Correlating Broadband Photoluminescence with Structural Dynamics in Layered Hybrid Halide Perovskites.

The emission of white light from a single material is atypical and is of interest for solid-state lighting applications. Broadband light emission has been observed in some layered perovskite derivatives, A2PbBr4 (A = R-NH3+), and correlates with static structural distortions corresponding to out-of-plane tilting of the lead bromide octahedra. While materials with different organic cations can yield distinct out-of-plane tilts, the underlying origin of the octahedral tilting remains poorly understood. Using high energy resolution (e.g., quasi-elastic) neutron scattering, this contribution details the rotational dynamics of the organic cations in A2PbBr4 materials where A = n-butylammonium (nBA), 1,8-diaminooctammonium (ODA), and 4-aminobutyric acid (GABA). The organic cation dynamics differentiate (nBA)2PbBr4 from (ODA)PbBr4 or (GABA)2PbBr4 in that the larger spatial extent of dynamics of nBA yields a larger effective cation radius. The larger effective volume of the nBA cation in (nBA)2PbBr4 yields a closer to ideal A-site geometry, preventing the out-of-plane tilt and broadband luminescence. In all three compounds, we observe hydrogen dynamics attributed to rotation of the ammonium headgroup and at a time scale faster than the white light photoluminescence studied by time-correlated single photon counting spectroscopy. This supports a previous assignment of the broadband emission as resulting from a single ensemble, such that the emissive excited state experiences many local structures faster than the emissive decay. The findings presented here highlight the role of the organic cation and its dynamics in hybrid organic-inorganic perovskites and white light emission.

Structure and Optical Properties of Layered Perovskite (MA)2PbI2-xBrx(SCN)2 (0 ≤ x < 1.6).

The layered perovskite (MA)2PbI2(SCN)2 (MA = CH3NH3+) is a member of an emerging series of compounds derived from hybrid organic-inorganic perovskites. Here, we successfully synthesized (MA)2PbI2-xBrx(SCN)2 (0 ≤ x < 1.6) by using a solid-state reaction. Despite smaller bromide substitution for iodine, 1% linear expansion along the a axis was observed at x ∼ 0.4 due to a change of the orientation of the SCN- anions. Diffuse reflectance spectra reveal that the optical band gap increases by the bromide substitution, which is supported by the DFT calculations. Curiously, bromine-rich compounds where x ≥ 0.8 are light sensitive, leading to partial decomposition after ∼24 h. This study demonstrates that the layered perovskite (MA)2PbI2(SCN)2 tolerates a wide range of bromide substitution toward tuning the band gap energy.

Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

Copper antimony sulfide (CuSbS2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>104 cm-1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >104 cm-1, as well as a hole concentration of 1015 cm-3. Finally, the ALD-grown CuSbS2 films were paired with ALD-grown TiO2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS2/CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS2 thin films in environmentally benign photovoltaics.

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications.

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure γ-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase consisting of both γ- and α-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS), allow the derivation of a self-consistent reaction mechanism. Finally, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.