Luminescence Properties of Al2O3:Ti in the Blue and Red Regions: A Combined Theoretical and Experimental Study.

Using jointly experimental results and first-principles calculations, we unambiguously assign the underlying mechanisms behind two commonly observed luminescence bands for the Al2O3 material. Indeed, we show that the red band is associated with a Ti3+ d-d transition as expected, while the blue band is the combination of the Ti3+ + O- → Ti4+ + O2- and VO•+e- → VO× de-excitation processes. Thanks to our recent developments, which take into account the vibrational contributions to the electronic transitions in solids, we were able to simulate the luminescence spectra for the different signatures. The excellent agreement with the experiment demonstrates that it should be possible to predict the color of the material with a CIE chromaticity diagram. We also anticipated the luminescence signature of Al2O3:Ti,Ca and Al2O3:Ti,Be that were confirmed by experiment.

Revisiting the Crystal Structure of Layered Oxychalcogenides Ln2O2S2 (Ln = La, Pr, and Nd).

La2O2S2 was recently used as a precursor to prepare either a new metastable form of La2O2S by de-insertion of half of sulfur atoms of (S2) dimers or quaternary compounds by insertion of a coinage metal (e.g., La2O2Cu2S2). A strong structural relationship exists between the polysulfide precursor and the synthesized products, which highlights the topochemical nature of these reactions. Nevertheless, the crystal structure of the precursor material is still a matter of debate. Namely, several structural models were reported so far in the literature with different space groups and/or crystal systems. All these models were built upon infinite [Ln2O2] slabs separated from each other by a flat sulfur layer of (S2) dumbbells. Nevertheless, all (S2) dimers within a given sulfur layer may rotate in phase by 90° compared to the ideal model that induces an overall atomic disorder in (S2) dimer orientation along the stacking axis. This leads to some imbroglio and much confusion in the description of structural arrangement of Ln2O2S2 materials. Herein, the crystal structures of La2O2S2 and its Pr and Nd variants are revisited. We propose an alternative model that reconciles pre-existing structural descriptions of Ln2O2S2 (Ln = La, Pr, and Nd) materials and highlights the strong dependency of the degree of long-range ordering of the sulfur layers on the synthesis conditions.

First-principles calculations to identify key native point defects in Sr4Al14O25.

This article reports for the first time an in-depth ab initio computational study on intrinsic point defects in Sr4Al14O25 that serves as host lattice for numerous phosphors. Defect Formation Enthalpies (DFEs) and defect concentrations were computed considering the supercell approach for different oxygen atmospheres. The charge transition levels have been determined for several point defects in their thermodynamically stable state and their impact on the electronic structure of the ideal unfaulted material is discussed. Our simulations demonstrated that the formation of most of native point defects is energy intensive under oxygen-rich, -intermediate or -poor synthesis conditions, except for the oxygen vacancies under O-poor atmosphere.

In Honor of John Bannister Goodenough, an Outstanding Visionary.

John B [...].

Origin of Luminescence in La2MoO6 and La2Mo2O9 and Their Bi-Doped Variants.

In this article, lanthanum molybdenum oxides (La2MoO6 and La2Mo2O9) and their Bi-doped derivatives were investigated as potential rare-earth-free phosphors. An X-ray diffraction analysis coupled with an EDX study confirmed the purity of the samples and the insertion of bismuth in a 1 molar % amount. Kubelka-Munk-transformed reflectance spectra clearly indicated that the insertion of Bi induces a shortening of the optical gap in La2MoO6 but has no impact on that of La2Mo2O9. Moreover, excitation and emission spectra evidenced a strong temperature quenching effect in all materials. Also, the CIEx,y parameters at 77 K are almost identical with or without Bi doping for the two host lattices. Clearly, it was shown, by combining experimental data, ab initio calculations, and the empirical positioning of absorption bands that the luminescence of the Bi-doped La2MoO6 sample is mainly related to the host lattice itself and distortions induced by La/Bi substitution. The role of the Bi3+ dopant is indirect, and the luminescence is mainly due to a Mo-O charge transfer rather than an on-site Bi3+ 3P1,0 → 1S0 transition. Concerning La2Mo2O9, there is no effect following the insertion of Bi, implying that the role of Bi is insignificant.

Layered Quaternary Compounds in the Cu2S-In2S3-Ga2S3 system.

