ABSTRACT
Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.
ABSTRACT
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here we investigate the impact of dimensionality of epitaxially grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1500% improvement of the coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
ABSTRACT
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. The magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3 , is demonstrated. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. The results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.
ABSTRACT
Artificial superlattices have demonstrated many unique phenomena not found in bulk materials. For this investigation, SrTiO3/SrRuO3 paraelectric/metallic superlattices with various stacking periods were synthesized via pulsed laser deposition. A robust room-temperature ferroelectric polarization (â¼46 µC/cm2) was found in the superlattices with 2 unit cell (u.c.) thick SrRuO3 layers, despite the fact that neither SrTiO3 nor SrRuO3 is inherently ferroelectric. Results obtained from atomically resolved elemental mapping and X-ray photoelectron spectroscopy verified that oxygen vacancies accumulated at the SrTiO3/SrRuO3 interfaces, causing lattice distortions and increased tetragonality (c/a). The observed ferroelectric responses can be mainly attributed to the broken spatial inversion symmetry induced by the ordered distribution of oxygen vacancies at the SrTiO3/SrRuO3 interfaces, coupled with the triggering of external electric field. The resulting polarization mechanism induced by oxygen vacancies suggests viable ways for improving the electrical properties of ferroelectric materials, with the goal of expanding the functionality of a range of electronic devices.
ABSTRACT
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for understanding exotic topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the evolution of AHE with controllable inhomogeneities in SrRuO3 film thickness (tSRO). By exploiting the step-flow growth of SrRuO3 films, we induced a microscopically ordered stripe pattern with one-unit-cell differences in tSRO. The associated spatial distribution of momentum-space Berry curvatures enables a two-channel AHE with hump-like Hall anomalies, which can be continuously engineered according to non-integer tSRO. We further microscopically characterized the stripe-like ferromagnetic domains and two-step magnetic switching behavior in the inhomogeneous SrRuO3 film. These unique features can be utilized to identify the two-channel AHE model and understand its microscopic origin.
ABSTRACT
SrRuO3 as a rare conductive perovskite ruthenate has attracted increasing attention for application in energy conversion. Here, the electrocatalytic activity for the hydrogen evolution reaction (HER) of thermally synthesized layered SrRuO3 is investigated and shows a considerable activation during cathodic polarization in alkaline solution. The analysis demonstrates the electrode activation is caused by the increased hydrophilicity of SrRuO3 surface, revealing the influence of the surface properties on HER performance. For further improving the catalytic activity of perovskite ruthenate, the RuO2 /SrRuO3 (RSRO) heterostructure is fabricated in situ by reducing the thermal decomposition temperature of 1000 °C for SrRuO3 to 600 °C. The appropriate lattice parameter of SrRuO3 ensures a good lattice match, which results in a strong interaction between SrRuO3 and RuO2 . Hence, the RSRO substantially outperforms the corresponding single-component oxides. In addition, the increased active sites induced by the rapid improvement of hydrophilicity of RSRO surface further highlight its structural advantage for catalytic hydrogen generation. The experimental and theoretical computation results consistently validate the positive synergistic effect among SrRuO3 and RuO2 in tuning the atomic and electronic configuration.
ABSTRACT
ABO3 perovskite materials and their derivatives have inherent structural flexibility due to the corner sharing network of the BO6 octahedron, and the large variety of possible structural distortions and strong coupling between lattice and charge/spin degrees of freedom have led to the emergence of intriguing properties, such as high-temperature superconductivity, colossal magnetoresistance, and improper ferroelectricity. Here, an unprecedented polar ferromagnetic metal phase in SrRuO3 (SRO) thin films is presented, arising from the strain-controlled oxygen octahedral rotation (OOR) pattern. For compressively strained SRO films grown on SrTiO3 substrate, oxygen octahedral network relaxation is accompanied by structural phase separation into strained tetragonal and bulk-like orthorhombic phases, and the asymmetric OOR evolution across the phase boundary allows formation of the polar phase, while bulk metallic and ferromagnetic properties are maintained. From the results, it is expected that other oxide perovskite thin films will also yield similar structural environments with variation of OOR patterns, and thereby provide promising opportunities for atomic scale control of material properties through strain engineering.
ABSTRACT
We present the fabrication and exploration of arrays of nanodots of SrRuO3 with dot sizes between 500 and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum Curie temperature TC achieved by dots of 30 nm diameter. This peak in TC is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmission electron microscopy.
ABSTRACT
High dielectric constant (k) materials have been investigated to improve the performance of dynamic random access memory (DRAM) capacitors. However, the conventional binary oxides have reached their fundamental limit of k < 100. In this study, we investigated alternative ternary oxides, SrTiO3 (STO) and (Ba,Sr)TiO3 (BSTO), which were epitaxially grown on SrRuO3 (SRO) using atomic layer deposition (ALD). The structural compatibility between SRO and STO enables the in situ crystallization of STO during ALD at a low temperature of 300 °C. Consequently, STO on SRO exhibited no film deformation, a common issue during high temperature postdeposition annealing, and maintained superior crystallinity at a thin thickness down to 50 Å. Furthermore, the dielectric constant of STO can be adjusted by modulating its tunable ferroelectric and dielectric properties through Ba doping. BSTO, with a high dielectric constant (kmax:527) achieved at a Ba doping concentration of approximately 50%, displayed a low leakage current density (3.9 × 10-8 A cm-2 @ 1 V) and demonstrated excellent reliability of 1012 cycles in the metal-insulator-metal capacitors. This study proposes a promising alternative to satisfy the extreme EOT required for next-generation DRAM capacitors.
