High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy.

The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.

5 Gbps wireless transmission link with an optically pumped uni-traveling carrier photodiode mixer at the receiver.

We report the first demonstration of a uni-traveling carrier photodiode (UTC-PD) used as a 5 Gbps wireless receiver. In this experiment, a 35.1 GHz carrier was electrically modulated with 5 Gbps non-return with zero on-off keying (NRZ-OOK) data and transmitted wirelessly over a distance of 1.3 m. At the receiver, a UTC-PD was used as an optically pumped mixer (OPM) to down-convert the received radio frequency (RF) signal to an intermediate frequency (IF) of 11.7 GHz, before it was down-converted to the baseband using an electronic mixer. The recovered data show a clear eye diagram, and a bit error rate (BER) of less than 10-8 was measured. The conversion loss of the UTC-PD optoelectronic mixer has been measured at 22 dB. The frequency of the local oscillator (LO) used for the UTC-PD is defined by the frequency spacing between the two optical tones, which can be broadly tuneable offering the frequency agility of this photodiode-based receiver.

Resonant terahertz probes for near-field scattering microscopy.

We propose and characterize a scattering probe for terahertz (THz) near-field microscopy, fabricated from indium, where the scattering efficiency is enhanced by the dipolar resonance supported by the indium probe. The scattering properties of the probe were evaluated experimentally using THz time-domain spectroscopy (TDS), and numerically using the finite-difference time-domain (FDTD) method in order to identify resonant enhancement. Numerical measurements show that the indium probes exhibit enhanced scattering across the THz frequency range due to dipolar resonance, with a fractional bandwidth of 0.65 at 1.24 THz. We experimentally observe the resonant enhancement of the scattered field with a peak at 0.3 THz. To enable practical THz microscopy applications of these resonant probes, we also demonstrate a simple excitation scheme utilizing a THz source with radial polarization, which excites a radial mode along the length of the tip. Strong field confinement at the apex of the tip, as required for THz near-field microscopy, was observed experimentally.

Terahertz generation mechanism in nano-grating electrode photomixers on Fe-doped InGaAsP.

We report the generation mechanism associated with nano-grating electrode photomixers fabricated on Fe-doped InGaAsP substrates. Two different emitter designs incorporating nano-gratings coupled to the same broadband antenna were characterized in a continuous-wave terahertz (THz) frequency system employing telecommunications wavelength lasers for generation and coherent detection. The current-voltage characteristics and THz emission bandwidth of the emitters is compared for different bias polarities and optical polarisations. The THz output from the emitters is also mapped as a function of the position of the laser excitation spot for both continuous-wave and pulsed excitation. This mapping, together with full-wave simulations of the structures, confirms the generation mechanism to be due to an enhanced optical electric field at the grating tips resulting in increased optical absorption, coinciding with a concentration of the electrostatic field.

Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes.

We determine the output impedance of uni-travelling carrier (UTC) photodiodes at frequencies up to 400 GHz by performing, for the first time, 3D full-wave modelling of detailed UTC photodiode structures. In addition, we demonstrate the importance of the UTC impedance evaluation, by using it in the prediction of the absolute power radiated by an antenna integrated UTC, over a broad frequency range and confirming the predictions by experimental measurements up to 185 GHz. This is done by means of 3D full-wave modelling and is only possible since the source (UTC) to antenna impedance match is properly taken into account. We also show that, when the UTC-to-antenna coupling efficiency is modelled using the classical junction-capacitance/series-resistance concept, calculated and measured levels of absolute radiated power are in substantial disagreement, and the maximum radiated power is overestimated by a factor of almost 7 dB. The ability to calculate the absolute emitted power correctly enables the radiated power to be maximised through optimisation of the UTC-to-antenna impedance match.

Accurate equivalent circuit model for millimetre-wave UTC photodiodes.

We present a comprehensive study of uni-travelling carrier photodiode impedance and frequency photo-response supported by measurements up to 110 GHz. The results of this investigation provide valuable new information for the optimisation of the coupling efficiency between UTC-PDs and THz antennas. We show that the measured impedance cannot be explained employing the standard junction-capacitance/series-resistance concept and propose a new model for the observed effects, which exhibits good agreement with the experimental data. The achieved knowledge of the photodiode impedance will allow the absolute level of power emitted by antenna integrated UTCs to be predicted and ultimately maximised.

Coherent terahertz photonics.

We present a review of recent developments in THz coherent systems based on photonic local oscillators. We show that such techniques can enable the creation of highly coherent, thus highly sensitive, systems for frequencies ranging from 100 GHz to 5 THz, within an energy efficient integrated platform. We suggest that such systems could enable the THz spectrum to realize its full applications potential. To demonstrate how photonics-enabled THz systems can be realized, we review the performance of key components, show recent demonstrations of integrated platforms, and give examples of applications.

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

Modelling of surface waves on a THz antenna detected by a near-field probe.

We have modelled the experimental system based on the sub-wavelength aperture probe employed in our previous work for terahertz (THz) surface plasmon wave imaging on a bowtie antenna. For the first time we demonstrate the accuracy of the proposed interpretation of the images mapped by the probe. The very good agreement between numerical and experimental results proves that the physical quantity detected by the probe is the spatial derivative of the electric field normal component. The achieved understanding of the near-field probe response allows now a correct interpretation of the images and the distribution of the electric field to be extracted. We have also carried out the first assessment of the probe invasiveness and found that the pattern of the surface plasmon wave on the antenna is not modified significantly by the proximity of the probe. This makes the experimental system an effective tool for near-field imaging of THz antennas and other metallic structures.