Hybrid 3C-silicon carbide-lithium niobate integrated photonic platform.

In this paper, we demonstrate a novel hybrid 3C-silicon carbide-lithium niobate (3C-SiC-LN) platform for passive and active integrated nanophotonic devices enabled through wafer bonding. These devices are fabricated by etching the SiC layer, with the hybrid optical mode power distributed between SiC and LN layers through a taper design. We present a racetrack resonator-based electro-optic (EO) phase shifter where the resonator is fabricated in SiC while using LN for EO-effect (r33≈ 27 pm/V). The proposed phase shifter demonstrates efficient resonance wavelength tuning with low voltage-length product (Vπ.Lπ ≈ 2.18 V cm) using the EO effect of LN. This hybrid SiC-LN platform would enable high-speed, low-power, and miniaturized photonic devices (e.g., modulators, switches, filters) operable over a broad range of wavelengths (visible to infrared) with applications in both classical and quantum nanophotonics.

Enhanced poling and infiltration for highly efficient electro-optic polymer-based Mach-Zehnder modulators.

An ultra-narrow 40-nm slotted waveguide is fabricated to enable highly efficient, electro-optic polymer modulators. Our measurement results indicate that VπL's below ∼ 1.19 V.mm are possible for the balanced Mach-Zehnder modulators using this ultra-narrow slotted waveguide on a hybrid silicon-organic hybrid platform. Our simulations suggest that VπL's can be further reduced to ∼ 0.35 V.mm if appropriate doping is utilized. In addition to adapting standard recipes, we developed two novel fabrication processes to achieve miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO2 as a carrier barrier to enhance the efficiency of our electro-optic polymers. The anticipated increase in total capacitance due to the TiO2 layer is negligible. Applying our TiO2 surface treatment to the ultra-narrow slot allows us to obtain an improved index change efficiency (∂n/∂V) of ∼ 22% for a 5 nm TiO2 layer. Furthermore, compared to non-optimized cases, our peak measured current during poling is reduced by a factor of ∼ 3.

Polysilicon micro-heaters for resonance tuning in CMOS photonics.

A new, to the best of our knowledge, device platform for tuning the resonance wavelength of integrated photonic resonators based on polysilicon-based micro-heaters for complementary metal-oxide semiconductor (CMOS)-foundry-based active Si photonics is demonstrated. The miniaturized micro-heater can be placed directly on the active Si layer, with a pedestal providing the optical and electrical isolation needed for the implementation of ultrafast active photonic devices such as modulators. The demonstrated devices do not require any additional modifications to the standard CMOS foundry processes. Experiments demonstrate a tuning efficiency of 0.25 nm/mW (or 42 GHz/mW) for a 5-µm-radius microdisk resonator with a loaded quality factor (Q) > 35,000. This polysilicon-based heater demonstrates a tunability of 42 GHz/mW with an average switching time of 60 µs. The proposed compact heater architecture enables it to be kept near to the optical mode, thereby providing efficient and high-speed wavelength tuning for resonant devices.

Dynamic Hybrid Metasurfaces.

Efficient hybrid plasmonic-photonic metasurfaces that simultaneously take advantage of the potential of both pure metallic and all-dielectric nanoantennas are identified as an emerging technology in flat optics. Nevertheless, postfabrication tunable hybrid metasurfaces are still elusive. Here, we present a reconfigurable hybrid metasurface platform by incorporating the phase-change material Ge2Sb2Te5 (GST) into metal-dielectric meta-atoms for active and nonvolatile tuning of properties of light. We systematically design a reduced-dimension meta-atom, which selectively controls the hybrid plasmonic-photonic resonances of the metasurface via the dynamic change of optical constants of GST without compromising the scattering efficiency. As a proof-of-concept, we experimentally demonstrate two tunable metasurfaces that control the amplitude (with relative modulation depth as high as ≈80%) or phase (with tunability >230°) of incident light promising for high-contrast optical switching and efficient anomalous to specular beam deflection, respectively. Our findings further substantiate dynamic hybrid metasurfaces as compelling candidates for next-generation reprogrammable meta-optics.

ITO-based microheaters for reversible multi-stage switching of phase-change materials: towards miniaturized beyond-binary reconfigurable integrated photonics.

