High-power deep-ultraviolet light generation at 266†nm from frequency quadrupling of a picosecond pulsed 1064†nm laser with a Nd:YVO4 amplifier pumped by a 914†nm laser diode.

We report the generation of picosecond pulsed light at a 266 nm wavelength with an average power of 53 W. We developed a picosecond pulsed 1064 nm laser source with an average power of 261 W, a repetition rate of 1 MHz, and a pulse duration of 14 ps, using a gain-switched DFB laser diode as a seed laser and a 914 nm laser-diode-pumped Nd-doped YVO4 power amplifier. We achieved stable generation of 266 nm light with an average power of 53 W from frequency quadrupling using an LBO and a CLBO crystals. The amplified power of 261 W and the 266 nm average power of 53 W from the 914 nm pumped Nd:YVO4 amplifier are the highest ever reported, to the best of our knowledge.

Stable 10,000-hour operation of 20-W deep ultraviolet laser generation at 266†nm.

We report 10,000-hour stable operation of a 266-nm picosecond laser with an average power of 20 W. We have developed a narrow-linewidth, high-peak-power 1064-nm laser source with a repetition rate of 600 kHz, an average power of 129 W, a linewidth of 0.15 nm, and a pulse duration of 14 ps using a gain-switched DFB-LD as a picosecond pulse seed source and a four-stage power amplifier with an Nd:YVO4 crystal. A 266-nm laser with a maximum average power of 25.4 W was generated by frequency conversion using LBO and CLBO crystals and had a pulse duration of 8 ps and beam quality factor of 1.5 at 20W. To the best of our knowledge, we also demonstrated that the average power and the beam quality can be maintained for 10,000 hours for the first time. We have confirmed the durability of the developed deep ultraviolet laser for industrial applications.

High-power DUV picosecond pulse laser with a gain-switched-LD-seeded MOPA and large CLBO crystal.

We report the generation of a 266 nm deep ultraviolet (DUV) picosecond pulse with an average output power of 14 W by the fourth-harmonic generation (FHG) from two consecutive frequency-doubling stages of a 1064 nm pulse based on a gain-switched-laser-diode (LD)-seeded hybrid fiber/solid-state master oscillator and power amplifier (MOPA) system. Through the gain-switched operation of a narrow-spectral-linewidth distributed-feedback laser diode and by using a Yb-doped fiber and a two-stage ${\rm Nd}:{{\rm YVO}_4}$Nd:YVO4 solid-state amplifier, we achieved an average power of 46.5 W near the Fourier transform limit for a 13 ps pulse with a repetition rate of 200 kHz. The narrow linewidth pulse characteristics enabled highly efficient frequency conversion, and the efficiency of conversion from 532 to 266 nm was 54%, and from 1064 to 266 nm was 31%. The beam quality factor ${M^2}$M2 of the generated DUV pulse was below 1.2. The highly efficient FHG process resulted in appeasing thermal stress caused by nonlinear absorption in the crystal, and more than 5000 h of continuous operation were achieved without any power down or beam profile degradation.

Picosecond high-power 355-nm UV generation in CsLiB6O10 crystal.

We report third-harmonic generation (THG) at 355 nm in CsLiB6O10 (CLBO) by using sum-frequency mixing process. As a fundamental laser source, we employ a hybrid master oscillator power amplifier (MOPA) system seeded by a gain-switched laser diode (GS-LD) at 1064 nm to produce narrow spectral picosecond pulses. Both CLBO and walk-off compensated prism-coupled CLBO device generate over 30-W output of 355-nm UV lights, which means walk-off effect in CLBO is negligible in the picosecond laser system. The maximum THG conversion efficiency from the fundamental reaches about 48%, which is 1.2 times higher than that of LiB3O5 (LBO). Theoretical THG outputs with CLBO and LBO are numerically calculated in order to verify the validity of these experimental results in detail.