Roadmap on quantum nanotechnologies.

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate.

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 µs.

Spectrum of the Nuclear Environment for GaAs Spin Qubits.

Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over 6 orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as 1/f^{2} for frequency f≳1 Hz. Increasing the applied magnetic field from 0.1 to 0.75 T suppresses electron-mediated spin diffusion, which decreases the spectral content in the 1/f^{2} region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime (≲16π pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime (≳32 π pulses), where longitudinal Overhauser fluctuations with a 1/f spectrum dominate.

Negative Spin Exchange in a Multielectron Quantum Dot.

We use a one-electron quantum dot as a spectroscopic probe to study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation numbers. We observe that the multielectron ground-state transitions from spin-1/2-like to singletlike to tripletlike as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of nontrivial multielectron spin exchange correlations.

Noise Suppression Using Symmetric Exchange Gates in Spin Qubits.

We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor of six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.

Real-time two-axis control of a spin qubit.

Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize the qubit performance. Powered by a field-programmable gate array (FPGA), the quantum control electronics estimates the Overhauser field gradient between the two electrons in real time, enabling controlled Overhauser-driven spin rotations and thus bypassing the need for micromagnets or nuclear polarization protocols. It also estimates the exchange interaction between the two electrons and adjusts their detuning, resulting in extended coherence of Hadamard rotations when correcting for fluctuations of both qubit axes. Our study highlights the role of feedback in enhancing the performance and stability of quantum devices affected by quasistatic noise.

Single-electron operations in a foundry-fabricated array of quantum dots.

Silicon quantum dots are attractive for the implementation of large spin-based quantum processors in part due to prospects of industrial foundry fabrication. However, the large effective mass associated with electrons in silicon traditionally limits single-electron operations to devices fabricated in customized academic clean rooms. Here, we demonstrate single-electron occupations in all four quantum dots of a 2 x 2 split-gate silicon device fabricated entirely by 300-mm-wafer foundry processes. By applying gate-voltage pulses while performing high-frequency reflectometry off one gate electrode, we perform single-electron operations within the array that demonstrate single-shot detection of electron tunneling and an overall adjustability of tunneling times by a global top gate electrode. Lastly, we use the two-dimensional aspect of the quantum dot array to exchange two electrons by spatial permutation, which may find applications in permutation-based quantum algorithms.

Fast spin exchange across a multielectron mediator.

Scalable quantum processors require tunable two-qubit gates that are fast, coherent and long-range. The Heisenberg exchange interaction offers fast and coherent couplings for spin qubits, but is intrinsically short-ranged. Here, we demonstrate that its range can be increased by employing a multielectron quantum dot as a mediator, while preserving speed and coherence of the resulting spin-spin coupling. We do this by placing a large quantum dot with 50-100 electrons between a pair of two-electron double quantum dots that can be operated and measured simultaneously. Two-spin correlations identify coherent spin-exchange processes across the multielectron quantum dot. We further show that different physical regimes of the mediated exchange interaction allow a reduced susceptibility to charge noise at sweet spots, as well as positive and negative coupling strengths up to several gigahertz. These properties make multielectron dots attractive as scalable, voltage-controlled coherent coupling elements.

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas.

The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies1 and interqubit coupling strengths2 to the gain of parametric amplifiers3 for quantum-limited readout. The inductance is either set by tailoring the metal oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices with local current-biased flux lines. JJs based on superconductor-semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant that employs locally gated nanowire superconductor-semiconductor JJs for qubit control4,5. Here we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show that 2DEG gatemons meet the requirements6 by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 µs, limited by dielectric loss in the 2DEG substrate.

Notch filtering the nuclear environment of a spin qubit.

Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low-frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High-frequency nuclear noise, recently studied via echo revivals, occurs in narrow-frequency bands related to differences in Larmor precession of the three isotopes 69Ga, 71Ga and 75As (refs 15,16,17). Here, we show that both low- and high-frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time (T2) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.

Hole spin relaxation in Ge-Si core-shell nanowire qubits.

Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge-Si core-shell nanowire. With fast gating, we measure T(1) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

Measurement of discrete energy-level spectra in individual chemically synthesized gold nanoparticles.

We form single-electron transistors from individual chemically synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy levels of individual gold nanoparticles that are, by virtue of chemical synthesis, well-defined in their composition, size and shape. We show that the nanoparticles are nonmagnetic and have spectra in good accord with random-matrix-theory predictions taking into account strong spin-orbit coupling.

Imaging electromigration during the formation of break junctions.

Using a scanning electron microscope, we make real-time movies of gold nanowires during the process of electromigration. We confirm the importance of using a small series resistance when employing electromigration to make controlled nanometer-scale gaps suitable for molecular-electronics studies. We are also able to estimate the effective temperature experienced by molecular adsorbates on the nanowire during the electromigration process.

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions.

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.