Electron-hole plasma Fabry-Perot lasing in a Ga-incorporated ZnO microbelt via Ag nanoparticle deposition.

In this work, individual ZnO via Ga-doped (ZnO:Ga) microbelts with excellent crystallinity and smooth facets can enable the realization of lateral microresonator Fabry-Perot (F-P) microlasers, and the F-P lasing action originates from excitonic state. Interestingly, introducing Ag nanoparticles (AgNPs) deposited on the microbelt can increase F-P lasing characteristics containing a lower threshold and enhanced lasing output. Especially for the large size AgNPs (the diameter d is approximately 200 nm), the lasing features also exhibit a significant redshift of each lasing peak and an observable broadening of the spectral line width with an increase of the excitation fluence. And the remarkable lasing characteristics are belonging to the electron-hole plasma (EHP) luminescence. The behavior and dynamics of the stimulated radiation in an AgNPs@ZnO:Ga microbelt are studied, suggesting the Mott-transition from the excitonic state to EHP state that is responsible for the F-P lasing. These features can be attributed to the working mechanism that the hot electrons created by the large size AgNPs through nonradiative decay can fill the conduction band of nearby ZnO:Ga, leading to a downward shift of the conduction band edge. This novel filling influence can facilitate bandgap renormalization and result in EHP emission. The results provide a comprehensive understanding of the transition between excitonic and EHP states in the stimulated emission process. More importantly, it also can provide new scheme to developing high efficiency and ultra-low threshold microlasing diodes.

Giant moiré trapping of excitons in twisted hBN.

Excitons in van der Waals (vdW) stacking interfaces can be trapped in ordered moiré potential arrays giving rise to the attractive phenomena of quantum optics and bosonic many-body effects. Compared to the prevalent transition metal dichalcogenides (TMDs) systems, due to the wide bandgap and low dielectric constant, excitons in twist-stacked hexagonal boron nitride (hBN) are anticipated trapped in deeper moiré potential, which enhances the strength of interactions. However, constrained by the common low detectivity of weak light-emitting in the deep-ultraviolet (DUV) bands, the moiré excitons in twist-hBN remain elusive. Here, we report that a remarkable DUV emitting band (peak located at ∼260 nm) only emerges at the twisted stacking area of hBN, which is performed by a high collection efficiency and spatially-resolved cathodoluminescence (CL) at room temperature. Significant peak red shifting contrast to defect-bound excitons of bulk hBN indicates the giant trapping effects of moiré potential for excitons. The observation of deeply trapped excitons motivates further studies of bosonic strongly correlation physics based on the twist-hBN system.

High-performance flexible UV photodetector based on self-supporting ZnO nano-networks fabricated by substrate-free chemical vapor deposition.

Self-supporting ZnO nano-networks have been demonstrated by a substrate-free chemical vapor deposition process for the application as flexible ultraviolet (UV) photodetector. The device shows a responsivity of ∼300 mA W-1over a wide wavelength range from 254 to 365 nm and a high UV/visible rejection ratio of more than 104. More interestingly, a short 90%-10% decay time of <0.12 s can be observed in the air atmosphere, and the current can fully recover to its original dark value within 1 s after switching off the light. The quick response speed should be associated with the wire-wire junction barriers and the adsorption/desorption process of oxygen molecules on the oxygen vacancies near the surface of the ZnO. In addition, the photocurrent, the dark current and the response speed of the ZnO nano-networks flexible UV photodetector nearly stay the same under different bending conditions, suggesting the excellent photoelectric stability and repeatability. Such a simple and cheap way for fabricating self-supporting ZnO-based devices has broad application prospects in the fields of flexible and wearable electronic devices.

The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect.

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Oleylamine-assisted and temperature-controlled synthesis of ZnO nanoparticles and their application in encryption.

