Dual-band complementary metamaterial perfect absorber for multispectral molecular sensing.

Metamaterial perfect absorbers (MPAs) show great potential in achieving exceptional sensing performance, particularly in the realm of surface-enhanced infrared absorption (SEIRA) spectroscopy. To this aim, it is highly desirable for the localized hotspots to be readily exposed and accessible to analyte with strong mode confinement to enhance absorption. Here, we propose a quasi-three-dimensional MPA based on cross-shaped coupled complementary plasmonic arrays for highly sensitive refractive index sensing and molecular vibrational sensing. Dual-band perfect absorption can be approached with the two plasmonic resonances corresponding to the electric dipole-like mode of cross antenna array and the magnetic dipole-like mode of cross hole array, respectively. Large portions of the electric field of the hotspots are exposed and concentrated in the gap between the elevated cross antenna and its complementary structure on the substrate, leading to improved sensing sensitivities. An ultrathin polymethyl methacrylate (PMMA) film induces a significant redshift of the magnetic dipole-like mode with an 11.8 nm resonance shift per each nanometer polymer thickness. The value is comparable to the reported sensitivity of single molecule layer sensors. Additionally, the simultaneous detection of the C = O and C-H vibrations of PMMA molecules is enabled with the two plasmonic resonances adjusted by changing the lengths of the two cross branches. Remarkably, the observed mode splitting and anti-crossing behavior imply the strong interaction between plasmonic resonance and molecular vibration. Our dual-band MPA based on coupled complementary plasmonic arrays opens a new avenue for developing highly sensitive sensors for the detection of refractive index and multispectral molecular vibrations.

Dual color infrared photodetector with superconducting metamaterials.

Superconducting photodetection offers a wide spectral coverage ranging from the microwave to X-ray, and in the short wavelength range, single photon sensitivity can be achieved. However, in the longer wavelength infrared region, the system detection efficiency is low due to the lower internal quantum efficiency and weak optical absorption. Here, we utilized the superconducting metamatieral to enhance the light coupling efficiency and reach nearly perfect absorption at dual color infrared wavelengths. Dual color resonances arise from hybridization of local surface plasmon mode of the metamaterial structure and the Fabry-Perot-like cavity mode of metal (Nb)-dielectric (Si)-metamatieral (NbN) tri-layer structure. We demonstrated that, at the working temperature of 8 K slightly below TC ∼8.8 K, this infrared detector exhibits the peak responsivity of 1.2 × 106V/W and 3.2 × 106V/W at two resonant frequencies 36.6 THz and 104 THz, respectively. The peak responsivity is enhanced about ∼8 and ∼22 times, respectively, compared to that of non-resonant frequency (67 THz). Our work provides a way to harvest infrared light efficiently and hence improve the sensitivity of superconducting photodetectors in multispectral infrared range, which may find promising applications in thermal image and gas sensing etc.

Convolutional neural networks used for random structure SPP gratings spectral response prediction.

Data-driven design approaches based on deep learning have been introduced into nanophotonics to reduce time-consuming iterative simulations, which have been a major challenge. Here, we report a convolutional neural network (CNN) used to perform the prediction of surface plasmon polariton (SPP) grating output spectra, which is not limited by predefined shapes. For a random given structure, the network can output spectra with effective prediction, so that the simulation results are in excellent agreement with the network prediction results. Compared with the traditional finite-difference time-domain (FDTD) method, the CNN model proposed in this Letter has absolute advantages in speed. Previous studies often used a regular device structure to modify its parameters for prediction; the random structure design method adopted in this Letter also provides a new, to the best of knowledge, idea for device design.

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate.

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS2has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS2film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS2field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (108), large average mobility (∼8.56 cm2V-1s-1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS2, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.

Non-Planckian infrared emission from GaAs devices with electrons and lattice out-of-thermal-equilibrium.

