High-efficiency green light emission from InGaN/GaN using localized surface plasmon resonance tuned by combination of Ag nanoparticles and dielectric thin film.

We achieved significant enhancements in green light emission (550 nm) from InGaN/GaN quantum wells (QWs) by tuning the localized surface plasmon resonance (LSPR) of self-assembled Ag nanoparticles (NPs) through the application of a SiO2 thin film. The LSPR wavelength of Ag NPs was shifted towards shorter wavelengths by 80 nm using a 5 nm SiO2 layer to separate Ag NPs from GaN surface, thereby aligning it effectively with the green region. This strategic placement of Ag NPs and a 5 nm SiO2 film resulted in significant enhancements of photoluminescence (PL) by 15- and 8.8-fold with 5 and 11 nm GaN cap layers, respectively. The LSPR of Ag NPs on a SiO2 thin film facilitated a longer possible distance for the coupling between surface plasmons (SPs) and excitons in a QW. Traditionally, the distance between SPs-generating metal and a QW has been maintained at 10 nm to achieve substantial enhancements. Remarkably, even with a 25 nm cap layer, Ag NPs on a 5 nm SiO2 film boosted PL by 3.1-fold. The enhancements attributable to Ag NPs on SiO2 films were superior, reaching up to 4.8 times greater than those of Ag NPs on GaN surfaces. Additionally, the PL enhancement factors calculated using the finite differential time domain (FDTD) method aligned closely with experimental results.

DUV coherent light emission from ultracompact microcavity wavelength conversion device.

A unique design of our ultracompact microcavity wavelength conversion device exploits the simple principle that the wavelength conversion efficiency is proportional to the square of the electric field amplitude of enhanced pump light in the microcavity, and expands the range of suitable device materials to include crystals that do not exhibit birefringence or ferroelectricity. Here, as a first step toward practical applications of all-solid-state ultracompact deep-ultraviolet coherent light sources, we adopted a low-birefringence paraelectric SrB4O7 crystal with great potential for wavelength conversion and high transparency down to 130 nm as our device material, and demonstrated 234 nm deep-ultraviolet coherent light generation, whose wavelength band is expected to be used for on-demand disinfection tools that can irradiate the human body.

Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy.

To elucidate the microscopic origin of the thermal droop, a blue-emitting indium gallium nitride (InGaN) quantum well grown on epitaxially laterally overgrown gallium nitride was investigated using temperature-dependent microphotoluminescence spectroscopy. Below 300 K, the sample exhibited a well-known dislocation-tolerant luminescence behavior. However, as temperature increases from 300 K to 500 K, the near band-edge emission at the wing region (with lower threading dislocation densities) was stronger than that at the seed region (with higher threading dislocation densities), indicating that threading dislocations are the microscopic origin of the thermal droop. Considering the carrier diffusion length, edge-type threading dislocations should play a major role in the thermal droop of heteroepitaxially grown InGaN-based LEDs.

Grain size dependence of surface plasmon enhanced photoluminescence.

Photoluminescence (PL) in the InGaN quantum well based light-emitting diodes (LED) is greatly mediated through the coupling with the Surface Plasmons (SPs) at the interface of the sputtered Ag film. SPs coupled PL is independently tuned through controlling the grain size of the sputtered Ag films. The grain size of ~50 nm exhibits the maximum light extraction efficiency (LEE) at the wavelength of 460 nm. This grain size agrees with the periodic lattice constant of the grating structure in the calculation, where the momentum mismatch between the SPs and the radiative light can be compensated.

In plane manipulation of a dielectric nanobeam with gradient optical forces.

In this paper we investigate the optical forces induced by localized optical modes propagating along three parallel waveguides, of which only the central one is free to move. In this configuration, when all three waveguides are identical, the components of the optical-force acting on the free beam are decoupled along the axis of symmetry. As a result, two dimensional optomechanical control of the central waveguide, like single-mode optical trapping, can be achieved. We also study non symmetric configurations, that can be used, for example, to tailor the position of the optical trap. Unlike other techniques that rely on buckling, multi-mode excitation or radiation-pressure, single-mode optomechanical-operation should help the realization of faster and simpler on-chip positioning of a single nanobeam since most of the parameters involved can be controlled with great precision.

Flexible topographical design of light-emitting diodes realizing electrically controllable multi-wavelength spectra.

