ABSTRACT
Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.
Subject(s)
Graphite/chemistry , Metal Nanoparticles/chemistry , Metal Nanoparticles/ultrastructure , Transition Elements/chemistry , Electric Conductivity , Electron Transport , Materials Testing , Particle SizeABSTRACT
We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements of monolayer and bilayer WSe_{2}. We measure a band gap of 2.21±0.08 eV in monolayer WSe_{2}, which is much larger than the energy of the photoluminescence peak, indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS, we map the energy versus momentum dispersion relations for monolayer and bilayer WSe_{2}. Further, by tracking allowed and forbidden scattering channels as a function of energy we infer the spin texture of both the conduction and valence bands. We observe a large spin-splitting of the valence band due to strong spin-orbit coupling, and additionally observe spin-valley-layer coupling in the conduction band of bilayer WSe_{2}.