Propagation of surface plasma waves in metal films perforated with n × n lattices of holes (n = 2 to 72).

The propagation of surface plasma waves (SPWs) in 90 nm-thick Au films perforated with n × n square lattices of circular holes, referred to as n-metal photonic crystals (n-MPCs), is investigated. The hole period was set to 3 µm with n = 2, 4, 6, 8, 12, 18, 24, 36, and 72. For each n-MPC, the total number of holes was conserved to 5184 (= 72 × 72), which were grouped to form an Mn × Mn (Mn = 72/n) array of lattices, evenly spaced on 384 × 384 µm2. The n-MPCs were individually integrated on semi-insulating GaAs substrates. In the transmission through them, the primary peak by the SPW excited at the n-MPC/GaAs interface exhibits clear variation with n in its wavelength and intensity. It begins to appear for n ∼ 4 and its intensity is increased with n but saturated for n∼ x> 36 with Fano lineshape. These imply the SPW excitation is significantly affected by the boundary and number of holes in each lattice. Such lattice size-dependent transmission is compared with the absorption of the quantum dot infrared photodetectors identically coupled to the n-MPCs. In the absorption, the saturation of the peak intensity is observed for n∼ x> 24, lower than the ∼36 in the transmission. Their difference is characterized with the SPW propagation and decay that critically depend on the dielectric properties of devices as well as the number of holes and boundaries of each lattice in plasmonic excitation.

Visible (400- to 700-nm) chirped-grating-coupled waveguide spectrometer.

An integrable on-chip spectrometer, based on a transversely-chirped-grating waveguide-coupler for the 400- to 700-nm visible spectral range is demonstrated. For a fixed angle of incidence, the coupling wavelength is dependent on the local grating period and the waveguide structure. The transversely-chirped-input grating is fabricated on a SiO2-Si3N4-SiO2 waveguide atop a Si substrate by interferometric lithography in two sections on a single silicon substrate. A uniform period grating, separated from the input coupler by a propagation region, is provided for out-coupling to a 2048 element CMOS detector array. The incident light with wavelength spanning 400- to 700-nm is coupled into waveguide at 33.5° through the chirped grating coupler. A resolution of ∼ 1.2 nm is demonstrated without any signal processing reconstruction.

Analysis of Fano lineshape in extraordinary optical transmission.

We analyze the lineshape of the extraordinary optical transmission (EOT) associated with surface plasma waves (SPWs) excited with a metal photonic crystal (MPC), an Au film perforated with a 2.6 µm period, two-dimensional array of holes, integrated atop a GaAs substrate. From its asymmetry by Fano interference between transmission mediated by SPWs and direct transmission through individual holes, the resonance energy of the fundamental SPW propagating along the MPC/GaAs interface is extracted as 138.8 meV. This energy, the reference of the analysis, is slightly higher than the energy of the apparent peak of the EOT but lower than that of the Rayleigh anomaly closely related to the direct transmission. Its accuracy is verified with an identical MPC integrated on a quantum dot infrared photodetector coupled to the same SPW. Additional lineshape parameters, including relative strength of the two pathways to the transmission and SPW broadening, are determined from experiments. A condition of the Fano interference for EOT, critical to the intensity of its peak transmission, is established with their relations.

Image quality improvement for optical imaging interferometric microscopy.

Imaging interferometric microscopy (IIM) is an optical microscopy resolution enhancement technique involving combining multiple sub-images to increase resolution. Several image reconstruction challenges can degrade the image quality including the frequency, phase deviations between sub-images, and maintenance of a uniform frequency response across the entire space. This work proposes methods to address these issues. The methods are first compared in simulation using a Manhattan structure of 260-nm critical dimension with 2-µm-pitch calibration grating on the sides. The proposed correction methods are then applied to the experimental results and found to be effective in improving the image quality of IIM.

Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics.

A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photonics is reported. The detector is designed to provide a broadband absorption [full width at half maximum (FWHM) ≳ 2 µm] peaked at ∼5.5 µm, corresponding to transitions from the ground state of the quantum dot to the quasi-continuum resonance state above the quantum well. From the coupling of this transition to the surface plasma wave (SPW) excited by an Au film atop the detector, fabricated with a 1.5 µm-period, 2-dimensional array of square holes, a narrowband SPW enhancement peaked at 4.8 µm with an FWHM less than 0.5 µm is achieved. At ∼90 K, a peak responsivity enhanced ∼5× by the plasmonic coupling is observed. Simulation reveals that this enhancement corresponds to collecting ∼6% of the incident light; ∼40% of the total absorption by the SPW excitation at the peak wavelength.

Chirped-grating spectrometer-on-a-chip.

