104-106 for top-contact/bottom-gate OTFT devices.

A Solution-Processable Liquid-Crystalline Semiconductor for Low-Temperature-Annealed Air-Stable N-Channel Field-Effect Transistors.

A new solution-processable and air-stable liquid-crystalline n-channel organic semiconductor (2,2'-(2,8-bis(5-(2-octyldodecyl)thiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile, α,ω-2OD-TIFDMT) with donor-acceptor-donor (D-A-D) π conjugation has been designed, synthesized, and fully characterized. The new semiconductor exhibits a low LUMO energy (-4.19 eV) and a narrow optical bandgap (1.35 eV). The typical pseudo-focal-conic fan-shaped texture of a hexagonal columnar liquid-crystalline (LC) phase was observed over a wide temperature range. The spin-coated semiconductor thin films show the formation of large (≈0.5-1 µm) and highly crystalline platelike grains with edge-on molecular orientations. Low-temperature-annealed (50 °C) top-contact/bottom-gate OFETs have provided good electron mobility values as high as 0.11 cm2 (V s)-1 and high Ion /Ioff ratios of 107 to 108 with excellent ambient stability. This indicates an enhancement of two orders of magnitude (100×) when compared with the ß-substituted parent semiconductor, ß-DD-TIFDMT (2,2'-(2,8-bis(3-dodecylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile). The current rational alkyl-chain engineering route offers great advantages for D-A-D π-core coplanarity in addition to maintaining good solubility in organic solvents, and leads to favorable optoelectronic/physicochemical characteristics. These remarkable findings demonstrate that α,ω-2OD-TIFDMT is a promising semiconductor material for the development of n-channel OFETs on flexible plastic substrates and LC-state annealing of the columnar liquid crystals can lower the electron mobility for transistor-type charge transport.

Synthesis and Characterization of Benzothiadiazole Derivatives as Organic Semiconductors for Organic Thin-Film Transistors.

New benzothiadiazole derivatives end-functionalized with carbazole and a-carboline, 4,7-di(9H-carbazol-9-yl)benzo[c][1,2,5]thiadiazole (1) and 4-(9H-carbazol-9-yl)-7-(9H-pyrido[2,3-bindol-9-yl) benzo[c][1,2,5]thiadiazole (2) were synthesized and characterized as organic semiconductors for organic thin-film transistors (OTFTs). Thermal, optical, and electrochemical properties of the corresoponding compounds were characterized. Thin films of compound 1 exhibited p-channel characteristics with carrier mobility as high as 10⁻4 cm²/Vs and a current on/off ratio of 105 for top-contact/bottom-gate OTFT devices.

Enhanced performance of benzothieno[3,2-b]thiophene (BTT)-based bottom-contact thin-film transistors.

Three new benzothieno[3,2-b]thiophene (BTT; 1) derivatives, which were end-functionalized with phenyl (BTT-P; 2), benzothiophenyl (BTT-BT; 3), and benzothieno[3,2-b]thiophenyl groups (BBTT; 4; dimer of 1), were synthesized and characterized in organic thin-film transistors (OTFTs). A new and improved synthetic method for BTTs was developed, which enabled the efficient realization of new BTT-based semiconductors. The crystal structure of BBTT was determined by single-crystal X-ray diffraction. Within this family, BBTT, which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p-channel characteristic, with a carrier mobility as high as 0.22 cm(2) V(-1) s(-1) and a current on/off ratio of 1×10(7) , as well as good ambient stability for bottom-contact/bottom-gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.

Enhanced performance of solution-processed TESPE-ADT thin-film transistors.

A solution-processed anthradithiophene derivative, 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ~0.12 cm(2) V(-1) s(-1) are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

Gel Polymer Electrolytes for Lithium-Ion Batteries Enabled by Photo Crosslinked Polymer Network.

