ABSTRACT
The bipolar resistive switching behavior in a device based on an crystalline iron-based organic-inorganic, perovskite-like material of (CH3NH3)2FeCl4 (MAFC), was examined and studied. Both high and low resistance states appeared to have no obvious degradation during a measurement period of 600 s with 400 cycles in a Ag/MAFC/Cu device, which also exhibited good thermal stability over a wide temperature range of 290 to 340 K. The conductivity-state switching behavior was derived from the competition between the ionic current within the MAFC and the Faradaic current that originated from oxidative reactions at the Ag/MAFC/Cu interface. A model explaining the oxidative reaction process was established to describe the symmetric resistive switching behavior in the Ag/MAFC/Cu cell. With an applied bias voltage sweeping, the oxidative layers passivated and dissipated at the Ag/MAFC/Cu interface that resulted in the competition between the induced current and the ionic current, and thus caused a symmetric resistance change. On the basis of this interfacial effect, the MAFC crystals can be used as memristor elements in devices for write-read-erase-rewrite process.