Multi-wavelength visible light emitters play a crucial role in current solid-state lighting. Although they can be realized by combining semiconductor light-emitting diodes (LEDs) and phosphors or by assembling multiple LED chips with different wavelengths, these design approaches suffer from phosphor-related issues or complex assembly processes. These challenges are significant drawbacks for emerging applications such as visible light communication and micro-LED displays. Herein we present a platform for tailored emission wavelength integration on a single chip utilizing epitaxial growth on flexibly-designed three-dimensional topographies. This approach spontaneously arranges the local emission wavelengths of InGaN-based LED structures through the local In composition variations. As a result, we demonstrate monolithic integration of three different emission colors (violet, blue, and green) on a single chip. Furthermore, we achieve flexible spectral control via independent electrical control of each component. Our integration scheme opens the possibility for tailored spectral control in an arbitrary spectral range through monolithic multi-wavelength LEDs.

Ab-initio design of nanophotonic waveguides for tunable, bidirectional optical forces.

We propose a set of principles to tailor and enhance optical forces between parallel, periodic dielectric waveguides by molding the eigen-mode field distribution via the combined effects of highly symmetric slow light modes and waveguide morphology. The geometries here considered are amenable to standard lithographic techniques and possess strong repulsive and attractive optical forces that can be enhanced via slow-light band edge modes. This new methodology should enable the fabrication of optomechanical devices for applications in sensing, switching and nano-optomechanical systems.

Tailoring repulsive optical forces in nanophotonic waveguides.

We describe a mechanism and propose design strategies to selectively tailor repulsive-gradient-optical forces between parallel, nanophotonic waveguides via morphology augmented by slow-light band-edge modes. We show that at small separation lengths, the repulsive force can be made nearly 2 orders of magnitude larger than that of standard dielectric waveguides with a square cross section. The increased coupling interactions should enable a wider dynamic range of optomechanical functionality for potential applications in sensing, switching, and nanoelectromechanical systems.

Transient memory effect in the photoluminescence of InGaN single quantum wells.

The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect.

Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation.

Among the III-nitride semiconductors, InxGa1-xN is a key material for visible optical devices such as light-emitting diodes (LEDs), laser diodes, and solar cells. Light emission is achieved via electron-hole recombination within the InxGa1-xN layer. When InxGa1-xN-based blue LEDs were first commercialized, the high probability of electron-hole radiative recombination despite the presence of numerous threading dislocations was a mystery. Extensive studies have proposed that carrier localization in nanoscopic potential fluctuations due, for example, to the immiscibility between InN and GaN or random alloy fluctuations is a key mechanism for the high emission efficiency. In actual LED devices, not only nanoscopic potential fluctuations but also microscopic ones exist within the InxGa1-xN quantum well light-emitting layers. Herein we map the synchrotron radiation microbeam X-ray fluorescence of InxGa1-xN blue LEDs at a sub-micron level. To acquire weak signals of In, Ar, which is in the air and has a fluorescent X-ray energy similar to that of In, is evacuated from the sample chamber by He purge. As a result, we successfully visualize the spatial In distribution of InxGa1-xN layer nondestructively and present good agreement with optical properties. Additionally, we demonstrate that unlike nanoscopic fluctuations, microscopic In compositional fluctuations do not necessarily have positive effects on device performance. Appropriately controlling both nanoscopic and microscopic fluctuations at the same time is necessary to achieve supreme device performance.

A polarization-modulation method for the near-field mapping of laterally grown InGaN samples.

Epitaxial Laterally overgrown (ELOG) InGaN materials are investigated using a polarization modulated scanning near-field optical microscope. The authors found that luminescence has spatial inhomogeneities and it is partially polarized. Near-field photoluminescence shows polarization phase fluctuation up to 45 degrees over adjacent domains. These results point toward the existence of asymmetries in carrier confinement due to structural anisotropic strain within the framework of the ELOG structure.

Acoustical nanometre-scale vibrations of live cells detected by a near-field optical setup.

The Scanning Near-field Optical Microscope (SNOM) is able to detect tiny vertical movement on the cell membrane in the range of only 1 nanometer or less, about 3 orders of magnitude better than conventional optical microscopes. Here we show intriguing data of cell membrane nanometer-scale dynamics associated to different phenomena of the cell's The Scanning Near-field Optical Microscope (SNOM) is able to detect tiny vertical movement on the cell membrane in the range of only 1 nanometer or less, about 3 orders of magnitude better than conventional optical microscopes. Here we show intriguing data of cell membrane nanometer-scale dynamics associated to different phenomena of the cell's life, such as cell cycle and cell death, on rat pheochromocytoma line PC12. Working in culture medium with alive and unperturbed samples, we could detect nanometer-sized movements; Fourier components revealed a clear distinct behavior associated to regulation of neurite outgrowth and changes on morphology after necrotic stimulus.

