Absolute frequency referencing in the long wave infrared using a quantum cascade laser frequency comb.

Optical frequency combs (OFCs) based on quantum cascade lasers (QCLs) have transformed mid-infrared spectroscopy. However, QCL-OFCs have not yet been exploited to provide a broadband absolute frequency reference. We demonstrate this possibility by performing comb-calibrated spectroscopy at 7.7 µm (1305 cm-1) using a QCL-OFC referenced to a molecular transition. We obtain 1.5·10-10 relative frequency stability (100-s integration time) and 3·10-9 relative frequency accuracy, comparable with state-of-the-art solutions relying on nonlinear frequency conversion. We show that QCL-OFCs can be locked with sub-Hz-level stability to a reference for hours, thus promising their use as metrological tools for the mid-infrared.

Coherently-averaged dual comb spectrometer at 7.7†µm with master and follower quantum cascade lasers.

We demonstrate coherent averaging of the multi-heterodyne beat signal between two quantum cascade laser frequency combs in a master-follower configuration. The two combs are mutually locked by acting on the drive current to control their relative offset frequency and by radio-frequency extraction and injection locking of their intermode beat signal to stabilize their mode spacing difference. By implementing an analog common-noise subtraction scheme, a reduction of the linewidth of all heterodyne beat notes by five orders of magnitude is achieved compared to the free-running lasers. We compare stabilization and post-processing corrections in terms of amplitude noise. While they give similar performances in terms of signal-to-noise ratio, real-time processing of the stabilized signal is less demanding in terms of computational power. Lastly, a proof-of-principle spectroscopic measurement was performed, showing the possibility to reduce the amount of data to be processed by three orders of magnitude, compared to the free-running system.

Extreme ultraviolet light source at a megahertz repetition rate based on high-harmonic generation inside a mode-locked thin-disk laser oscillator.

We demonstrate a compact extreme ultraviolet (XUV) source based on high-harmonic generation (HHG) driven directly inside the cavity of a mode-locked thin-disk laser oscillator. The laser is directly diode-pumped at a power of only 51 W and operates at a wavelength of 1034 nm and a 17.35 MHz repetition rate. We drive HHG in a high-pressure xenon gas jet with an intracavity peak intensity of 2.8×1013 W/cm2 and 320 W of intracavity average power. Despite the high-pressure gas jet, the laser operates at high stability. We detect harmonics up to the 17th order (60.8 nm, 20.4 eV) and estimate a flux of 2.6×108 photons/s for the 11th harmonic (94 nm, 13.2 eV). Due to the power scalability of the thin-disk concept, this class of compact XUV sources has the potential to become a versatile tool for areas such as attosecond science, XUV spectroscopy, and high-resolution imaging.

Frequency comb metrology with an optical parametric oscillator.

We report on the first demonstration of absolute frequency comb metrology with an optical parametric oscillator (OPO) frequency comb. The synchronously-pumped OPO operated in the 1.5-µm spectral region and was referenced to an H-maser atomic clock. Using different techniques, we thoroughly characterized the frequency noise power spectral density (PSD) of the repetition rate frep, of the carrier-envelope offset frequency fCEO, and of an optical comb line νN. The comb mode optical linewidth at 1557 nm was determined to be ~70 kHz for an observation time of 1 s from the measured frequency noise PSD, and was limited by the stability of the microwave frequency standard available for the stabilization of the comb repetition rate. We achieved a tight lock of the carrier envelope offset frequency with only ~300 mrad residual integrated phase noise, which makes its contribution to the optical linewidth negligible. The OPO comb was used to measure the absolute optical frequency of a near-infrared laser whose second-harmonic component was locked to the F = 2→3 transition of the 87Rb D2 line at 780 nm, leading to a measured transition frequency of νRb = 384,228,115,346 ± 16 kHz. We performed the same measurement with a commercial fiber-laser comb operating in the 1.5-µm region. Both the OPO comb and the commercial fiber comb achieved similar performance. The measurement accuracy was limited by interferometric noise in the fibered setup of the Rb-stabilized laser.

Optimized SESAMs for kilowatt-level ultrafast lasers.

We present a thorough investigation of surface deformation and thermal properties of high-damage threshold large-area semiconductor saturable absorber mirrors (SESAMs) designed for kilowatt average power laser oscillators. We compare temperature rise, thermal lensing, and surface deformation of standard SESAM samples and substrate-removed SESAMs contacted using different techniques. We demonstrate that for all cases the thermal effects scale linearly with the absorbed power, but the contacting technique critically affects the strength of the temperature rise and the thermal lens of the SESAMs (i.e. the slope of the linear change). Our best SESAMs are fabricated using a novel substrate-transfer direct bonding technique and show excellent surface flatness (with non-measureable radii of curvature (ROC), compared to astigmatic ROCs of up to 10 m for standard SESAMs), order-of-magnitude improved heat removal, and negligible deformation with absorbed power. This is achieved without altering the saturation behavior or the recovery parameters of the samples. These SESAMs will be a key enabling component for the next generation of kilowatt-level ultrafast oscillators.