We demonstrate an on-chip spectrometer readily integrable with CMOS electronics. The structure is comprised of a SiO2/Si3N4/SiO2 waveguide atop a silicon substrate. A transversely chirped grating is fabricated, in a single-step optical lithography process, on a portion of the waveguide to provide angle and wavelength dependent coupling to the guided mode. The spectral and angular information is encoded in the spatial dependence of the grating period. A uniform pitch grating area, separated from the collection area by an unpatterned propagation region, provides the out-coupling to a CMOS detector array. A resolution of 0.3 nm at 633 nm with a spectral coverage tunable across the visible and NIR (to ∼ 1 µm limited by the Si photodetector) by changing the angle of incidence, is demonstrated without the need for any signal processing deconvolution. This on-chip spectrometer concept will cost effectively enable a broad range of applications that are beyond the reach of current integrated spectroscopic technologies.

Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement.

We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In0.15Ga0.85As/GaAs dots-in-a-well (Dwell) quantum dot infrared photodetector (QDIP) having a single-color response at ∼10 µm. A gold film perforated with a square array of complex, non-circular apertures is employed to manipulate the near-fields of the fundamental SPW. The quantum efficiency is quantitatively divided into absorption efficiency strongly enhanced by the SPW, and collection efficiency mostly independent of it. In the absorption efficiency, the evanescent near-fields of the fundamental SPW critically enhances QDIP performance but undergoes the attenuation by the absorption in the Dwell that ultimately limits the quantum efficiency. For the highest quantum efficiency available with plasmonic coupling, an optimal overlap between Dwell and SPW near-fields is required. Based on experiment and simulation, the upper limit of the plasmonic enhancement in quantum efficiency for the present device is addressed.

Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy.

The initial stages of the nucleation of cubic (c-) GaN in heterophase epitaxy on a Si v-groove are investigated. Growth of GaN on a nanoscale {111}-faceted v-groove fabricated into a Si(001) substrate proceeds in the hexagonal (h-) phase that induces a secondary v-groove replicating the substrate topography with two opposing {0001} facets. The secondary v-groove is then orientationally mismatched at the junction of the h-GaN facets (h -h junction) resulting in structural instability. This instability is relieved either by the formation of voids that reduce the actual junction area or by the transition to c-phase (h-c transition) suppressing further extension of the h-h junction. The distribution of voids that is locally affected by the island growth mode of h-GaN on Si(111) and the imperfection in the groove geometry impacts the initial stage of heterophase epitaxy. Primarily, The h-c transition is observed as a non-local phenomenon; it occurs homogeneously and simultaneously along the bottom of the entire secondary groove and forms a one-dimensional (1D) seed layer except for some interruptions where the h-h junction is defected by gaps or incomplete voids. Between these interruptions, epitaxy retains a single crystal but results in a series of c-GaN nanodots on the seed layer with large fluctuation in size and spacing. The adatom incorporation observed in this heterophase epitaxy is a 1D analog to the wetting of a substrate followed by the self-assembly in conventional quantum dot epitaxy. The surface morphology of the c-GaN nanodots is governed by the faceting mostly composed of (001)- and (11n)-orientations and the roughening between these facets that ultimately affect the morphology of the final top surface of the c-III-N. The interruptions interfere with the homogeneity of the h-c transition and can cause antiphase defects and mosaicity. Based on experimental results, a solution to improve these issues is proposed.

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation.

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 µm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the µm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 µS µm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

CMOS-compatible plenoptic detector for LED lighting applications.

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Analysis of subwavelength metal hole array structure for the enhancement of back-illuminated quantum dot infrared photodetectors.

This paper is focused on analyzing the impact of a two-dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2D-Au-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show that the performance of the DWELL focal plane array (FPA) is improved by enhancing the coupling to active layer via local field engineering resulting from a surface plasmon polariton mode and a guided Fabry-Perot mode. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors. Experimental results demonstrate the enhanced signal-to-noise ratio by the 2D-Au-CHA integrated FPA as compared to the DWELL FPA. A comparison between the experiment and the simulation shows a good agreement.

Ultrafast optical wide field microscopy.

We have developed a new imaging method, ultrafast optical wide field microscopy, capable of rapidly acquiring wide field images of nearly any sample in a non-contact manner with high spatial and temporal resolution. Time-resolved images of the photoinduced changes in transmission for a patterned semiconductor thin film and a single silicon nanowire after optical excitation are captured using a two-dimensional smart pixel array detector. These images represent the time-dependent carrier dynamics with high sensitivity, femtosecond time resolution and sub-micrometer spatial resolution.

Free carrier induced spectral shift for GaAs filled metallic hole arrays.

For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

Solid-immersion imaging interferometric nanoscopy to the limits of available frequency space.

Imaging interferometric nanoscopy (IIN) is a synthetic aperture approach offering the potential of optical resolution to the linear-system limit of optics (~λ/4n). The immersion advantages of IIN can be realized if the object is in close proximity to a solid-immersion medium with illumination and collection through the substrate and coupling this radiation to air by a grating on the medium surface opposite the object. The spatial resolution as a function of the medium thickness and refractive index as well as the field-of-view of the objective optical system is derived and applied to simulations.

Ultrafast nonlinear optical spectroscopy of a dual-band negative index metamaterial all-optical switching device.