We demonstrate a gel polymer electrolyte (GPE) featuring a crosslinked polymer matrix formed by poly(ethylene glycol) diacrylate (PEGDA) and dipentaerythritol hexaacrylate (DPHA) using the radical photo initiator via ultraviolet (UV) photopolymerization for lithium-ion batteries. The two monomers with acrylate functional groups undergo chemical crosslinking, resulting in a three-dimensional structure capable of absorbing liquid electrolytes to form a gel. The GPE system was strategically designed by varying the ratios between the main polymer backbone (PEGDA) and the crosslinker (DPHA) to achieve an optimal gel polymer electrolyte network. The resulting GPE exhibited enhanced thermal stability compared to conventional liquid electrolytes (LE) and demonstrated high ionic conductivity (1.40 mS/cm) with a high lithium transference number of 0.65. Moreover, the obtained GPE displayed exceptional cycle performance, maintaining a higher capacity retention (85.2%) comparable to the cell with LE (79.3%) after 200 cycles.

In Situ Radiation Hardness Study of Amorphous Zn-In-Sn-O Thin-Film Transistors with Structural Plasticity and Defect Tolerance.

Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In-Ga-Zn-O, Ga-Sn-O, Ga-In-Sn-O, and Ga-Sn-Zn-O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiation-resistant ZITO channel, a thin dielectric (50 nm SiO2), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm2/V s and aΔVth of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

Replacing -CH2CH2- with -CONH- does not significantly change rates of charge transport through Ag(TS)-SAM//Ga2O3/EGaIn junctions.

This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a -CH(2)CH(2)- group with a -CONH- group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure Ag(TS)-S(CH(2))(m)X(CH(2))(n)H//Ga(2)O(3)/EGaIn (TS = template stripped, X = -CH(2)CH(2)- or -CONH-, and EGaIn = eutectic alloy of gallium and indium). Incorporation of the amide group does, however, increase the yields of working (non-shorting) junctions (when compared to n-alkanethiolates of the same length). These results suggest that synthetic schemes that combine a thiol group on one end of a molecule with a group, R, to be tested, on the other (e.g., HS~CONH~R) using an amide-based coupling provide practical routes to molecules useful in studies of molecular electronics.

Development and Characterization of Solution-Processable Dithieno[3,2-b : 2',3'-d]thiophenes Derivatives with Various End-capped Groups for Organic Field-Effect Transistors.

In this paper, four organic materials based on dithieno[3,2-b : 2',3'-d]thiophene (DTT) core structure with end-capping groups (phenyl and thienyl) and linker (acetylenic and olefinic) between DTT-core and end-capping groups were synthesized and characterized as solution-processable organic semiconductors (OSCs) for organic field-effect transistors (OFETs). Thermal, optical, and electrochemical properties of the corresponding materials were determined. Next, all DTT-derivatives were coated by solution-shearing method, and the thin-film microstructures and morphologies were investigated. To investigate the electrical performance of four newly synthesized DTT-derivatives, bottom-gate/top-contact OFETs were fabricated and characterized in ambient condition. It was found that substitution of acetylenic for olefinic linkers between DTT-cores and end-capping groups enhanced device performance. Especially, the resulting OFETs based on the compound containing phenylacetylene exhibited the highest hole mobility of 0.15 cm2 /Vs and current on/off ratio of ∼106 , consistent with film morphology and texture showing long range interconnected crystalline grains and strong diffraction peaks.

Odd-even effects in charge transport across self-assembled monolayers.

This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag(TS)) surfaces support the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (∼1 nm) oxide layer. This oxide layer enables EGaIn to maintain a stable, conical shape (convenient for forming microcontacts to SAMs) while retaining the ability to deform and flow upon contacting a hard surface. Conical electrodes of EGaIn conform (at least partially) to SAMs and generate high yields of working junctions. Ga(2)O(3)/EGaIn top electrodes enable the collection of statistically significant numbers of data in convenient periods of time. The observed difference in charge transport between n-alkanethiols with odd and even numbers of methylenes--the "odd-even effect"--is statistically discernible using these junctions and demonstrates that this technique is sensitive to small differences in the structure and properties of the SAM. Alkanethiols with an even number of methylenes exhibit the expected exponential decrease in current density, J, with increasing chain length, as do alkanethiols with an odd number of methylenes. This trend disappears, however, when the two data sets are analyzed together: alkanethiols with an even number of methylenes typically show higher J than homologous alkanethiols with an odd number of methylenes. The precision of the present measurements and the statistical power of the present analysis are only sufficient to identify, with statistical confidence, the difference between an odd and even number of methylenes with respect to J, but not with respect to the tunneling decay constant, ß, or the pre-exponential factor, J(0). This paper includes a discussion of the possible origins of the odd-even effect but does not endorse a single explanation.

