Structures and Stabilities of Carbon Chain Clusters Influenced by Atomic Antimony.

The C-C bond lengths of the linear magnetic neutral CnSb, CnSb+ cations and CnSb- anions are within 1.255-1.336 Å, which is typical for cumulene structures with moderately strong double-bonds. In this report, we found that the adiabatic ionization energy (IE) of CnSb decreased with n. When comparing the IE~n relationship of CnSb with that of pure Cn, we found that the latter exhibited a stair-step pattern (n ≥ 6), but the IE~n relationship of CnSb chains took the shape of a flat curve. The IEs of CnSb were lower than those of corresponding pure carbon chains. Different from pure carbon chains, the adiabatic electron affinity of CnSb does not exhibit a parity effect. There is an even-odd alternation for the incremental binding energies of the open chain CnSb (for n = 1-16) and CnSb+ (n = 1-10, when n > 10, the incremental binding energies of odd (n) chain of CnSb+ are larger than adjacent clusters). The difference in the incremental binding energies between the even and odd chains of both CnSb and pure Cn diminishes with the increase in n. The incremental binding energies for CnSb- anions do not exhibit a parity effect. For carbon chain clusters, the most favorable binding site of atomic antimony is the terminal carbon of the carbon cluster because the terminal carbon with a large spin density bonds in an unsaturated way. The C-Sb bond is a double bond with Wiberg bond index (WBI) between 1.41 and 2.13, which is obviously stronger for a carbon chain cluster with odd-number carbon atoms. The WBI of all C-C bonds was determined to be between 1.63 and 2.01, indicating the cumulene character of the carbon chain. Generally, the alteration of WBI and, in particular, the carbon chain cluster is consistent with the bond length alteration. However, the shorter C-C distance did not indicate a larger WBI. Rather than relying on the empirical comparison of bond distance, the WBI is a meaningful quantitative indicator for predicting the bonding strength in the carbon chain.

A two-dimensional ErCu2 intermetallic compound on Cu(111) with moiré-pattern-modulated electronic structures.

A rare-earth compound on a metal may form a two-dimensional (2D) intermetallic compound whose properties can be further modulated by the underlying substrate periodicity and coupling. Here, we present a combinational and systematic investigation using scanning tunneling microscopy/spectroscopy (STM/STS) and density functional theory (DFT) calculations on erbium (Er) on Cu(111). Experimentally, an intriguing growth mode transition from a branched island to a fractal-like island has been observed depending on whether the deposition process of Er is interrupted for a certain duration: post-deposition effects, such as nucleation and island growth controlled by diffusion, play an essential role in altering the Er island edge and its activity. Upon annealing, the branched Er islands become strands of amorphous surface alloy; in contrast, the fractal-like islands (with additional Er atoms on top) give rise to a monolayer thick 2D ErCu2 intermetallic compound and display a moiré pattern. Theoretically, using DFT calculations, we found that the characteristic energy states, particularly the state in the unoccupied region around 582-663 meV, of the 2D ErCu2 intermetallic compound are position-dependent, consistent with STS measurements. The moiré pattern originating from the mismatch of the periodicities of the ErCu2 layer and the Cu(111) surface was identified to be responsible for the observed periodic modulation on the coupling interaction that affects the electronic structures. Our further DFT calculations on a free-standing ErCu2 monolayer found it to be a 2D ferromagnet with topological band structures. Our work should stimulate further studies on such 2D rare-earth-based nanostructures and exploration of the use of the tunable electronic structures in such atomically-thin layers.

Controllable dissociations of PH3 molecules on Si(001).

We demonstrate for the first time to our knowledge that controllable dissociation of PH3 adsorption products PHx (x = 2, 1) can be realized by STM (scanning tunneling microscope) manipulation techniques at room temperature. Five dissociative products and their geometric structures are identified via combining STM experiments and first-principle calculations and simulations. In total we realize nine kinds of controllable dissociations by applying a voltage pulse among the PH3-related structures on Si(001). The dissociation rates of the five most common reactions are measured by the I-t spectrum method as a function of voltage. The suddenly increased dissociation rate at 3.3 V indicates a transition from multivibrational excitation to single-step excitation induced by inelastic tunneling electrons. Our studies prove that selectively breaking the chemical bonds of a single molecule on semiconductor surface by STM manipulation technique is feasible.

Arsenic Monolayers Formed by Zero-Dimensional Tetrahedral Clusters and One-Dimensional Armchair Nanochains.