Several new materials with four structure-types (e.g., Cu0.32In1.74Ga0.84S4 (CIGS4), Cu0.65In1.75Ga1.4S5 (CIGS5), Cu1.44In2.77Ga0.76S6 (CIGS6), and Cu1.1In2.49Ga1.8S7 (CIGS7)) have been evidenced in the Cu2S-In2S3-Ga2S3 pseudo-ternary system. All of them present a 2D structure built upon infinite 2/∞[InS2] layers ((InS6) octahedra sharing edges) on which condense on both sides mono-, bi-, or tri-2/∞[MS] layers ((MS4) tetrahedra (M = Cu, In, Ga) sharing corners). (M(Td))n-2(In(Oh))Sn slabs are separated from each other by a van der Waals gap, and subscript n refers to the number of sulfur layers within the building block. These compounds have the propensity to display stacking faults but also polymorphic forms. Their optical gap (ca. 1.7 eV) is quite similar to the one of the Cu(In0.7Ga0.3)S2 chalcopyrite absorbers used in tandem solar cells, and the major charge carriers are holes. This suggests that they might be very attractive for photovoltaic applications in thin film devices but also for photocatalysis.

Optoelectronic Properties of TiS2: A Never Ended Story Tackled by Density Functional Theory and Many-Body Methods.

Herein is reported a thorough computational investigation on the bulk TiS2 material with the CdI2 structure type and the ideal 1:2 Ti:S stoichiometry. Computations were performed using some of the most refined models, e.g., a hybrid functional together with dispersion effects (Grimme's), the GW ansatz, and the Bethe-Salpether equation for the optical properties. We showed that switching from Perdew-Berke-Enzerhof (PBE) to PBE0 leads to a gap opening. Moreover, our results demonstrate unambiguously that van der Waals interactions must be properly treated with dispersion effects in order to retrieve the experimental crystal structure and the appropriate c/ a ratio. Indeed, the calculations prove that when one uses a highly accurate computational protocol, the bulk hexagonal TiS2 is a semiconductor with a small gap, whereas using the generalized gradient approximation (GGA) PBE functional leads to a semimetal. Furthermore, the band structure is significantly modified when dispersion parameters are taken into account. Pressure effects were also investigated, and they fully describe the previously simulated electronic transition behavior of the material, e.g., TiS2 becomes semimetallic under strain.

Impact of Nanostructuration on the Chemical Composition of Nickel Oxide Nanoparticles.

Reduction of the size of a particle down to a few tens of nanometers or below may drastically affect its physical properties. That is well-known for quantum dots. Conversely, many works consider the chemical composition of nanoparticles as invariant upon reduction of their dimension. Here we demonstrate that the chemical composition of a transition-metal oxide, namely, nickel oxide, is drastically affected by its nanostructuration.

PyDEF 2.0: An Easy to Use Post-treatment Software for Publishable Charts Featuring a Graphical User Interface.

Herein we present an open-source program automating the post-treatment of solid-state ab initio calculations performed with VASP, the most used solid-state simulation package. The program plots Density of States (DOS) and Band Diagrams, enabling the user to conduct efficiently a detailed study of electronic properties of a material. Our tool includes a complete module dedicated to point defects studies, proposing various corrections which can be activated at will and innovative property calculations such as defect concentrations. This is the first program of its kind to offer a direct plot of the stability domain of the studied matrix with respect to its components' chemical potentials. We also implemented the retrieval of optical indices ɛ1 and ɛ2 , the computation of the refractive and extinction coefficients (n, k) and the reflexivity R of the material. All features of the piece of software are available through a thoroughly designed user-friendly, elegant and efficient Graphical User Interface (GUI) to be accessible to material scientists with various expertises, from both the experimental and theoretical sides. All figures are of publishable quality and can be customized as desired. © 2018 Wiley Periodicals, Inc.

Luminescence and Location of Gd3+ or Tb3+ Ions in Perovskite-Type LaScO3.

The luminescence properties of Gd3+ or Tb3+ ions at La and Sc sites were investigated in LaScO3 with a distorted perovskite-type structure (ABO3). Although the luminescence of lanthanide ions located at B sites is not common and has not been examined in detail, Gd3+ or Tb3+ luminescence from B sites and A sites is clearly observed in Gd3+- or Tb3+-doped LaScO3. The differences in the luminescence characteristics concern peak positions, peak shapes, and decay time, which are all influenced by the crystal field and the site symmetry. The UV luminescence of Gd3+ at B sites shows a red shift compared to Gd3+ at A sites, and the green luminescence of Tb3+ at B sites contrasts with the blue-violet and green luminescence of Tb3+ at A sites. The decay time of the luminescence from B sites is systematically longer than that from A sites in both the Gd3+ and Tb3+ cases.