With the downscaled device size, electrons in semiconductor electronics are often electrically driven out-of-thermal-equilibrium with hosting lattices for their functionalities. The thereby electrothermal Joule heating to the lattices can be visualized directly by the noncontact infrared radiation thermometry with the hypothetic Planck distribution at a single characteristic temperature. We report here that the infrared emission spectrum from electrically biased GaAs devices deviates obviously from Planck distribution, due to the additional contribution from non-equilibrium hot electrons whose effective temperature reaches much higher than that of the lattice (Te>Tl). The evanescent infrared emission from these hot electrons is out-coupled by a near-field metamaterial grating and is hence made significant to the total far-field emission spectrum. Resonant emission peak has also been observed when the electron hotspots are managed to overlap spatially with the optical hotspots at the grating resonance. Our work opens a new direction to study nonequilibrium dynamics with (non-Planckian) infrared emission spectroscopy and provides important implications into the microscopic energy dissipation and heat management in nanoelectronics.

Enhanced Peltier Effect in Wrinkled Graphene Constriction by Nano-Bubble Engineering.

Inspired by the promising applications in thermopower generation from waste heat and active on-chip cooling, the thermoelectric and electrothermal properties of graphene have been extensively pursued by seeking ingeniously designed structures with thermoelectric conversion capability. The graphene wrinkle is a ubiquitous structure formed inevitably during the synthesis of large-scale graphene films but the corresponding properties for thermoelectric and electrothermal applications are rarely investigated. Here, the electrothermal Peltier effect from the graphene wrinkle fabricated on a germanium substrate is reported. Peltier cooling and heating across the wrinkle are visualized unambiguously with polarities consistent with p-type doping and in accordance with the wrinkle spatial distribution. By direct patterning of the nano-bubble structure, the current density across the wrinkle can be boosted by current crowding to enhance the Peltier effect. The observed Peltier effect can be attributed to the nonequilibrium charge transport by interlayer tunneling across the van der Waals barrier of the graphene wrinkle. The graphene wrinkle in combination with nano-bubble engineering constitutes an innovative and agile platform to design graphene and other more general two-dimensional (2D) thermoelectrics and opens the possibility for realizing active on-chip cooling for 2D nanoelectronics with van der Waals junctions.

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

Metamaterial perfect absorbers with solid and inverse periodic cross structures for optoelectronic applications.

Metamaterial based on a metal/insulator/metal (MIM) tri-layer structure provides an agile platform to realize high absorption efficiency for a variety of applications including semiconductor optoelectronic detectors. In this work, we use the finite time domain difference (FDTD) method and coupled mode theory (CMT) to numerically study metal/semiconductor/metal (MSM) structures and discuss their effective absorption for optoelectronic application. We compare MSM structures with a different top metal layer design and find that cross shaped absorber (CSA) and it's complementary cross shaped absorber (CCSA) exhibit different phase diagrams due to a distinctive dependence of radiation loss on geometrical parameters. Our results show that CSA (CCSA) structures are suitable for thinner (thicker) sandwiched semiconductor with a larger (smaller) imaginary part of its dielectric constant. The necessary condition to realize a maximum figure of merit (FOM) value for effective absorption is discussed in comparison with the perfect absorber condition. Our work may provide guidelines to design the general light-harvesting optoelectronic devices with high efficiencies based on metamaterial-semiconductor hybrid systems.

Design of triple-band metamaterial absorbers with refractive index sensitivity at infrared frequencies.

A triple-band perfect plasmonic metamaterial absorber based on a metal/insulator/metal (MIM) structure is designed. A new freedom through tuning the thicknesses of each ring structures is introduced to realize a quasi-three-dimensional perfect absorber at three extinction wavelengths by using the finite difference time domain method. The physical machine is explained by the time domain field analyses and the coupled mode theory. The characteristics of the absorber make our proposed strategy applicable for the design of more general multiband and broadband perfect absorbers. In addition, these perfect absorbing metamaterials are found to exhibit excellent performance in refractive index sensing.

Plasmonic focusing of infrared SNOM tip patterned with asymmetric structures.

