Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide.

Extended defects in wide-bandgap semiconductors have been widely investigated using techniques providing either spectroscopic or microscopic information. Nano-Fourier transform infrared spectroscopy (nano-FTIR) is a nondestructive characterization method combining FTIR with nanoscale spatial resolution (∼20 nm) and topographic information. Here, we demonstrate the capability of nano-FTIR for the characterization of extended defects in semiconductors by investigating an in-grown stacking fault (IGSF) present in a 4H-SiC epitaxial layer. We observe a local spectral shift of the mid-infrared near-field response, consistent with the identification of the defect stacking order as 3C-SiC (cubic) from comparative simulations based on the finite dipole model (FDM). This 3C-SiC IGSF contrasts with the more typical 8H-SiC IGSFs reported previously and is exemplary in showing that nanoscale spectroscopy with nano-FTIR can provide new insights into the properties of extended defects, the understanding of which is crucial for mitigating deleterious effects of such defects in alternative semiconductor materials and devices.

Binary Superlattices of Infrared Plasmonic and Excitonic Nanocrystals.

Self-assembled superlattices of nanocrystals offer exceptional control over the coupling between nanocrystals, similar to how solid-state crystals tailor the bonding between atoms. By assembling nanocrystals of different properties (e.g., plasmonic, excitonic, dielectric, or magnetic), we can form a wealth of binary superlattice metamaterials with new functionalities. Here, we introduce infrared plasmonic Cu2-xS nanocrystals to the limited library of materials that have been successfully incorporated into binary superlattices. We are the first to create a variety of binary superlattices with large excitonic (PbS) nanocrystals and small plasmonic (Cu2-xS) nanocrystals, both resonant in the infrared. Then, by controlling the surface chemistry of large Cu2-xS nanocrystals, we produced structurally analogous superlattices of large Cu2-xS and small PbS nanocrystals. Transmission electron microscopy (TEM) and grazing-incidence small-angle X-ray scattering (GISAXS) were used to characterize both types of superlattices. Furthermore, our unique surface modification of the large Cu2-xS nanocrystals also prevented them from chemically quenching the photoluminescence of the PbS nanocrystals, which occurred when the PbS nanocrystals were mixed with unmodified Cu2-xS nanocrystals. These synthetic achievements create a set of binary superlattices that can be used to understand how infrared plasmonic and excitonic nanocrystals couple in a variety of symmetries and stoichiometries.

Evolution of lattice distortions in 4H-SiC wafers with varying doping.

Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diameter wafers. The evolution of these LDs were investigated for three sequential substrates from the same boule, one of which was the substrate reference, and the other two had a 10 µm thick, 1 × 1017 and 4 × 1014 cm-3 n-type doped epitaxial layer. The lattice strain, Δd/d, was highest for the lowest doped wafer due to higher mismatch with the substrate wafer. After epitaxial layer growth, the LPC variation across the wafer increases by a factor of 2, irrespective of doping. The LPC maps indicate presence of a twist in the lattice planes that increases after epitaxial growth. The LPC component has higher influence on wafer shape change, which can reduce device yields. The lattice strain component predominantly affects the glide of basal plane dislocations (BPDs), thereby reducing device reliability. From analysis of peak widths, it was determined that threading dislocations in the top 6 microns of the wafer increase after epitaxial layer growth.