We study the nonlinear optical response of a fishnet structure-metamaterial all-optical switching device that exhibits two near-infrared negative-index resonances. We study and compare the nonlinear optical response at both resonances and identify transient spectral features associated with the negative index resonance. We see a significantly stronger response at the longer wavelength resonance, but identical temporal dynamics at both resonances, providing insight into separately engineering the switching time and switching ratio of such a fishnet structure metamaterial all-optical switch. We also numerically reproduce the nonlinear behavior of our device using the Drude conductivity model and a finite integration technique over wide spectral and pump fluence ranges. Thereby, we show that beyond the linear properties of the device, the magnitude of the pump-probe response is completely described by only two material parameters. These results provide insight into engineering various aspects of the nonlinear response of fishnet structure metamaterials.

Four-color laser white illuminant demonstrating high color-rendering quality.

Solid-state lighting is currently based on light-emitting diodes (LEDs) and phosphors. Solid-state lighting based on lasers would offer significant advantages including high potential efficiencies at high current densities. Light emitted from lasers, however, has a much narrower spectral linewidth than light emitted from LEDs or phosphors. Therefore it is a common belief that white light produced by a set of lasers of different colors would not be of high enough quality for general illumination. We tested this belief experimentally, and found the opposite to be true. This result paves the way for the use of lasers in solid-state lighting.

Quantum Hall ferromagnetism in the presence of tunable disorder.

In this Letter, we report our recent experimental results on the energy gap of the ν=1 quantum Hall state (Δ(ν=1)) in a quantum antidot array sample, where the effective disorder potential can be tuned continuously. Δ(ν=1) is nearly constant at small effective disorders, and collapses at a critical disorder. Moreover, in the weak disorder regime, Δ(ν=1) shows a B(total)(1/2) dependence in tilted magnetic field measurements, while in the strong disorder regime, Δ(ν=1) is linear in B(total), where B(total) is the total magnetic field at ν=1. We discuss our results within several models involving the quantum Hall ferromagnetic ground state and its interplay with sample disorder.

Tailoring anisotropic wetting properties on submicrometer-scale periodic grooved surfaces.

The use of simple plasma treatments and polymer deposition to tailor the anisotropic wetting properties of one-dimensional (1D) submicrometer-scale grooved surfaces, fabricated using interferometric lithography in photoresist polymer films, is reported. Strongly anisotropic wetting phenomena are observed for as-prepared 1D grooved surfaces for both positive and negative photoresists. Low-pressure plasma treatments with different gas compositions (e.g., CHF(3), CF(4), O(2)) are employed to tailor the anisotropic wetting properties from strongly anisotropic and hydrophobic to hydrophobic with very high contact angle and superhydrophilic with a smaller degree of wetting anisotropy and without changing the structural anisotropy. The change of the surface wetting properties for these 1D patterned surfaces is attributed to a change in surface chemical composition, monitored using XPS. In addition, the initial anisotropic wetting properties on 1D patterned samples could be modified by coating plasma treated samples with a thin layer of polymer. We also demonstrated that the wetting properties of 1D grooved surfaces in a Si substrate could be tuned with similar plasma treatments. The ability to tailor anisotropic wetting on 1D patterned surfaces will find many applications in microfluidic devices, lab-on-a-chip systems, microreactors, and self-cleaning surfaces.

Large-area nanopatterning of self-assembled monolayers of alkanethiolates by interferometric lithography.

We demonstrate that interferometric lithography provides a fast, simple approach to the production of patterns in self-assembled monolayers (SAMs) with high resolution over square centimeter areas. As a proof of principle, two-beam interference patterns, formed using light from a frequency-doubled argon ion laser (244 nm), were used to pattern methyl-terminated SAMs on gold, facilitating the introduction of hydroxyl-terminated adsorbates and yielding patterns of surface free energy with a pitch of ca. 200 nm. The photopatterning of SAMs on Pd has been demonstrated for the first time, with interferometric exposure yielding patterns of surface free energy with similar features sizes to those obtained on gold. Gold nanostructures were formed by exposing SAMs to UV interference patterns and then immersing the samples in an ethanolic solution of mercaptoethylamine, which etched the metal substrate in exposed areas while unoxidized thiols acted as a resist and protected the metal from dissolution. Macroscopically extended gold nanowires were fabricated using single exposures and arrays of 66 nm gold dots at 180 nm centers were formed using orthogonal exposures in a fast, simple process. Exposure of oligo(ethylene glycol)-terminated SAMs to UV light caused photodegradation of the protein-resistant tail groups in a substrate-independent process. In contrast to many protein patterning methods, which utilize multiple steps to control surface binding, this single step process introduced aldehyde functional groups to the SAM surface at exposures as low as 0.3 J cm(-2), significantly less than the exposure required for oxidation of the thiol headgroup. Although interferometric methods rely upon a continuous gradient of exposure, it was possible to fabricate well-defined protein nanostructures by the introduction of aldehyde groups and removal of protein resistance in nanoscopic regions. Macroscopically extended, nanostructured assemblies of streptavidin were formed. Retention of functionality in the patterned materials was demonstrated by binding of biotinylated proteins.