Inducing a large refractive-index change is the holy grail of reconfigurable photonic structures, a goal that has long been the driving force behind the discovery of new optical material platforms. Recently, the unprecedentedly large refractive-index contrast between the amorphous and crystalline states of Ge-Sb-Te (GST)-based phase-change materials (PCMs) has attracted tremendous attention for reconfigurable integrated nanophotonics. Here, we introduce a microheater platform that employs optically transparent and electrically conductive indium-tin-oxide (ITO) bridges for the fast and reversible electrical switching of the GST phase between crystalline and amorphous states. By the proper assignment of electrical pulses applied to the ITO microheater, we show that our platform allows for the registration of virtually any intermediate crystalline state into the GST film integrated on the top of the designed microheaters. More importantly, we demonstrate the full reversibility of the GST phase between amorphous and crystalline states. To show the feasibility of using this hybrid GST/ITO platform for miniaturized integrated nanophotonic structures, we integrate our designed microheaters into the arms of a Mach-Zehnder interferometer to realize electrically reconfigurable optical phase shifters with orders of magnitude smaller footprints compared to existing integrated photonic architectures. We show that the phase of optical signals can be gradually shifted in multiple intermediate states using a structure that can potentially be smaller than a single wavelength. We believe that our study showcases the possibility of forming a whole new class of miniaturized reconfigurable integrated nanophotonics using beyond-binary reconfiguration of optical functionalities in hybrid PCM-photonic devices.

Dynamically tunable third-harmonic generation with all-dielectric metasurfaces incorporating phase-change chalcogenides.

Subwavelength nonlinear optical sources with high efficiency have received extensive attention, although strong dynamic controllability of these sources is still elusive. Germanium antimony telluride (GST) as a well-established phase-change chalcogenide is a promising candidate for the reconfiguration of subwavelength nanostructures due to the strong non-volatile change of the index of refraction between its amorphous and crystalline states. Here, we numerically demonstrate an electromagnetically-induced-transparency-based silicon metasurface actively controlled with a quarter-wave asymmetric Fabry-Perot cavity incorporating GST to modulate the relative phase of incident and reflected pump beams. We demonstrate a giant third-harmonic generation (THG) switch with a modulation depth as high as ∼70dB at the resonant band. We also demonstrate the possibility of multi-level THG amplitude modulation for the fundamental C-band by controlling the crystallization fraction of GST at multiple intermediate states. This study shows the high potential of GST-based fast dynamic nonlinear photonic switches for real-world applications ranging from communications to optical computing.

Inverse design of photonic nanostructures using dimensionality reduction: reducing the computational complexity.

In this Letter, we present a deep-learning-based method using neural networks (NNs) for inverse design of photonic nanostructures. We show that by using dimensionality reduction in both the design and the response spaces, the computational complexity of the inverse design algorithm is considerably reduced. As a proof of concept, we apply this method to design multi-layer thin-film structures composed of consecutive layers of two different dielectrics and compare the results using our techniques to those using conventional NNs.

High-Q ultrasensitive integrated photonic sensors based on slot-ring resonator on a 3C-SiC-on-insulator platform.

We demonstrate, to the best of our knowledge, the first high-Q silicon carbide (SiC) integrated photonic sensor based on slot-ring resonators on a 3C-SiC-on-insulator (SiCOI) platform. We experimentally demonstrate an intrinsic Q of 17,400 at around 1310 nm wavelength for a slot-ring resonator with 40 µm radius with water cladding. By applying different concentrations of a sodium chloride (NaCl) solution that covers the devices, measured bulk sensitivities of 264-300 nm/RIU (refractive index unit) are achieved in the slot-ring resonator with a 400-450 nm rail width and a 100-200 nm slot width. The device performance for biomolecular layer sensing (BMLS) is proved by the detection of the cardiac biomarker troponin with 248-322 pm/nm surface sensitivity. The reported slot-ring resonators can be of great interest for diverse sensing applications from visible to infrared wavelengths.

Racetrack microresonator based electro-optic phase shifters on a 3C silicon-carbide-on-insulator platform.