Solution-processable low-molecular weight extended arylacetylenes: versatile p-type semiconductors for field-effect transistors and bulk heterojunction solar cells.

We report the synthesis and characterization of a series of five extended arylacetylenes, 9,10-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-anthracene (A-P6t, 1), 9,10-bis-[(p-{[m,p-bis(hexyloxy) phenyl]ethynyl}phenyl)ethynyl]-anthracene (PA-P6t, 2), 4,7-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazole (BTZ-P6t, 5), 4,7-bis(5-{[m,p-bis(hexyloxy)phenyl]ethynyl}thien-2-yl)-2,1,3-benzothiadiazole (TBTZ-P6t, 6), and 7,7'-({[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazol-4,4'-ethynyl)-2,5-thiophene (BTZT-P6t, 7), and two arylvinylenes, 9,10-bis-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}-anthracene (A-P6d, 3), 9,10-bis-[(E)-(p-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}phenyl)vinyl]-anthracene (PA-P6d, 4). Trends in optical absorption spectra and electrochemical redox processes are first described. Next, the thin-film microstructures and morphologies of films deposited from solution under various conditions are investigated, and organic field-effect transistors (OFETs) and bulk heterojunction photovoltaic (OPV) cells fabricated. We find that substituting acetylenic for olefinic linkers on the molecular cores significantly enhances device performance. OFET measurements reveal that all seven of the semiconductors are FET-active and, depending on the backbone architecture, the arylacetylenes exhibit good p-type mobilities (mu up to approximately 0.1 cm(2) V(-1) s(-1)) when optimum film microstructural order is achieved. OPV cells using [6,6]-phenyl C(61)-butyric acid methyl ester (PCBM) as the electron acceptor exhibit power conversion efficiencies (PCEs) up to 1.3% under a simulated AM 1.5 solar irradiation of 100 mW/cm(2). These results demonstrate that arylacetylenes are promising hole-transport materials for p-channel OFETs and promising donors for organic solar cells applications. A direct correlation between OFET arylacetylene hole mobility and OPV performance is identified and analyzed.

Probing the surface glass transition temperature of polymer films via organic semiconductor growth mode, microstructure, and thin-film transistor response.

Organic semiconductor-based thin-film transistors (TFTs) have been extensively studied for organic electronics. In this study, we report on the influence of the polymer gate dielectric viscoelastic properties on overlying organic semiconductor film growth, film microstructure, and TFT response. From the knowledge that nanoscopically-confined thin polymer films exhibit glass-transition temperatures that deviate substantially from those of the corresponding bulk materials, we show here that pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymeric gate dielectrics at temperatures well-below their bulk glass transition temperatures [T(g)(b)] exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures [associated with a polymer "surface glass transition temperature," or T(g)(s)]. These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Our results demonstrate that TFT measurements represent a new and sensitive methodology to probe polymer surface viscoelastic properties.

One-pot [1+1+1] synthesis of dithieno[2,3-b:3',2'-d]thiophene (DTT) and their functionalized derivatives for organic thin-film transistors.

A facile one-pot [1+1+1] synthesis of dithieno[2,3-b:3',2'-d]thiophene (; ) has been achieved, enabling the efficient realization of a new DTT-based semiconductor series for organic thin-film transistors (OTFTs).

Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends.

Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6,13-bis(triisopropylsilylethynyl)pentacene and n-channel poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-2T); N2200) on polystyrene-brush as a polymer electret. Electret-based memory characteristics are significantly changed depending on the frontier molecular orbitals of the active semiconductors because the charge-trapping efficiency is mainly determined by the energy barrier to transfer electrons and holes from the active channel to the electret layer. A semiconductor mixture with an optimized blending ratio results in an efficient programming and erasing process. Thus, we obtained a remarkably high ratio of ON/OFF current (memory ratio) about 107 and a large amount of shifts in the threshold voltage (memory window) between the programmed and erased states of 55 V, while single-component N2200 showed only writing-once-read-many (WORM)-type memory. Especially, the programmed data can be stably retained more than 10 years with a sufficient memory ratio of 103. Furthermore, our semiconductor blend system leads to preferable vertical phase separation, which affords good reliability under a sequential memory operation condition as well as stability in ambient air. It is expected that our memory devices can be applied for versatile data storage in printed and flexible electronic applications.