Several scattering type metal tips patterned with asymmetric metal/dielectric bump gratings are studied and proved to be efficient in focusing light energy into nano 'hot spot'. The dielectric bump tip shows complex mechanisms including local geometric resonance, surface plasmon polariton (SPP) standing wave resonance and Fano effect in the near-field enhancement. Additionally, considering the practical situation, we also demonstrate that, for the case of bending tip surface, the grating coupling method for plasmonic nano-focusing is still applicable if the intervals between neighboring bumps are well designed according to the surface bending curvature. With practical realizations, our results could benefit not only infrared scanning near-field optical microscopes (SNOMs) but also many other applications in nanotechnology such as sensing and lithography.

Reconfigurable memlogic long wave infrared sensing with superconductors.

Optical sensors with in-cell logic and memory capabilities offer new horizons in realizing machine vision beyond von Neumann architectures and have been attempted with two-dimensional materials, memristive oxides, phase-changing materials etc. Noting the unparalleled performance of superconductors with both quantum-limited optical sensitivities and ultra-wide spectrum coverage, here we report a superconducting memlogic long-wave infrared sensor based on the bistability in hysteretic superconductor-normal phase transition. Driven cooperatively by electrical and optical pulses, the device offers deterministic in-sensor switching between resistive and superconducting (hence dissipationless) states with persistence > 105 s. This results in a resilient reconfigurable memlogic system applicable for, e.g., encrypted communications. Besides, a high infrared sensitivity at 12.2 µm is achieved through its in-situ metamaterial perfect absorber design. Our work opens the avenue to realize all-in-one superconducting memlogic sensors, surpassing biological retina capabilities in both sensitivity and wavelength, and presents a groundbreaking opportunity to integrate visional perception capabilities into superconductor-based intelligent quantum machines.

Field-Effect Thermoelectric Hotspot in Monolayer Graphene Transistor.

Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field-effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is used to examine a current-carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. It is revealed for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate-controlled charge redistribution and a shift in the Dirac point position, an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tenability is demonstrated. This study reveals the field-effect Peltier contribution in a single graphene-material channel of transistors, offering valuable insights into field-effect thermoelectrics and future on-chip energy management.

A preliminary design of a knot undulator.

The magnetic field configuration of the previously proposed knot undulator [Qiao et al. (2009). Rev. Sci. Instrum. 80, 085108] is realised in the design of a hybridized elliptically polarized undulator, which is presented. Although the details of the field distribution are not the same as those in the theoretical proposal, it is demonstrated that the practical knot undulator could work perfectly. In order to understand the minor discrepancies of the two, mathematical formulae of the synchrotron radiation are derived based on the Fourier transform of the magnetic field. From the results of calculations by simulation program, the discrepancies could be well interpreted by the corresponding formulae. The results show the importance of optimization of the end sections of the knot undulator to suppress the on-axis heat load. Furthermore, a study of the impact of the undulator on beam dynamics of the storage ring was conducted using the Shanghai Synchrotron Radiation Facility as an example and the results show that the knot undulator has little effect on the beam.

Plasmonic light harvesting for multicolor infrared thermal detection.

Here we combined experiments and theory to study the optical properties of a plasmonic cavity consisting of a perforated metal film and a flat metal sheet separated by a semiconductor spacer. Three different types of optical modes are clearly identified-the propagating and localized surface plasmons on the perforated metal film and the Fabry-Perot modes inside the cavity. Interactions among them lead to a series of hybridized eigenmodes exhibiting excellent spectral tunability and spatially distinct field distributions, making the system particularly suitable for multicolor infrared light detections. As an example, we design a two-color detector protocol with calculated photon absorption efficiencies enhanced by more than 20 times at both colors, reaching ~42.8% at f1 = 20.0THz (15µm in wavelength) and ~46.2% at f2 = 29.5THz (~10.2µm) for a 1µm total thickness of sandwiched quantum wells.

Bound chiral magnonic polariton states for ideal microwave isolation.