Time-domain models for the performance simulation of semiconductor optical amplifiers.

In this paper, we have implemented and compared two complementary time-domain models that have been widely used for the simulation of SOAs. One of the key differences between them lies in their treatment of the material (gain and refractive index) dispersion. One model named as a spectrum slicing model (SSM) is desirable for the simulation of broadband behaviours of SOAs, but not for the nonlinear effect such as the intermodulation distortion, since the gain dispersion is considered by slicing the entire spontaneous emission spectrum into many stripes. The other model based on effective Bloch equations (EBE's) is capable of dealing with the SOA nonlinear effects with the material dispersion incorporated explicitly through the susceptibility, but can't capture the broadband behaviours. Both of them, however, can readily handle the SOA characteristics such as the fibre-to-fibre gain, noise, and crosstalk. Through a direct comparison between them, we have shown that they are in generally good agreement. A discussion on detailed implementations and each model's salient features is also presented.

Fabrication of an atomic resolution low cost STM-SNOM hybrid probe.

We derived a simple method to fabricate STM-SNOM hybrid probes obtained from commercial cheap communication optical fibers. The tips are fabricated by a methodology that combines two well-known techniques: the selective attack by a buffered solution and the protected layer chemical etching, in a single new one-step technique. The tailored probes are then sputtered by metal and mounted on a STM setup. The usual difficulties of integrating the optical fiber in the STM head are solved originally with a particular home made mount described in details. We will show that the resulting probes reach atomic resolution on both vertical and horizontal scale, and that the optical imaging is free of artifacts and satisfactory with a lateral resolution in the order of lamda/20, as far as we know the finest resolution obtained with a system based on a hybrid fiber probe. We believe that our methodology is very interesting for its simplicity of realization and for the good resolving power in both SNOM and STM modes.

Nano-probing of the membrane dynamics of rat pheochromocytoma by near-field optics.

High-resolution analysis of activities of live cells is limited by the use of non-invasive methods. Apparatuses such as SEM, STM or AFM are not practicable because the necessary treatment or the harsh contact with system probe will disturb or destroy the cell. Optical methods are purely non-invasive, but they are usually diffraction limited and then their resolution is limited to approximately 1 microm. To overcome these restrictions, we introduce here the study of membrane activity of a live cell sample using a Scanning Near-field Optical Microscope (SNOM). A near field optical microscope is able to detect tiny vertical movement on the cell membrane in the range of only 1 nm or less, about 3 orders of magnitude better than conventional optical microscopes. It is a purely non-invasive, non-contact method, so the natural life activity of the sample is unperturbed. In this report, we demonstrated the nanometer-level resolving ability of our SNOM system analyzing cardiomyocytes samples of which membrane movement is known, and then we present new intriguing data of sharp 40 nm cell membrane sudden events on rat pheochromocytoma cell line PC12. All the measurements are carried out in culture medium with alive and unperturbed samples. We believe that this methodology will open a new approach to investigate live samples. The extreme sensitivity of SNOM allows measurements that are not possible with any other method on live biomaterial paving the way for a broad range of novel studies and applications.

Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 µm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

Micromirror arrays to assess luminescent nano-objects.

We propose an array of submicrometer mirrors to assess luminescent nano-objects. Micromirror arrays (MMAs) are fabricated on Si (001) wafers via selectively doping Ga using the focused ion beam technique to form p-type etch stop regions, subsequent anisotropic chemical etching, and Al deposition. MMAs provide two benefits: reflection of luminescence from nano-objects within MMAs toward the Si (001) surface normal and nano-object labeling. The former increases the probability of optics collecting luminescence and is demonstrated by simulations based on the ray-tracing and finite-difference time-domain methods as well as by experiments. The latter enables different measurements to be repeatedly performed on a single nano-object located at a certain micromirror. For example, a single InGaN∕GaN nanocolumn is assessed by scanning electron microscopy and microphotoluminescence spectroscopy.

Index-of-refraction sensors: virtually unlimited sensing power at the critical angle.

In an effort to improve and simplify refractive index sensors, we identified a basic operation mode at the critical angle. Sensitivity to the refractive index is higher than in standard surface plasmon resonance sensors, and we have been able to demonstrate analytically that it is virtually an unbounded value. We describe this approach and submit a complete analytical study demonstrating its unlimited sensing power. To test the approach, we constructed an economical and basic sensor. Despite its simplicity, we demonstrated the discrimination capability to be of the order of 10(-6), as far as we know close to the best sensitivity ever recorded. This detection method is generally applicable to any optical system and may pave the way for the next generation of optical sensing devices.