Nondestructive Measurements of the Mechanical and Structural Properties of Nanostructured Metalattices.

Metalattices are artificial 3D solids, periodic on sub-100 nm length scales, that enable the functional properties of materials to be tuned. However, because of their complex structure, predicting and characterizing their properties is challenging. Here we demonstrate the first nondestructive measurements of the mechanical and structural properties of metalattices with feature sizes down to 14 nm. By monitoring the time-dependent diffraction of short wavelength light from laser-excited acoustic waves in the metalattices, we extract their acoustic dispersion, Young's modulus, filling fraction, and thicknesses. Our measurements are in excellent agreement with macroscopic predictions and potentially destructive techniques such as nanoindentation and scanning electron microscopy, with increased accuracy over larger areas. This is interesting because the transport properties of these metalattices do not obey bulk predictions. Finally, this approach is the only way to validate the filling fraction of metalattices over macroscopic areas. These combined capabilities can enable accurate synthesis of nanoenhanced materials.

Extreme electronic bandgap modification in laser-crystallized silicon optical fibres.

For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near- and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.

Structural and Elastic Properties of Empty-Pore Metalattices Extracted via Nondestructive Coherent Extreme UV Scatterometry and Electron Tomography.

Semiconductor metalattices consisting of a linked network of three-dimensional nanostructures with periodicities on a length scale <100 nm can enable tailored functional properties due to their complex nanostructuring. For example, by controlling both the porosity and pore size, thermal transport in these phononic metalattices can be tuned, making them promising candidates for efficient thermoelectrics or thermal rectifiers. Thus, the ability to characterize the porosity, and other physical properties, of metalattices is critical but challenging, due to their nanoscale structure and thickness. To date, only metalattices with high porosities, close to the close-packing fraction of hard spheres, have been studied experimentally. Here, we characterize the porosity, thickness, and elastic properties of a low-porosity, empty-pore silicon metalattice film (∼500 nm thickness) with periodic spherical pores (∼tens of nanometers), for the first time. We use laser-driven nanoscale surface acoustic waves probed by extreme ultraviolet scatterometry to nondestructively measure the acoustic dispersion in these thin silicon metalattice layers. By comparing the data to finite element models of the metalattice sample, we can extract Young's modulus and porosity. Moreover, by controlling the acoustic wave penetration depth, we can also determine the metalattice layer thickness and verify the substrate properties. Additionally, we utilize electron tomography images of the metalattice to verify the geometry and validate the porosity extracted from scatterometry. These advanced characterization techniques are critical for informed and iterative fabrication of energy-efficient devices based on nanostructured metamaterials.

Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices.

Controlling the thermal conductivity of semiconductors is of practical interest in optimizing the performance of thermoelectric and phononic devices. The insertion of inclusions of nanometer size in a semiconductor is an effective means of achieving such control; it has been proposed that the thermal conductivity of silicon could be reduced to 1 W/m/K using this approach and that a minimum in the heat conductivity would be reached for some optimal size of the inclusions. Yet the experimental verification of this design rule has been limited. In this work, we address this question by studying the thermal properties of silicon metalattices that consist of a periodic distribution of spherical inclusions with radii from 7 to 30 nm, embedded into silicon. Experimental measurements confirm that the thermal conductivity of silicon metalattices is as low as 1 W/m/K for silica inclusions and that this value can be further reduced to 0.16 W/m/K for silicon metalattices with empty pores. A detailed model of ballistic phonon transport suggests that this thermal conductivity is close to the lowest achievable by tuning the radius and spacing of the periodic inhomogeneities. This study is a significant step in elucidating the scaling laws that dictate ballistic heat transport at the nanoscale in silicon and other semiconductors.