Crystal Chemistry, Optical-Electronic Properties, and Electronic Structure of Cd1- xIn2+2 x/3S4 Compounds (0 ≤ x ≤ 1), Potential Buffer in CIGS-Based Thin-Film Solar Cells.

CdIn2S4 and In2S3 compounds were both previously studied as buffer layers in CIGS-based thin-film solar cells, each of them exhibiting advantages and disadvantages. Thus, we naturally embarked on the study of the CdIn2S4-In2S3 system, and a series of Cd1- xIn2+2 x/3S4 (0 ≤ x ≤ 1) materials were prepared and characterized. Our results show that two solid solutions exist. The aliovalent substitution of cadmium(II) by indium(III) induces a structural transition at x ≈ 0.7 from cubic spinel Fd3̅ m to tetragonal spinel I41/ amd that is related to an ordering of cadmium vacancies. Despite this transition, the variation of optical gap is continuous and decreases from 2.34 to 2.11 eV going from CdIn2S4 to In2S3 while all compounds retain an n-type behavior. In contrast with the Al xIn2-xS3 solid solution, no saturation of the gap is observed. Moreover, XPS analyses indicate a difference between surface and volume composition of the grains for Cd-poor compounds. The use of Cd1- xIn2+2 x/3S4 compounds could be a good alternative to CdIn2S4 and In2S3 to improve CIGS/buffer interfaces with a compromise between photovoltaic conversion efficiency and cadmium content.

A Topochemical Approach to Synthesize Layered Materials Based on the Redox Reactivity of Anionic Chalcogen Dimers.

Layered transition metal compounds represent a major playground to explore unconventional electric or magnetic properties. In that framework, topochemical approaches that mostly preserve the topology of layered reactants have been intensively investigated to tune properties and/or design new materials. Topochemical reactions often involve the insertion or deinsertion of a chemical element accompanied by a change of oxidation state of the cations only. Conversely, cases where anions play the role of redox centers are very scarce. Here we show that the insertion of copper into two dimensional precursors containing chalcogen dimers (Q2 )2- (Q=S, Se) can produce layered materials with extended (CuQ) sheets. The reality of this topochemical reaction is demonstrated here for different pristine materials, namely La2 O2 S2 , Ba2 F2 S2 , and LaSe2 . Therefore, this work opens up a new synthetic strategy to design layered transition metal compounds from precursors containing polyanionic redox centers.

Fine-Tuning the Properties of Doped Multifunctional Materials by Controlled Reduction of Dopants.

The physical properties of doped multifunctional compounds are commonly tuned by controlling the amount of dopants, but this control is limited because all the properties are influenced simultaneously by this single parameter. Here, we present a strategy that enables the fine-tuning of a specific combination of properties by controlling the reduction of dopants. The feasibility of this approach was demonstrated by optimizing the near-IR photoluminescence of strontium titanate SrTiO3 :Ni for potential applications in biomedicine for a range of absorbance in the visible/near-IR region. We discussed how material properties, such as luminescence, conductivity, or photocatalytic properties can be designed by carefully controlling the ratio of dopants in different oxidation states.

A p-Type Zinc-Based Metal-Organic Framework.

An original concept for the property tuning of semiconductors is demonstrated by the synthesis of a p-type zinc oxide (ZnO)-like metal-organic framework (MOF), (ZnC2O3H2)n, which can be regarded as a possible alternative for ZnO, a natural n-type semiconductor. When small oxygen-rich organic linkers are introduced to the Zn-O system, oxygen vacancies and a deep valence-band maximum, the two obstacles for generating p-type behavior in ZnO, are restrained and raised, respectively. Further studies of this material on the doping and photoluminescence behaviors confirm its resemblance to metal oxides (MOs). This result answers the challenges of generating p-type behavior in an n-type-like system. This concept reveals that a new category of hybrid materials, with an embedded continuous metal-oxygen network, lies between the MOs and MOFs. It provides concrete support for the development of p-type hybrid semiconductors in the near future and, more importantly, the enrichment of tuning possibilities in inorganic semiconductors.

Experimental and Theoretical Evidences of p-Type Conductivity in Nickel Carbodiimide Nanoparticles with a Delafossite Structure Type.