We report, to the best of our knowledge, the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C silicon-carbide-on-insulator (SiCOI) platform working at near-infrared wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality ($ Q $) factors are $\sim\! {30,\!000}$. We show voltage-length product (${{V}_{\pi}} \cdot {{L}_{ \pi}}$) of ${118}\;{{\rm V}\cdot{\rm cm}}$, which corresponds to an EO coefficient ${{r}_{41}}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunable silicon carbide integrated photonic devices that are desirable for applications in nonlinear and quantum photonics over a wide bandwidth that covers visible and infrared wavelengths.

Photocarrier-Induced Active Control of Second-Order Optical Nonlinearity in Monolayer MoS2.

Atomically thin transition metal dichalcogenides (TMDs) in their excited states can serve as exceptionally small building blocks for active optical platforms. In this scheme, optical excitation provides a practical approach to control light-TMD interactions via the photocarrier generation, in an ultrafast manner. Here, it is demonstrated that via a controlled generation of photocarriers the second-harmonic generation (SHG) from a monolayer MoS2 crystal can be substantially modulated up to ≈55% within a timeframe of ≈250 fs, a set of performance characteristics that showcases the promise of low-dimensional materials for all-optical nonlinear data processing. The combined experimental and theoretical study suggests that the large SHG modulation stems from the correlation between the second-order dielectric susceptibility χ(2) and the density of photoexcited carriers in MoS2 . Indeed, the depopulation of the conduction band electrons, at the vicinity of the high-symmetry K/K' points of MoS2 , suppresses the contribution of interband electronic transitions in the effective χ(2) of the monolayer crystal, enabling the all-optical modulation of the SHG signal. The strong dependence of the second-order optical response on the density of photocarriers reveals the promise of time-resolved nonlinear characterization as an alternative route to monitoring carrier dynamics in excited states of TMDs.

High-quality-factor microring resonator for strong atom-light interactions using miniature atomic beams.

An integrated photonic platform is proposed for strong interactions between atomic beams and annealing-free high-quality-factor (Q) microresonators. We fabricated a thin-film, air-clad SiN microresonator with a loaded Q of 1.55×106 around the optical transition of 87Rb at 780 nm. This Q is achieved without annealing the devices at high temperatures, enabling future fully integrated platforms containing optoelectronic circuitry. The estimated single-photon Rabi frequency (2g) is 2π×64MHz 100 nm above the resonator. Our simulation result indicates that miniature atomic beams with a longitudinal speed of 0.2 m/s to 30 m/s will interact strongly with our resonator, allowing for the detection of single-atom transits and realization of scalable single-atom photonic devices. Interactions between racetrack resonators and thermal atomic beams are also simulated.

High-Q microresonators integrated with microheaters on a 3C-SiC-on-insulator platform.

We demonstrate, to the best of our knowledge, the first thermally reconfigurable high-Q silicon carbide (SiC) microring resonators with integrated microheaters on a 3C-SiC-on-insulator platform. We extract a thermo-optic coefficient of around 2.67×10-5/K for 3C-SiC from wavelength shift of a resonator heated by a hot plate. Finally, we fabricate a 40-µm-radius microring resonator with intrinsic Q of 139,000 at infrared wavelengths (∼1550 nm) after integration with a NiCr microheater. By applying current through the microheater, a resonance shift of 30 pm/mW is achieved in the microring, corresponding to ∼50 mW per π phase shift. This platform offers an easy and reliable way for integration with electronic devices as well as great potential for diverse integrated optics applications.

Ultrafast Control of Phase and Polarization of Light Expedited by Hot-Electron Transfer.

All-optical modulation is an entangled part of ultrafast nonlinear optics with promising impacts on tunable optical devices in the future. Current advancements in all-optical control predominantly offer modulation by means of altering light intensity, while the ultrafast manipulation of other attributes of light have yet to be further explored. Here, we demonstrate the active modulation of the phase, polarization, and amplitude of light through the nonlinear modification of the optical response of a plasmonic crystal that supports subradiant, high Q, and polarization-selective resonance modes. The designed mode is exclusively accessible via TM-polarized light, which enables significant phase modulation and polarization conversion within the visible spectrum. To tailor the device performance in the time domain, we exploit the ultrafast transport dynamics of hot electrons at the interface of plasmonic metals and charge acceptor materials to facilitate an ultrafast switching speed. In addition, the operating wavelength of the proposed device can be tuned through the control of the in-plane momentum of light. Our work reveals the viability of dynamic phase and polarization control in plasmonic systems for all-optical switching and data processing.