10 GHz pulse repetition rate Er:Yb:glass laser modelocked with quantum dot semiconductor saturable absorber mirror.

Semiconductor saturable absorber mirror (SESAM) modelocked high pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers are proven as an enabling technology for high data rate coherent communication systems owing to their low noise and high pulse-to-pulse optical phase-coherence. Compared to quantum well, quantum dot (QD)-based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the first 10 GHz pulse repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting 2 ps pulse width from an Er-doped glass oscillator (ERGO). The 10 GHz ERGO laser is modelocked with InAs/GaAs QD-SESAM with saturation fluence as low as 9 µJ/cm2.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Active linewidth-narrowing of a mid-infrared quantum cascade laser without optical reference.

We report on a technique for frequency noise reduction and linewidth-narrowing of a distributed-feedback mid-IR quantum cascade laser (QCL) that does not involve any optical frequency reference. The voltage fluctuations across the QCL are sensed, amplified and fed back to the temperature of the QCL at a fast rate using a near-IR laser illuminating the top of the QCL chip. A locking bandwidth of 300 kHz and a reduction of the frequency noise power spectral density by a factor of 10 with respect to the free-running laser are achieved. From 2 MHz for the free-running QCL, the linewidth is narrowed below 700 kHz (10 ms observation time).

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach.

Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.

Gain characterization and passive modelocking of electrically pumped VECSELs.

Linear and nonlinear gain characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) is presented with spectrally resolved measurements of the gain and with gain saturation measurements of two EP-VECSEL samples with different field enhancement in the quantum-well gain layers. The spectral bandwidth, small-signal gain and saturation fluence of the devices are compared. Using the sample with the larger bandwidth, we have demonstrated the shortest pulses generated from a passively modelocked EP-VECSEL to date. With a low-saturation-fluence SESAM for passive modelocking we have achieved 9.5-ps pulses with 7.6 mW average output power at a repetition rate of 1.4 GHz. With a higher output coupler transmission the pulse duration was increased to 31 ps with an average output power of 13.6 mW. The pulses were chirped mainly due to the group delay dispersion (GDD) introduced by the intermediate DBR, which compensates the optical loss in the structure.

Effect of the carrier-envelope-offset dynamics on the stabilization of a diode-pumped solid-state frequency comb.

We investigate the dynamics of the carrier-envelope-offset (CEO) frequency, f(CEO), controlled by a pump current on the self-referencing of an optical frequency comb generated from a diode-pumped solid-state laser at 1.56 µm. We observe a reversal point in the tuning of f(CEO) with the pump current. Between the low- and high-frequency region in the dynamic response of f(CEO) to pump current modulation, we observe a significant phase shift of ≈180 deg in the transfer function. As a result, it is impossible to stabilize f(CEO) at a pump current above the reversal point, although the free-running CEO beat at this point has a higher signal-to-noise ratio than underneath the reversal point at which the locking is straightforward. Our results indicate that a high signal-to-noise ratio and a low-noise CEO beat are not sufficient indicators for the feasibility of comb self-referencing in cases for which CEO dynamics play a dominant role.

A Kerr polarization controller.

Kerr-effect-induced changes of the polarization state of light are well known in pulsed laser systems. An example is nonlinear polarization rotation, which is critical to the operation of many types of mode-locked lasers. Here, we demonstrate that the Kerr effect in a high-finesse Fabry-Pérot resonator can be utilized to control the polarization of a continuous wave laser. It is shown that a linearly-polarized input field is converted into a left- or right-circularly-polarized field, controlled via the optical power. The observations are explained by Kerr-nonlinearity induced symmetry breaking, which splits the resonance frequencies of degenerate modes with opposite polarization handedness in an otherwise symmetric resonator. The all-optical polarization control is demonstrated at threshold powers down to 7 mW. The physical principle of such Kerr effect-based polarization controllers is generic to high-Q Kerr-nonlinear resonators and could also be implemented in photonic integrated circuits. Beyond polarization control, the spontaneous symmetry breaking of polarization states could be used for polarization filters or highly sensitive polarization sensors when operating close to the symmetry-breaking point.

Pulse compression of a high-power thin disk laser using rod-type fiber amplifiers.

We report on two pulse compressors for a high-power thin disk laser oscillator using rod-type fiber amplifiers. Both systems are seeded by a standard SESAM modelocked thin disk laser that delivers 16 W of average power at a repetition rate of 10.6 MHz with a pulse energy of 1.5 µJ and a pulse duration of 1 ps. We discuss two results with different fiber parameters with different trade-offs in pulse duration, average power, damage and complexity. The first amplifier setup consists of a Yb-doped fiber amplifier with a 2200 µm2 core area and a length of 55 cm, resulting in a compressed average power of 55 W with 98-fs pulses at a repetition rate of 10.6 MHz. The second system uses a shorter 36-cm fiber with a larger core area of 4500 µm2. In a stretcher-free configuration we obtained 34 W of compressed average power and 65-fs pulses. In both cases peak powers of > 30 MW were demonstrated at several µJ pulse energies. The power scaling limitations due to damage and self-focusing are discussed.