Nickel carbodiimide (NiCN2) was synthesized using a two-step precipitation-decomposition route leading to a brown powder with gypsum-flower-like morphology and a large specific surface area (75 m2/g). This layered material crystallizes in the 2H structure type of delafossite (space group P63/mmc), which is built upon infinite 2/∞[NiN2] layers connected by linear carbodiimide ([N═C═N]2-) bridges. An X-ray diffraction Rietveld refinement and thermal analyses pointed out some nickel deficiencies in the material, and band structure calculations carried out on the defect compound predicted p-type conductivity in relation to a slight amount of N2-. This p-type conductivity was demonstrated by electrochemical impedance spectroscopy measurements, and a flat band potential of 0.90 V vs SCE at pH 9.4 was measured. This value, which is more positive than those of CuGaO2 and CuCrO2 delafossite oxides and NiO, prompted us to test NiCN2 nanoparticles as a photocathode in p-type dye-sensitized solar cells.

Synthesis and Photoluminescence Properties of Ca2Ga2SiO7:Eu(3+) Red Phosphors with an Intense (5)D0 → (7)F4 Transition.

Novel melilite-type Ca2Ga2SiO7:Eu(3+) red-emitting phosphors with different Eu(3+) contents were synthesized via high-temperature solid-state reaction. The crystal structure, optical absorption, and photoluminescence properties were investigated, while density functional theory calculations were performed on the host lattice. The excitation spectra indicate that phosphors can be effectively excited by near-UV light for a potential application in white-light-emitting diodes. Because of the abnormally high intensity emission at about 700 nm arising from the (5)D0 → (7)F4 transition of Eu(3+), the phosphors Ca2Ga2SiO7:Eu(3+) show a deep-red emission with chromaticity coordinates (0.639, 0.358).

Modulation of Defects in Semiconductors by Facile and Controllable Reduction: The Case of p-type CuCrO2 Nanoparticles.

Optical and electrical characteristics of solid materials are well-known to be intimately related to the presence of intrinsic or extrinsic defects. Hence, the control of defects in semiconductors is of great importance to achieve specific properties, for example, transparency and conductivity. Herein, a facile and controllable reduction method for modulating the defects is proposed and used for the case of p-type delafossite CuCrO2 nanoparticles. The optical absorption in the infrared region of the CuCrO2 material can then be fine-tuned via the continuous reduction of nonstoichiometric Cu(II), naturally stabilized in small amounts. This reduction modifies the concentration of positive charge carriers in the material, and thus the conductive and reflective properties, as well as the flat band potential. Indeed, this controllable reduction methodology provides a novel strategy to modulate the (opto-) electronic characteristics of semiconductors.

Pair distribution function and density functional theory analyses of hydrogen trapping by γ-MnO2.

In the presence of "Ag2O" as a promoter, γ-MnO2 traps dihydrogen in its (2 × 1) and (1 × 1) tunnels. The course of this reaction was examined by analyzing the X-ray diffraction patterns of the HxMnO2/"Ag2O" system (0 ≤ x < 1) on the basis of pair distribution function and density functional theory (DFT) analyses. Hydrogen trapping occurs preferentially in the (2 × 1) tunnels of γ-MnO2, which is then followed by that in the (1 × 1) tunnels. Our DFT analysis shows that this process is thermodynamically favorable.

The stability domain of the selenide kesterite photovoltaic materials and NMR investigation of the Cu/Zn disorder in Cu2ZnSnSe4 (CZTSe).

Bulk compounds, prepared via the ceramic route, related to Cu2ZnSnSe4 (CZTSe), a material considered for use in photovoltaic devices, were investigated using NMR spectroscopy, electron-probe microanalyses and X-ray diffraction. These materials adopt the kesterite structure regardless of the Cu and Zn contents. It is also shown that the stability domain of the copper-poor quaternary phases is wider for selenide derivatives than for sulphides. Finally, the Cu/Zn disorder level in CZTSe is found to be higher when the samples are quenched, which is reminiscent of the behaviour of the parent sulphide compounds CZTS.

A Chemical Route Towards Single-Phase Materials with Controllable Photoluminescence.

A promising general approach is proposed that enables the controlled reduction of dopants to tune the photoluminescence properties of single-phase materials. The change of oxidation state of dopants in phosphor phases leads to different emission colors that can be finely tuned. This approach was illustrated with the progressive reduction of the red phosphor SrAl2O4:Eu(3+) to green phosphor SrAl2O4:Eu(2+) to target yellow luminescence.