Bound states in the continuum (BICs) present a unique solution for eliminating radiation loss. So far, most reported BICs are observed in transmission spectra, with only a few exceptions being in reflection spectra. The correlation between reflection BICs (r-BICs) and transmission BICs (t-BICs) remains unclear. Here, we report the presence of both r-BICs and t-BICs in a three-mode cavity magnonics. We develop a generalized framework of non-Hermitian scattering Hamiltonians to explain the observed bidirectional r-BICs and unidirectional t-BICs. In addition, we find the emergence of an ideal isolation point in the complex frequency plane, where the isolation direction can be switched by fine frequency detuning, thanks to chiral symmetry protection. Our results demonstrate the potential of cavity magnonics and also extend the conventional BICs theory through the application of a more generalized effective Hamiltonians theory. This work offers an alternative idea for designing functional devices in general wave optics.

Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices.

The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. Recent experimental progress in nanothermetry has enabled studies of the microscopic temperature profiles of nanostructured metals, semiconductors, two-dimensional material, and molecular junctions. However, observations of thermoelectric (such as nonequilibrium Peltier and Thomson) effect in prevailing silicon (Si)-a critical step for on-chip refrigeration using Si itself-have not been addressed so far. Here, we carry out nanothermometric imaging of both electron temperature (Te) and lattice temperature (TL) of a Si nanoconstriction device and find obvious thermoelectric effect in the vicinity of the electron hotspots: When the electrical current passes through the nanoconstriction channel generating electron hotspots (with Te~1500 K being much higher than TL~320 K), prominent thermoelectric effect is directly visualized attributable to the extremely large electron temperature gradient (~1 K/nm). The quantitative measurement shows a distinctive third-power dependence of the observed thermoelectric on the electrical current, which is consistent with the theoretically predicted nonequilibrium thermoelectric effects. Our work suggests that the nonequilibrium hot carriers may be potentially utilized for enhancing the thermoelectric performance and therefore sheds new light on the nanoscale thermal management of post-Moore nanoelectronics.

Non-Hermitian control between absorption and transparency in perfect zero-reflection magnonics.

Recent works in metamaterials and transformation optics have demonstrated exotic properties in a number of open systems, including perfect absorption/transmission, electromagnetically induced transparency, cloaking or invisibility, etc. Meanwhile, non-Hermitian physics framework has been developed to describe the properties of open systems, however, most works related to this focus on the eigenstate properties with less attention paid to the reflection characteristics in complex frequency plane, despite the usefulness of zero-reflection (ZR) for applications. Here we demonstrate that the indirectly coupled two-magnon system not only exhibits non-Hermitian eigenmode hybridization, but also ZR states in complex frequency plane. The observed perfect-ZR (PZR) state, i.e., ZR with pure real frequency, is manifested as infinitely narrow reflection dips (~67 dB) with infinite group delay discontinuity. This reflection singularity of PZR distinguishes from the resonant eigenstates but can be adjusted on or off resonance with the eigenstates. Accordingly, the absorption and transmission can be flexibly tuned from nearly full absorption (NFA) to nearly full transmission (NFT) regions.

Spontaneous rotational symmetry breaking in KTaO3 heterointerface superconductors.

Broken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of s-wave and p-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO3/KTaO3. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO3 heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.

One-step rolling fabrication of VO2 tubular bolometers with polarization-sensitive and omnidirectional detection.

Uncooled infrared detection based on vanadium dioxide (VO2) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO2 nanomembranes. This tubular VO2 bolometer exhibits a detectivity of ~2 × 108 cm Hz1/2 W-1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.

Fourfold Symmetric Superconductivity in Spinel Oxide LiTi2O4(001) Thin Films.

The charge frustration with the mixed-valence state inherent to LiTi2O4, which is found to be the only oxide superconductor with spinel structure, is the impetus for paying special attention to unveil the underlying intriguing superconducting properties. Here, we report a pronounced fourfold rotational symmetry of the superconductivity in high-quality single-crystalline LiTi2O4(001) thin films. Both the magnetoresistivity and upper critical field under an applied magnetic field manifest striking fourfold oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the unconventional d-wave superconducting Cooper pairs with the irreducible representation of Eg protected by the Oh point group in cubic LiTi2O4. Our findings show the nontrivial character of the pairing interaction in a three-dimensional spinel oxide superconductor.