Temporal pulse compression in a xenon-filled Kagome-type hollow-core photonic crystal fiber at high average power.

In this study we demonstrate the suitability of Hollow-Core Photonic Crystal Fibers (HC-PCF) for multiwatt average power pulse compression. We spectrally broadened picosecond pulses from a SESAM mode-locked thin disk laser in a xenon gas filled Kagome-type HC-PCF and compressed these pulses to below 250 fs with a hypocycloid-core fiber and 470 fs with a single cell core defect fiber. The compressed average output power of 7.2 W and 10.2 W at a pulse repetition rate of approximately 10 MHz corresponds to pulse energies of 0.7 µJ and 1 µJ and to peak powers of 1.6 MW and 1.7 MW, respectively. Further optimization of the fiber parameters should enable pulse compression to below 50 fs duration at substantially higher pulse energies.

Continuous-wave and modelocked Yb:YCOB thin disk laser: first demonstration and future prospects.

Yb:YCOB is a very attractive material for femtosecond pulse generation given its broad emission bandwidth. We demonstrate continuous-wave power scaling in the thin disk geometry to the 100-W level with a 40% optical-to-optical efficiency in multi-mode operation. Furthermore, we present initial modelocking results in the thin disk geometry, achieving pulse durations as short as 270 fs. The modelocked average power is, however, limited to less than 5 W because of transverse mode degradation. This is caused by anisotropic thermal aberrations in the 15% Yb-doped thin disks which were 300 to 400 µm thick. This result confirms the potential of Yb:YCOB to generate short femtosecond pulses in the thin disk geometry but also makes clear that significantly thinner disks are required to overcome the thermal limitations for high power operation.

High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser.

Femtosecond Yb:Lu(2)O(3) thin disk laser with 63 W of average power.

We present successful power-scaling of an Yb:Lu(2)O(3) thin disk laser to record high-power levels both in cw and mode-locked operation. In a simple multimode resonator we achieved 149 W of output power in cw operation with 73% optical-to-optical efficiency (eta(opt)). Building an 81 MHz fundamental transverse mode resonator with dispersion compensation and a semiconductor saturable absorber mirror (SESAM) for passive mode locking we achieved 63 W of average power in 535 fs pulses (eta(opt)=35%). The output beam is nearly diffraction limited (M(2)<1.2). The 0.78 microJ pulses with a peak power of 1.28 MW had a central wavelength of 1034 nm and were close to the Fourier transform limit. With an SESAM with a larger modulation depth we obtained pulses as short as 329 fs at 40 W average power corresponding to a pulse energy of 0.49 microJ and a peak power of 1.32 MW.

High precision optical characterization of semiconductor saturable absorber mirrors.

Semiconductor saturable absorber mirrors (SESAMs) have become a key element of many ultrafast laser sources, enabling passively modelocked lasers with >100 GHz repetition rate or with >10 microJ pulse energy. Precise knowledge of the nonlinear optical reflectivity is required to optimize the SESAMs for self-starting passive modelocking at record high repetition rates or pulse energies. In this article, we discuss a new method for wide dynamic range nonlinear reflectivity measurements. We achieve a higher accuracy (<0.05%) with a simpler and more cost-efficient measurement scheme compared with previous measurement systems. The method can easily be implemented for arbitrary wavelength regions and fluence ranges.

Compact Er:Yb:glass-laser-based supercontinuum source for high-resolution optical coherence tomography.

We present a low coherence light source by direct super-continuum generation from a diode-pumped, passively modelocked Er:Yb:glass-laser, which generates 198 fs transform-limited pulses with an average power of 100 mW at a repetition rate of 75 MHz. The pulse train is launched into a dispersion optimized highly nonlinear fiber for spectral broadening. The optical bandwidth spans from 1150 nm to 2400 nm, which is more than one octave. The potential for ultrahigh-resolution optical coherence tomography (OCT) is demonstrated by coherence measurements supporting an axial resolution of 3.5 microm in air.

Growth parameter optimization for fast quantum dot SESAMs.

Semiconductor saturable absorber mirrors (SESAMs) using quantum dot (QD) absorbers exhibit a larger design freedom than standard quantum well absorbers. The additional parameter of the dot density in combination with the field enhancement allows for an independent control of saturation fluence and modulation depth. We present the first detailed study of the effect of QD growth parameters and post growth annealing on the macroscopic optical SESAM parameters, measuring both nonlinear reflectivity and recombination dynamics. We studied a set of self-assembled InAs QD-SESAMs optimized for an operation wavelength around 960 nm with varying dot density and growth temperature. We confirm that the modulation depth is controlled by the dot density. We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs).