Sequential Doping Reveals the Importance of Amorphous Chain Rigidity in Charge Transport of Semi-Crystalline Polymers.

Sequential doping is a promising new doping technique for semicrystalline polymers that has been shown to produce doped films with higher conductivity and more uniform morphology than conventional doping processes, and where the dopant placement in the film can be controlled. As a relatively new technique, however, much work is needed to understand the resulting polymer-dopant interactions upon sequential doping. A combination of infrared spectroscopy and theoretical simulations shows that the dopants selectively placed in the amorphous regions in the film via sequential doping result in highly localized polarons. We find that the presence of dopants within the amorphous regions of the film leads to an increase in conjugation length of the amorphous chains upon doping, increasing film connectivity and hence improving the overall conductivity of the film compared with the conventional doping processes.

Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.

Strain effects on the work function of an organic semiconductor.

Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.