ABSTRACT
Electrons in crystals interact closely with quantized lattice degree of freedom, determining fundamental electrodynamic behaviors and versatile correlated functionalities. However, the strength of the electron-phonon interaction is so far determined as an intrinsic value of a given material, restricting the development of potential electronic and phononic applications employing the tunable coupling strength. Here, it is demonstrated that the electron-phonon coupling in SrRuO3 can be largely controlled by multiple intuitive tuning knobs available in synthetic crystals. The coupling strength of quasi-2D SrRuO3 is enhanced by ≈300-fold compared with that of bulk SrRuO3 . This enormous enhancement is attributed to the non-local nature of the electron-phonon coupling within the well-defined synthetic atomic network, which becomes dominant in the limit of the 2D electronic state. These results provide valuable opportunities for engineering the electron-phonon coupling, leading to a deeper understanding of the strongly coupled charge and lattice dynamics in quantum materials.
ABSTRACT
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a large anomalous Hall effect (AHE) whose sign can be readily modified. Here, a hydrogen spillover method is used to tailor the properties of SRO thin films via hydrogen incorporation. It is found that the magnetization and Curie temperature of the films are strongly reduced and, at the same time, the structure evolves from an orthorhombic to a tetragonal phase as the hydrogen content is increased up to ≈0.9 H per SRO formula unit. The structural phase transition is shown, via in situ crystal truncation rod measurements, to be related to tilting of the RuO6 octahedral units. The significant changes observed in magnetization are shown, via density functional theory (DFT), to be a consequence of shifts in the Fermi level. The reported findings provide new insights into the physical properties of SRO via tailoring its lattice symmetry and emergent physical phenomena via the hydrogen spillover technique.
ABSTRACT
Light control of emergent quantum phenomena is a widely used external stimulus for quantum materials. Generally, perovskite strontium ruthenate SrRuO3 has an itinerant ferromagnetism with a low-spin state. However, the phase of intermediate-spin (IS) ferromagnetic metallic state has never been seen. Here, by means of UV-light irradiation, a photocarrier-doping-induced Mott-insulator-to-metal phase transition is shown in a few atomic layers of perovskite IS ferromagnetic SrRuO3- δ . This new metastable IS metallic phase can be reversibly regulated due to the convenient photocharge transfer from SrTiO3 substrates to SrRuO3- δ ultrathin films. These dynamical mean-field theory calculations further verify such photoinduced electronic phase transformation, owing to oxygen vacancies and orbital reconstruction. The optical manipulation of charge-transfer finesse is an alternative pathway toward discovering novel metastable phases in strongly correlated systems and facilitates potential light-controlled device applications in optoelectronics and spintronics.
ABSTRACT
Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.
ABSTRACT
Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition-metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO3 of three different crystal structures is systematically studied. The results of both spin-torque ferromagnetic resonance and in-plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO3 decreases when the epitaxial strain changes from tensile to compressive. The X-ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in-plane axes of SrRuO3 , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.
ABSTRACT
The metal-insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO3 ultrathin films is reported. Uniform and effective termination engineering at the SrRuO3 (001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO2 , a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO3 monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.
ABSTRACT
SrRuO3 (SRO) thin films and their heterostructure have attracted much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft X-ray scattering (RSXS) at the oxygen K edge to investigate the spin configuration of a four-unit-cell SRO film that was grown epitaxially on a single-crystal SrTiO3. The RSXS signal under a magnetic field (â¼0.4 tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.
ABSTRACT
Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO3 layer between ferroelectric BaTiO3 layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO3 films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to â¼3.12 µB/Ru in ultrathin BaTiO3/SrRuO3/BaTiO3 trilayers, which is beyond the theoretical limit of bulk value (2 µB/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO3/SrRuO3 heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO6 oxygen octahedra and subsequent spin-state crossover in SrRuO3, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.
ABSTRACT
Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.
ABSTRACT
Epitaxial strain can be used to tune the properties of complex oxides with perovskite structure. Beyond just lattice mismatch, the use of octahedral rotation mismatch at heterointerfaces could also provide an effective route to manipulate material properties. Here, we examine the evolution of the structural motif (i.e., lattice parameters, symmetry, and octahedral rotations) of SrRuO3 films grown on substrates engineered to have the same lattice parameters, but different octahedral rotations. SrRuO3 films grown on SrTiO3 (001) (no octahedral rotations) and GdScO3-buffered SrTiO3 (001) (with octahedral rotations) substrates are found to exhibit monoclinic and tetragonal symmetry, respectively. Electrical transport and magnetic measurements reveal that the tetragonal films exhibit higher resistivity, lower magnetic Curie temperatures, and more isotropic magnetism as compared to those with monoclinic structure. Synchrotron-based quantification of the octahedral rotation network reveals that the tilting pattern in both film variants is the same (albeit with slightly different magnitudes of in-plane rotation angles). The abnormal rotation pattern observed in tetragonal SrRuO3 indicates a possible decoupling between the internal octahedral rotation and lattice symmetry, which could provide new opportunities to engineer thin-film structure and properties.
ABSTRACT
A new way to induce a large magnetoresistance has been achieved by self-assembled nanostructures consisting of ferromagnetic spinel CoFe2O4 (CFO) and metallic perovskite SrRuO3 (SRO). The interdiffused Fe³âº ions in SRO have paved the way to strong magnetic couplings with CFO nanopillars, resulting in the suppression of spin-polarized electron scattering.