480†nm InGaN-based cyan laser diode grown on Si by interface engineering of active region.

InGaN-based long wavelength laser diodes (LDs) grown on Si are highly desirable for expanding the applications in laser display and lighting. Proper interface engineering of high In-content InGaN multi-quantum wells (MQWs) is urgently required for the epitaxial growth of InGaN-based long wavelength LD on Si, because the deteriorated interfaces and crystalline quality of InGaN MQWs can severely increase the photon scattering and further exacerbate the internal absorption loss of LDs, which prevents the lasing wavelength of InGaN-based LDs from extending. In this work, a significantly improved morphology and sharp interface of the InGaN active region are obtained by using a graded-compositional InGaN lower waveguide (LWG) capped with a 10-nm-thick Al0.1Ga0.9N layer. The V-pits density of the InGaN LWG was one order of magnitude reduction from 4.8 × 108 to 3.6 × 107 cm-2 along with the root-mean-square surface roughness decreasing from 0.3 to 0.1 nm. Therefore, a room-temperature electrically injected 480 nm InGaN-based cyan LD grown on Si under pulsed current operation was successfully achieved with a threshold current density of 18.3 kA/cm2.

Transfer-printed, tandem microscale light-emitting diodes for full-color displays.

Inorganic semiconductor-based microscale light-emitting diodes (micro-LEDs) have been widely considered the key solution to next-generation, ubiquitous lighting and display systems, with their efficiency, brightness, contrast, stability, and dynamic response superior to liquid crystal or organic-based counterparts. However, the reduction of micro-LED sizes leads to the deteriorated device performance and increased difficulties in manufacturing. Here, we report a tandem device scheme based on stacked red, green, and blue (RGB) micro-LEDs, for the realization of full-color lighting and displays. Thin-film micro-LEDs (size ∼100 µm, thickness ∼5 µm) based on III-V compound semiconductors are vertically assembled via epitaxial liftoff and transfer printing. A thin-film dielectric-based optical filter serves as a wavelength-selective interface for performance enhancement. Furthermore, we prototype arrays of tandem RGB micro-LEDs and demonstrate display capabilities. These materials and device strategies provide a viable path to advanced lighting and display systems.

Design of double-lattice GaN-PCSEL based on triangular and circular holes.

We have theoretically designed a double-lattice photonic crystal surface-emitting laser (PCSEL) based on triangular and circular holes. In the design, porous-GaN which has the properties of lower refractive index and high quality stress-free homo-epitaxy with GaN, was first proposed to be the cladding layer for GaN-PCSEL. The finite difference-time domain (FDTD), the plane wave expansion (PWE), and the rigorous coupled-wave analysis (RCWA) method were employed in the investigation. Our simulations achieved a radiation constant of up to 50 cm-1 and a slope efficiency of more than 1 W/A while maintaining a low threshold gain. We conducted a systematic study on the effects of the filling factor, etching depth, and holes shift, on the performance of the PCSEL. The findings indicate that increasing the filling factor improves the radiation constant and slope efficiency. Asymmetric hole patterns and varying etching depths have a similar effect. The introduction of asymmetric patterns and a double lattice in the photonic crystal breaks the symmetry of electric fields in the plane, while different etching depths of the two holes break the symmetry in the vertical direction. Additionally, altering the shift of the double lattice modifies the optical feedback in the resonators, resulting in variations of cavity loss and confinement factor.

Performance improvement of GaN-based microdisk lasers by using a PEALD-SiO2 passivation layer.

Dry-etching is often utilized to shape GaN-based materials. However, it inevitably causes plenty of sidewall defects as non-radiative recombination centers and charge traps that deteriorate GaN-based device performance. In this study, the effects of dielectric films deposited by plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) on GaN-based microdisk laser performance were both investigated. The results demonstrated that the PEALD-SiO2 passivation layer largely reduced the trap-state density and increased the non-radiative recombination lifetime, thus leading to the significantly decreased threshold current, notably enhanced luminescence efficiency and smaller size dependence of GaN-based microdisk lasers as compared with the PECVD-Si3N4 passivation layer.

Electrically injected GaN-on-Si blue microdisk laser diodes.

III-nitride blue microdisk laser diodes are highly desirable in emerging applications, such as augmented reality, virtual reality, and visible light communication. However, the electrically pumped blue microdisk lasers have been lagging for decades owing to weak optical confinement and large internal absorption loss. In this study, the waveguide layers and cladding layers were carefully engineered to enhance the optical confinement and reduce internal absorption loss. Therefore, the first electrically injected blue microdisk laser diodes grown on Si substrates have been successfully fabricated, and exhibited a resistor-capacitance-limited bandwidth of 24.1 GHz, showing highly promising applications in high-speed and large-modulation-bandwidth visible light communication.

Activation of buried p-GaN through nanopipes in large-size GaN-based tunnel junction LEDs.

In GaN-based light-emitting diodes (LEDs), tunnel junctions offer a way of replacing the highly resistive p-type GaN (p-GaN) ohmic contact with a low-resistance n-GaN ohmic contact. However, the p-GaN would be re-passivated by hydrogen atoms during the subsequent growth of n-GaN in a metal-organic chemical vapor deposition (MOCVD) chamber. The n-GaN layer, acting as a hydrogen diffusion barrier, hinders the thermal activation of the underlying p-GaN. Here, we report a method to thermally activate the buried p-GaN in tunnel junction LED (TJ-LED) through vertically aligned nanopipe arrays across the top n-GaN layer, which provides a hydrogen outgassing passage. The fabrication of nanopipes is realized via inductive coupled plasma etching using a mask prepared by self-assembled nanosphere arrays. As a result, we attain large-size TJ-LED chips, exhibiting nearly equivalent p-GaN activation and superior light extraction compared to conventional LEDs. Specifically, the light extraction efficiency is boosted by 44% relative to conventional LEDs at an injection current density of 100 A cm-2.

AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate.

This letter reports the influence of material quality and device processing on the performance of AlGaN-based Schottky barrier deep ultraviolet photodetectors grown on Si substrates. The thermal annealing can significantly improve Schottky barrier height and wet chemical etching can effectively remove etching damage. Meanwhile, the decrease of threading dislocation density and the pit size, especially the later, can substantially suppress reverse leakage. As a result, the reverse leakage current density of the as-fabricated deep UV photodetector was reduced down to 3×10-8 A/cm2. Furthermore, the responsivity of the deep UV photodetectors was greatly improved by reducing the point defect concentration.

Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Very limited 1-3 pairs of quantum-wells (QWs) are preferred for GaN-based laser diodes (LDs), which require more careful engineering of the carrier transport than LEDs. In this work, the first-barrier doping level of QWs is found to significantly affect the carrier confinement and distribution for GaN-based LDs. The first-barrier doping exceeding 2×1018 cm-3 will make the bottom QW return to the parasitic state, yielding unexpected photons absorption and even Auger recombination. The underlying physical mechanism is discussed in terms of the calculated energy-band diagram, carrier confinement, and distribution. And all the experimental findings are consistent with the physical model.

Continuous-wave electrically injected GaN-on-Si microdisk laser diodes.

Silicon photonics has been calling for an electrically pumped on-chip light source at room temperature for decades. A GaN-based microdisk laser diode with whispering gallery modes grown on Si is a promising candidate for compact on-chip light source. By suppressing the unintentional incorporation of carbon impurity in the p-type AlGaN cladding layer of the laser, we have significantly reduced the operation voltage and threshold current of the GaN-on-Si microdisk laser. Meanwhile the radius of the microdisk laser was shrunk to 8 µm to lower the thermal power. The overall junction temperature of the microdisk laser was effectively reduced. As a result, the first continuous-wave electrically pumped InGaN-based microdisk laser grown on Si was achieved at room temperature.

Performance improvement of InGaN-based laser grown on Si by suppressing point defects.

High performance InGaN-based laser diodes (LDs) monolithically grown on Si is fundamentally interesting and highly desirable for photonics integration on Si platform. Suppression of point defects is of crucial importance to improve the device performance of InGaN-based LDs grown on Si. This work presents a detailed study on the impact of point defects, such as carbon (C) impurities and gallium vacancies (VGa), on the device characteristics of InGaN-based LDs grown on Si. By suppressing the VGa-related defect within the waveguide layers, reducing the thermal degradation of InGaN-based quantum wells, and controlling the C impurity concentrations within the thick p-type cladding layers, the as-fabricated InGaN-based LDs grown on Si exhibited a significantly reduced threshold current density of 2.25 kA/cm2 and an operation voltage of 4.7 V.

Fabrication of AlGaN nanostructures by nanolithography on ultraviolet LEDs grown on Si substrates.

AlGaN nanostructures have many applications because of their interesting and unique properties. Here we report a simple fabrication method of AlGaN nanostructures by nanolithography on ultraviolet (UV) LEDs grown on Si substrates. We also studied the effects of various AlGaN nanostructure arrays on the performance of the UV (370 nm) thin-film LEDs with an embedded n-type contact. The output power of the UV LEDs with nanostructures was enhanced by 3.9 times compared to the flat UV LEDs, while no penalty was induced for the electrical characteristics of the UV LEDs. Additionally, the far-field radiation pattern of the UV LEDs with nanostructures showed much better directionality and a much stronger intensity than the flat UV LEDs, which would be of great benefit to directional UV curing applications.

Room-temperature electrically pumped InGaN-based microdisk laser grown on Si.

Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature.

ZnO nanoparticles impair autophagic flux and cell viability through the TRIM16-NRF2-p62 pathway in inflammatory keratinocytes.

PURPOSE: Zinc oxide nanoparticles (ZnO NPs) are widely used in sunscreen, cosmetics, and topical drugs. Most previous studies have confirmed the safety of ZnO NPs applied to normal skin; however, little is known about the safety and potential toxicity of ZnO NPs applied to inflamed skin. This study aimed to evaluate the exposure risk of ZnO NPs in the treatment of inflammatory skin diseases. METHODS: Normal human and tumor necrosis factor-α (TNF-α)-induced inflammatory keratinocytes were incubated with ZnO NPs to assess their toxic effects on cell viability and autophagy signaling pathway. Tandem mass tag (TMT)-based proteomics analysis was used to identify differentially expressed proteins following incubation of inflammatory keratinocytes with ZnO NPs. Protein expression was assessed by Western blot, and double fluorescent labeling and siRNA-knockdown further elucidated the role of the TRIM16-NRF2-p62 pathway in mediating the effects of ZnO NP. RESULTS: In TNF-α-induced inflammatory keratinocytes, ZnO NPs activated cytoprotective autophagy and mediated p62-related autophagic flux block, thereby reducing the viability of inflammatory keratinocytes. Additionally, TRIM16-NRF2 was essential in ZnO NP-mediated autophagy flux block and cell viability reduction in inflammatory keratinocytes. Inhibition of the TRIM16-NRF2 pathway reduced p62 levels, alleviated autophagy flux blockade, and slightly restored the viability of inflammatory keratinocytes. CONCLUSION: ZnO NPs activated protective cell autophagy. Blockade of autophagy flux mediated by the TRIM16-NRF2-p62 pathway led to decreased cell viability. This study provided a deeper understanding of the toxicity mechanism of ZnO NPs in inflammatory keratinocytes.

Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs.

Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks have been studied in detail. It was found that the early degradation of UVC LEDs is primarily caused by electron leakage. The prominent contribution of the hillock edges to the electron leakage is unambiguously evidenced by the transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities, including C, O, and Si, at the hillock edges are clearly observed, which facilitate the trap-assisted carrier tunneling in the multiple quantum wells and subsequent recombination in the p-AlGaN. This work sheds light on one possible degradation mechanism of AlGaN-based UVC LEDs.

Adalimumab in Treating Refractory Livedoid Vasculopathy.

Livedoid vasculopathy is a chronic, recurrent skin disorder. It seriously affects the quality of patients' life. However, the pathogenesis has not been fully identified yet. Here, this retrospective study describes the successful use of anti-TNF-α agent adalimumab in three cases of refractory livedoid vasculopathy, which has not been reported previously. In addition, we provide some clinical evidence that adalimumab therapy is efficient in improving skin lesions and relieving the pain of livedoid vasculopathy.

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si.

GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 µm × 5 µm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings.

This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection.

Physical and chemical technologies have been continuously progressing advances in neuroscience research. The development of research tools for closed-loop control and monitoring neural activities in behaving animals is highly desirable. In this paper, we introduce a wirelessly operated, miniaturized microprobe system for optical interrogation and neurochemical sensing in the deep brain. Via epitaxial liftoff and transfer printing, microscale light-emitting diodes (micro-LEDs) as light sources and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-coated diamond films as electrochemical sensors are vertically assembled to form implantable optoelectrochemical probes for real-time optogenetic stimulation and dopamine detection capabilities. A customized, lightweight circuit module is employed for untethered, remote signal control, and data acquisition. After the probe is injected into the ventral tegmental area (VTA) of freely behaving mice, in vivo experiments clearly demonstrate the utilities of the multifunctional optoelectrochemical microprobe system for optogenetic interference of place preferences and detection of dopamine release. The presented options for material and device integrations provide a practical route to simultaneous optical control and electrochemical sensing of complex nervous systems.

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si.

Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry-Pérot cavity usually includes facet cleavage, however, that is not compatible with on-chip photonic integration. Etching as an alternative approach holds a great advantage in preparing cavity mirrors with no need of breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have a large roughness and etching damages, which would cause mirror loss due to optical scattering and carrier injection loss because of surface non-radiative recombination. A wet chemical polishing process of GaN sidewall facets formed by dry etching was studied in detail to remove the etching damages and smooth the vertical sidewalls. The wet chemical polishing technique combined with dry etching was successfully applied to the on-wafer fabrication of cavity mirrors, which enabled the realization of room temperature electrically injected InGaN-based laser diodes grown on Si.

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.

Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.1-3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1-xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm2.