RESUMO
We report on the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates by molecular beam epitaxy. The as-grown nanowires have a density in the order of 10(8) cm(-2), length between 3 and 3.5 µm, and diameter between 60 and 160 nm, depending on the shell growth duration. By applying a range of characterization techniques, we conclude that the In incorporation in the nanowires is on average significantly smaller than what is nominally expected based on two-dimensional growth calibrations and exhibits a gradient along the nanowire axis. On the other hand, the observation of sharp dot-like emission features in the micro-photoluminescence spectra of single nanowires in the 900-1000-nm spectral range highlights the co-existence of In-rich enclosures with In content locally exceeding 30 %.
RESUMO
One of the most common and popular practices on measuring the non-ionising electric and/or magnetic field strength employs field meters and the appropriate electric and/or magnetic field strength sensors. These measurements have to meet several requirements proposed by specific guidelines or standards. On the other hand, performing non-ionising exposure assessment using real measurement data can be a very difficult task due to instrumentation limits and uncertainties. In addition, each measuring technique, practice and recommendation has its own drawbacks. In this paper, a methodology for estimating the overall uncertainty for such measurements, including uncertainty estimation of spatial average values of electric or magnetic field strengths, is proposed. Estimating and reporting measurement uncertainty are of great importance, especially when the measured values are very close to the established limits of human exposure to non-ionising electromagnetic fields.