Detalhe da pesquisa
1.
Lateral GeSn p-i-n photodetectors on insulator prepared by the rapid melting growth method.
Opt Lett
; 49(5): 1365-1368, 2024 Mar 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-38427014
2.
Sn component gradient GeSn photodetector with 3â dB bandwidth over 50â GHz for extending L band telecommunication.
Opt Lett
; 48(23): 6148-6151, 2023 Dec 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-38039213
3.
Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform.
Opt Express
; 30(23): 41943-41953, 2022 Nov 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-36366658
4.
High-speed and high-power germanium photodetector based on a trapezoidal absorber.
Opt Lett
; 47(13): 3263-3266, 2022 Jul 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-35776601
5.
GeSn resonance cavity enhanced photodetector with gold bottom reflector for the L band optical communication.
Opt Lett
; 47(17): 4315-4318, 2022 Sep 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-36048642
6.
High-performance waveguide-coupled lateral Ge/Si avalanche photodetector.
Opt Lett
; 47(17): 4463-4466, 2022 Sep 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-36048679
7.
High-power back-to-back dual-absorption germanium photodetector.
Opt Lett
; 45(6): 1358-1361, 2020 Mar 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-32163965
8.
Study of GePb photodetectors for shortwave infrared detection.
Opt Express
; 27(13): 18038-18043, 2019 Jun 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-31252752
9.
Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source.
Small
; 14(17): e1704414, 2018 Apr.
Artigo
em Inglês
| MEDLINE | ID: mdl-29611368
10.
Theoretical study of the bandgap regulation of a two-dimensional GeSn alloy under biaxial strain and uniaxial strain along the armchair direction.
Phys Chem Chem Phys
; 20(36): 23344-23351, 2018 Sep 19.
Artigo
em Inglês
| MEDLINE | ID: mdl-30175833
11.
Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy.
Opt Lett
; 42(8): 1608-1611, 2017 Apr 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-28409810
12.
Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys.
Phys Chem Chem Phys
; 19(39): 27031-27037, 2017 Oct 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-28959810
13.
Compact two-mode (de)multiplexer based on symmetric Y-junction and multimode interference waveguides.
Opt Express
; 22(5): 5781-6, 2014 Mar 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-24663916
14.
GeSi modulator based on two-mode interference.
Appl Opt
; 53(2): 221-5, 2014 Jan 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-24514053
15.
Harnessing microcomb-based parallel chaos for random number generation and optical decision making.
Nat Commun
; 14(1): 4590, 2023 Jul 31.
Artigo
em Inglês
| MEDLINE | ID: mdl-37524697
16.
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.
Opt Express
; 20(20): 22327-33, 2012 Sep 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-23037381
17.
GeSn p-i-n photodetector for all telecommunication bands detection.
Opt Express
; 19(7): 6400-5, 2011 Mar 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-21451667
18.
Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation.
J Nanosci Nanotechnol
; 10(11): 7428-31, 2010 Nov.
Artigo
em Inglês
| MEDLINE | ID: mdl-21137951
19.
Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn.
Sci Rep
; 10(1): 6161, 2020 Apr 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-32273570
20.
Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes.
Nanoscale Res Lett
; 14(1): 3, 2019 Jan 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-30607636