BODIPY-Based Semiconducting Materials for Organic Bulk Heterojunction Photovoltaics and Thin-Film Transistors.

The rapid emergence of organic (opto)electronics as a promising alternative to conventional (opto)electronics has been achieved through the design and development of novel π-conjugated systems. Among various semiconducting structural platforms, 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) π-systems have recently attracted attention for use in organic thin-films transistors (OTFTs) and organic photovoltaics (OPVs). This Review article provides an overview of the developments in the past 10 years on the structural design and synthesis of BODIPY-based organic semiconductors and their application in OTFT/OPV devices. The findings summarized and discussed here include the most recent breakthroughs in BODIPYs with record-high charge carrier mobilities and power conversion efficiencies (PCEs). The most up-to-date design rationales and discussions providing a strong understanding of structure-property-function relationships in BODIPY-based semiconductors are presented. Thus, this review is expected to inspire new research for future materials developments/applications in this family of molecules.

A Solution-Processable meso-Phenyl-BODIPY-Based n-Channel Semiconductor with Enhanced Fluorescence Emission.

The molecular design, synthesis, and characterization of an acceptor-donor-acceptor (A-D-A) semiconductor BDY-Ph-2T-Ph-BDY comprising a central phenyl-bithiophene-phenyl π-donor and BODIPY π-acceptor end-units is reported. The semiconductor shows an optical band gap of 2.32 eV with a highly stabilized HOMO/LUMO (-5.74 eV/-3.42 eV). Single-crystal X-ray diffraction (XRD) reveals D-A dihedral angle of ca. 66° and strong intermolecular "C-H ⋅⋅⋅ π (3.31 Å)" interactions. Reduced π-donor strength, increased D-A dihedral angle, and restricted intramolecular D-A rotations allows for both good fluorescence efficiency (ΦF =0.30) and n-channel OFET transport (µe =0.005 cm2 /V ⋅ s; Ion /Ioff =104 -105 ). This indicates a much improved (6-fold) fluorescence quantum yield compared to the meso-thienyl BODIPY semiconductor BDY-4T-BDY. Photophysical studies reveal important transitions between locally excited (LE) and twisted intramolecular charge-transfer (TICT) states in solution and the solid state, which could be controlled by solvent polarity and nano-aggregation. This is the first report of such high emissive characteristics for a BODIPY-based n-channel semiconductor.

Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds.

We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to approximately 500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X 3Si-R-SiX 3 (R = -C 6H 12- and X = Cl, OAc, NMe 2, OMe, or R = -C 2H 4-O-C 2H 4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates. Dielectric films fabricated by blending X 3Si-R-SiX 3 with poly(4-vinyl)phenol (PVP) require very low-curing temperatures ( approximately 110 degrees C) and adhere tenaciously to a variety of FET gate contact materials such as n (+)-Si, ITO, and Al. The CPB dielectrics exhibit excellent insulating properties (leakage current densities of 10 (-7) approximately 10 (-8) A cm (-2) at 2.0 MV/cm) and tunable capacitance values (from 5 to approximately 350 nF cm (-2)). CPB film quality is correlated with the PVP-cross-linking reagent reactivity. OFETs are fabricated with both p- and n-type organic semiconductors using the CPB dielectrics function at low operating voltages. The morphology and microstructure of representative semiconductor films grown on the CPB dielectrics is also investigated and is correlated with OFET device performance.

Effect of methane-sugar interaction on the solubility of methane in an aqueous solution.

In this study, the effect of methane-sugar interaction on the solubility of methane in an aqueous solution at ambient pressure was investigated. Various sugars, such as fructose, glucose, sucrose, maltose, and raffinose, were used, and depending on the type and concentration of sugar, the methane solubility increased from 21.72mg/L (in pure water) to 24.86mg/L. Sugars with a low hydrogen-bonding number between the water and sugar molecules exhibited a large enhancement in methane solubility. The solute partitioning model and molecular dynamics simulations were employed to verify the results obtained for the experimental solubility of methane in aqueous sugar solutions.