A temperature-controlled synthesis process for ZnO nanoparticles (NPs) with the assist of oleylamine (OAm) has been demonstrated, and the ZnO NPs show bright fluorescence under ultraviolet illumination. In this process, zinc nitrate was firstly converted to zinc nitrate hydroxide (Zn5(OH)8(NO3)2) sheets with the assist of OAm, then the Zn5(OH)8(NO3)2 was decomposed into fluorescent ZnO NPs by increasing the ambient temperature. Furthermore, information encryption has been realized based on this process. For encryption, the encrypted information cannot be observed, while the encrypted information appears when they are proceeded in the temperature of 120 °C for about one minute. The results shown in this work provide a controllable way for the synthesis of ZnO NPs by adjusting the reaction temperature, and this may inspire wide applications of ZnO in information encryption.

Electrostatic Assembly Guided Synthesis of Highly Luminescent Carbon-Nanodots@BaSO4 Hybrid Phosphors with Improved Stability.

Carbon nanodots (CNDs)@BaSO4 hybrid phosphors are fabricated in an easy and low-cost process by sequentially assembling Ba2+ and SO42- ions onto the surface of carbon nanodots through electrostatic attraction. CNDs act as the nucleus to attract these reactive ions and provide the luminescent centers in the hybrid phosphors. This strategy is versatile for a variety of negatively charged CNDs with different emission colors. The advantage of the resultant hybrid phosphors is that their luminescence exhibits excellent thermal and photostability, as well as remarkable resistance to strong acid/alkali and common organic solvents. These merits allow for the fabrication of CNDs-based light-emitting diodes using the CNDs@BaSO4 hybrid phosphors as a color conversion layer.

Wavelength-Tunable Electroluminescent Light Sources from Individual Ga-Doped ZnO Microwires.

Electrically driven wavelength-tunable light emission from biased individual Ga-doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga-doping concentrations have been synthesized using a one-step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga-doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current-driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting.

Transparent ultraviolet photovoltaic cells.

Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

Black-colored ZnO nanowires with enhanced photocatalytic hydrogen evolution.

Black-colored ZnO nanowires have been prepared in a metal-organic chemical vapor deposition system by employing a relatively low growth temperature and oxygen-deficient conditions. X-ray photoelectron spectroscopy reveals the incorporation of carbon into the nanowires. The photocatalytic hydrogen evolution activity of the black-colored ZnO nanowires is over 2.5 times larger than that of the pristine ZnO nanowires under simulated solar illumination conditions, and the enhanced photocatalytic activity can be attributed to the higher absorption of visible light by the black color and better carrier separation at the ZnO/carbon interface.

Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO.

A larger ratio of conduction-band offset to valence-band offset is the unique character for Mg(x)Zn(1-x)O alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times.

Towards efficient photoinduced charge separation in carbon nanodots and TiO2 composites in the visible region.

In this work, photoinduced charge separation behaviors in non-long-chain-molecule-functionalized carbon nanodots (CDs) with visible intrinsic absorption (CDs-V) and TiO2 composites were investigated. Efficient photoinduced electron injection from CDs-V to TiO2 with a rate of 8.8 × 10(8) s(-1) and efficiency of 91% was achieved in the CDs-V/TiO2 composites. The CDs-V/TiO2 composites exhibited excellent photocatalytic activity under visible light irradiation, superior to pure TiO2 and the CDs with the main absorption band in the ultraviolet region and TiO2 composites, which indicated that visible photoinduced electrons and holes in such CDs-V/TiO2 composites could be effectively separated. The incident photon-to-current conversion efficiency (IPCE) results for the CD-sensitized TiO2 solar cells also agreed with efficient photoinduced charge separation between CDs-V and the TiO2 electrode in the visible range. These results demonstrate that non-long-chain-molecule-functionlized CDs with a visible intrinsic absorption band could be appropriate candidates for photosensitizers and offer a new possibility for the development of a well performing CD-based photovoltaic system.

Graphene induced high-Q hybridized plasmonic whispering gallery mode microcavities.