One-dimensional (1D) arsenene nanostructures are predicted to host a variety of interesting physical properties including antiferromagnetic, semiconductor-semimetal transition and quantum spin Hall effect, which thus holds great promise for next-generation electronic and spintronic devices. Herein, we devised a surface template strategy in a combination with surface-catalyzed decomposition of molecular As4 cluster toward the synthesis of the superlattice of ultranarrow armchair arsenic nanochains in a large domain on Au(111). In the low annealing temperature window, zero-dimensional As4 nanoclusters are assembled into continuous films through intermolecular van der Waals and molecule-substrate interactions. At the elevated temperature, the subsequent surface-assisted decomposition of molecular As4 nanoclusters leads to the formation of a periodic array of 1D armchair arsenic nanochains that form a (2 × 3) superstructure on the Au(111) surface. These ultranarrow armchair arsenic nanochains are predicted to have a small bandgap of ∼0.50 eV, in contrast to metallic zigzag chains. In addition, the Au-supported arsenic nanochains can be flipped to form a bilayer structure through tip indentation and manipulation, suggesting the possible transfer of these nanochains from the substrate. The successful realization of arsenic nanostructures is expected to advance low-dimensional physics and infrared optoelectronic nanodevices.

Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors.

Platinum dichalcogenide (PtX2), an emergent group-10 transition metal dichalcogenide (TMD) has shown great potential in infrared photonic and optoelectronic applications due to its layer-dependent electronic structure with potentially suitable bandgap. However, a scalable synthesis of PtSe2 and PtTe2 atomic layers with controlled thickness still represents a major challenge in this field because of the strong interlayer interactions. Herein, we develop a facile cathodic exfoliation approach for the synthesis of solution-processable high-quality PtSe2 and PtTe2 atomic layers for high-performance infrared (IR) photodetection. As-exfoliated PtSe2 and PtTe2 bilayer exhibit an excellent photoresponsivity of 72 and 1620 mA W-1 at zero gate voltage under a 1540 nm laser illumination, respectively, approximately several orders of magnitude higher than that of the majority of IR photodetectors based on graphene, TMDs, and black phosphorus. In addition, our PtSe2 and PtTe2 bilayer device also shows a decent specific detectivity of beyond 109 Jones with remarkable air-stability (>several months), outperforming the mechanically exfoliated counterparts under the laser illumination with a similar wavelength. Moreover, a high yield of PtSe2 and PtTe2 atomic layers dispersed in solution also allows for a facile fabrication of air-stable wafer-scale IR photodetector. This work demonstrates a new route for the synthesis of solution-processable layered materials with the narrow bandgap for the infrared optoelectronic applications.

Symmetric Sodium-Ion Battery Based on Dual-Electron Reactions of NASICON-Structured Na3MnTi(PO4)3 Material.

Symmetric sodium-ion batteries possess promising features such as low cost, easy manufacturing process, and facile recycling post-process, which are suitable for the application of large-scale stationary energy storage. Herein, we proposed a symmetric sodium-ion battery based on dual-electron reactions of a NASICON-structured Na3MnTi(PO4)3 material. The Na3MnTi(PO4)3 electrode can deliver a stable capacity of up to 160 mAh g-1 with a Coulombic efficiency of 97% at 0.1 C by utilizing the redox reactions of Ti3+/4+, Mn2+/3+, and Mn3+/4+. This is the first time to investigate the symmetric sodium-ion full cell using Na3MnTi(PO4)3 as both cathode and anode in the organic electrolyte, demonstrating excellent reversibility and cycling performance with voltage plateaus of about 1.4 and 1.9 V. The full cell exhibits a reversible capacity of 75 mAh g-1 at 0.1 C and an energy density of 52 Wh kg-1. In addition, both ex situ X-ray diffraction (XRD) analysis and first-principles calculations are employed to investigate the sodiation mechanism and structural evolution. The current research provides a feasible strategy for the symmetric sodium-ion batteries to achieve high energy density.

The shielding effects of a C60 cage on the magnetic moments of transition metal atoms inside the corner holes of Si(111)-(7 × 7).

The strong interaction between transition metal (TM) atoms and semiconductor surface atoms may diminish the magnetic moments of the TM atoms and prevent them from being used as single atom spin-based devices. A carbon cage that can encapsulate TM atoms and isolate them from interacting with surface atoms is considered to protect the magnetic moments of the TM atoms. We have studied the magnetic moments of Fe, Co, and Ni atoms adsorbed inside the corner hole of Si(111)-(7 × 7) by using first-principles calculations based on the density functional theory. The results show that when Co and Ni atoms are directly adsorbed inside the corner hole, the magnetic moments are 1.353µB and 0, respectively. However when a C60 cage is used to encapsulate the atoms, the magnetic moments increase to 1.849µB and 0.884µB, respectively. The results show a clear protecting effect of a carbon cage. For Fe with and without C60, the magnetic moments are 2.909µB and 2.825µB, respectively. The presence of a C60 cage can also maintain their magnetic moments. Further analysis shows that the TM atoms possess magnetic moments when the conduction electrons are localized around them. All the results can be well understood in the framework of the Anderson impurity model. Our results demonstrate that a carbon cage may effectively protect the magnetic moments of TM atoms. This provides a new strategy for developing single atom spin-based devices on semiconductors.