Broadband and low-cross talk mode multiplexer based on subwavelength-assisted phase matching.

Integrated mode multiplexers are key components in photonic networks and are crucial to achieving higher data density. Asymmetric directional couplers represent one of the most common multiplexing architectures, owing to their low losses and scalability, but further bandwidth enhancements are sought after. In this Letter, we demonstrate a multiplexer/demultiplexer link based on asymmetric directional couplers assisted by subwavelength grating metamaterials. Through subwavelength-assisted phase matching, low losses and cross talk are achieved on a small form factor over a broad bandwidth. Experimental measurements show insertion losses under 0.8 dB and cross talk under -19.8 dB in a 170 nm bandwidth (1500 nm to 1670 nm) for a full multiplexer/demultiplexer link.

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires.

Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the contacts to the NW, which should exhibit ohmic behavior with low resistance and should be formed in a reproducible manner. In the case of heterostructure NWs for high-mobility applications that host a two-dimensional electron gas, ohmic contacts are particularly challenging to implement since the NW core constituting the conduction channel is away from the NW surface. We investigated contact formation to modulation-doped GaAs/(Al,Ga)As core/shell NWs using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy and electron tomography to correlate microstructure, diffusion profile and chemical composition of the NW contact region with the current-voltage (I-V) characteristics of the contacted NWs. Our results illustrate how diffusion, alloying and phase formation processes essential to the effective formation of ohmic contacts are more intricate than in planar layers, leading to reproducibility challenges even when the processing conditions are the same. We demonstrate that the NW geometry plays a crucial role in the creation of good contacts. Both ohmic and rectifying contacts were obtained under nominally identical processing conditions. Furthermore, the presence of Ge in the NW core, in the absence of Au and Ni, was found as the key factor leading to ohmic contacts. The analysis contributes to the current understanding of ohmic contact formation to heterostructure core/shell NWs offering pathways to enhance the reproducibility and further optimization of such NW contacts.