RESUMO
Plasmon-assisted lithography of thin transparent polymer films, based on polymer mass-redistribution under plasmon excitation, is presented. The plasmon-supported structures were prepared by thermal annealing of thin Ag films sputtered on glass or glass/graphene substrates. Thin films of polymethylmethacrylate, polystyrene and polylactic acid were then spin-coated on the created plasmon-supported structures. Subsequent laser beam writing, at the wavelength corresponding to the position of plasmon absorption, leads to mass redistribution and patterning of the thin polymer films. The prepared structures were characterized using UV-Vis spectroscopy and confocal and AFM microscopy. The shape of the prepared structures was found to be strongly dependent on the substrate type. The mechanism leading to polymer patterning was examined and attributed to the plasmon-heating. The proposed method makes it possible to create different patterns in polymer films without the need for wet technological stages, powerful light sources or a change in the polymer optical properties.
RESUMO
Black aluminium thin films were prepared by direct current (DC) pulsed magnetron sputtering. The N2 concentration in the Ar-N2 mixture that was used as the deposition atmosphere was varied from 0 to 10%, and its impact on the film growth and optical properties was studied. A strong change in the film growth process was observed as a function of the N2 concentration. At a specific N2 concentration of â¼6%, the Al film growth process favoured the formation of a moth-eye-like antireflective surface. This surface morphology, which was similar to the structure of a cauliflower, is known to trap incident light, resulting in films with a very low reflectivity. A diffuse reflectivity lower than 4% was reached in the ultraviolet-visible-near infrared (UV-VIS-NIR) spectral range that corresponds to a value observed for an ultrahigh absorber. We found that for the preparation of black aluminium, the nitrogen content plays an important role in film formation and the resulting film morphology.
RESUMO
One of the biggest challenges in the field of organic electronics is the creation of flexible, stretchable, and biofavorable materials. Here the simple and repeatable method for reversible writing/erasing of arbitrary conductive pattern in conductive polymer thin film is proposed. The copolymer azo-modified poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was synthesized to achieve reversible photo-induced local electrical switching in the insulator-semimetal range. The photoisomerization of the polymer was induced by grafting nitrobenzenediazonium tosylate to the PSS main chains. While the as-deposited PEDOT:PSS thin films showed good conductivity, the modification procedure generated polymer redistribution, resulting in an island-like PEDOT distribution and the loss of conductivity. Further local illumination (430 nm) led to the azo-isomerization redistribution of the polymer chains and the creation of a conductive pattern in the insulating polymer film. The created pattern could then be erased by illumination at a second wavelength (470 nm), which was attributed to induction of reverse azo-isomerization. In this way, the reversible writing/erasing of arbitrary conductive patterns in thin polymer films was realized.