High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform.

We report a high-quality 3C-silicon carbide (SiC)-on-insulator (SiCOI) integrated photonic material platform formed by wafer bonding of crystalline 3C-SiC to a silicon oxide (SiO2)-on-silicon (Si) substrate. This material platform enables to develop integrated photonic devices in SiC without the need for undercutting the Si substrate, in contrast to the structures formed on conventional 3C-SiC-on-Si platforms. In addition, we show a unique process in the SiCOI platform for minimizing the effect of lattice mismatch during the growth of SiC on Si through polishing after bonding. This results in a high-quality SiCOI platform that enables record high Qs of 142,000 in 40 µm radius SiC microring resonators. The resulting SiCOI platform has a great potential for a wide range of applications in integrated optics, including nonlinear optical devices, quantum optical devices, and high-power optical devices.

Highly-uniform resonator-based visible spectrometer on a Si3N4 platform with robust and accurate post-fabrication trimming.

A resonator array-based spectrometer for visible/near-infrared (NIR) wavelengths is fabricated on a low-loss silicon nitride (Si3N4) material platform. Ideally, a spectrometer should uniformly sample the input spectrum. However, resonator-based spectrometers, in which each spectral sample corresponds to resonance wavelength of one of the resonators in the array, suffer from wavelength sampling non-uniformity caused by the high sensitivity of the resonant wavelengths of different resonators to the dimensional variations caused by fabrication imperfections. Using an alignment-insensitive post-fabrication trimming technique, we reduce the standard deviation (STD) of resonance wavelength of a 60-channel integrated photonic spectrometer in Si3N4 to a record-low value of 5 pm in the visible wavelength range. This approach can be used to realize wideband and uniform visible spectrometers that are desirable for applications such as optical signal processing and biological sensing.

Extending chip-based Kerr-comb to visible spectrum by dispersive wave engineering.

Anomalous group velocity dispersion is a key parameter for generating bright solitons, and thus wideband Kerr frequency combs. Extension of the frequency combs spectrum to visible wavelengths has been a major challenge because of the strong normal dispersion of conventional photonic materials at these wavelengths. In this paper, we numerically demonstrate a wideband frequency comb extending from near-infrared to visible wavelengths (∼1200 nm to 650 nm). The proposed frequency comb micro-resonator takes advantage of a wideband blue-shifted anomalous dispersion, achieved in an optimized over-etched silicon nitride waveguide and strong power transfer to shorter wavelengths through radiative dispersive waves, achieved by modulating the dispersion in a coupled resonator architecture. We show the possibility of obtaining a close to visible dispersive Cherenkov radiation peak that is only 10 dB below the overall comb peak and can be tuned by adjusting the coupling structure in the coupled resonator architecture.

On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

Optical bistability in a one-dimensional photonic crystal resonator using a reverse-biased pn-junction.

Optical bistability provides a simple way to control light with light. We demonstrate low-power thermo-optical bistability caused by the Joule heating mechanism in a one-dimensional photonic crystal (PC) nanobeam resonator with a moderate quality factor (Q ~8900) with an embedded reverse-biased pn-junction. We show that the photocurrent induced by the linear absorption in this compact resonator considerably reduces the threshold optical power. The proposed approach substantially relaxes the requirements on the input optical power for achieving optical bistability and provides a reliable way to stabilize the bistable features of the device.

High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler.

Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 µm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.

Compact, 15 Gb/s electro-optic modulator through carrier accumulation in a hybrid Si/SiO(2)/Si microdisk.

High-speed electro-optic modulators are among the key elements in any optical interconnect system. In this work we design and demonstrate an electro-optic modulator based on carrier accumulation on a multilayer integrated photonic platform comprising a stack of high quality Si, SiO(2), and Si layers. The device consists of a 3-µm radius microdisk with an embedded capacitor. Characterization results reveal an operation bandwidth of exceeding 10 GHz. The device is capable of transmitting 15 Gb/s with the on/off keying format in a single polarization. The proposed structure can be self-trimmed by up to 1 nm in wavelength by applying a dc bias voltage without any power consumption. This feature eliminates the need for power-hungry thermal-based compensation methods to address the resonance wavelength mismatch due to fabrication imperfections.