A novel hybridized plasmonic whispering gallery mode (WGM) microcavities composed of graphene monolayer coated ZnO microrod with hexagonal cross section were proposed that operates in the ultraviolet region. π and π + σ surface plasmon modes in graphene monolayer at 4.7 eV and 14.6 eV can be used to achieve the near field coupling interaction between surface plasmonic modes and the conventional WGM microcavity modes in the ultraviolet band. Significantly, the coupling, happened in the evanescent wave field excited along the interface between ZnO and graphene, can lead to distinct optical field confinement and lasing enhancement experimentally, so as well as WGM lasing characteristics, such as the higher cavity quality factor (Q), narrower linewidth, lasing intensities enhancement. The results could provide a platform to study hybridized plasmonic cavity dynamics, and also provides the building blocks to construct graphene based novel microcavity for high performance ultraviolet laser devices with potential application to optical signal processing, biological monitoring, and so on.

Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping.

We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.

Improved performance of ZnO light-emitting devices by introducing a hole-injection layer.

ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 µW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.

Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures.

Well-aligned ZnO nanowires have been prepared on sapphire substrate, and structural and optical characterizations indicate that the nanowires are of single crystalline and have relatively high luminescent quality. By employing the ZnO nanowires as an active layer, p-Zn0.68Mg0.32O:N/n-ZnO nanowire heterostructure light-emitting devices (LEDs) have been fabricated. The LEDs show pure ultraviolet emission when a forward bias is applied, while the deep-level emission frequently observed in ZnO p-n junctions is almost totally invisible. The devices can work continuously for over 27 h under the injection of a current density of 500 mA/cm2, indicating their good stability.

Tunability of hybridized plasmonic waveguide mediated by surface plasmon polaritons.

Hybrid plasmonic waveguides have achieved rapid advancement in plasmonics, which has given rise to remarkable field enhancement, light harvest, light-transport capabilities, bridging the gap between electronics and photonics by routing and manipulating light at sub-wavelength regions and so on. However, the development of plasmonic waveguides is hindered by lack of devices that can adjust coherent plasmonic fields. In this letter, hybridized planar multilayer insulator metal insulator metal insulator heterostructures are proposed, and it is demonstrated that their unique capabilities can be used to adjust the mode characteristics by means of varying the thickness of the insulator spacer layer inserted between two metal films, such as the shift of the surface plasmon resonance wavelength. This type of hybrid plasmonic waveguides opens up opportunities for the tunability of mode characteristics, adjustment of resonant energy transfer processes, that have a potential for designing novel optical micro/nano resonance cavities.

MgZnO p-n heterostructure light-emitting devices.

MgZnO heterostructure light-emitting devices (LEDs) have been fabricated from p-Mg(0.35)Zn(0.65)O/n-Mg(0.20)Zn(0.80)O structures, and the p-type Mg(0.35)Zn(0.65)O film was realized using a lithium-nitrogen codoping method. Obvious ultraviolet emission peaked at around 355 nm dominates the electroluminescence (EL) spectra of the device at room temperature, which comes from the near-band-edge emission of the n-type Mg(0.20)Zn(0.80)O film. This is the first report on MgZnO heterostructured LEDs and the shortest EL emission ever reported in ZnO-based p-n junction LEDs to the best of our knowledge.

Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films.

Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO (ZnO:P) films were investigated by combining experiment with first-principles calculation. Photoluminescence (PL) spectra show that Mg incorporation increases the amount of V(Zn), which makes more P(Zn)-2V(Zn) complex acceptor formed and background electron density decreased, leading to that MgZnO:P exhibits better p-type conductivity than ZnO:P. The p-type conductivity mainly arises from P(Zn)-2V(Zn) complex acceptor with a shallow acceptor energy of 108 meV. X-ray photoelectron spectroscopy (XPS) spectra reveal that phosphorus has two chemical states of P(Zn)-2V(Zn) complex and isolated P(Zn), with binding energy of P(2p3∕2) of 132.81 and 133.87 eV, respectively. The conversion of isolated P(Zn) to P(Zn)-2V(Zn) complex induced by Mg incorporation is observed in XPS, in agreement with the PL results. First-principles calculations suggest that the formation energy of nMg(Zn)-V(Zn) complex decreases with the increasing Mg content, well supporting the experiments from the PL spectra and XPS measurements.

The ultraviolet laser from individual ZnO microwire with quadrate cross section.

The ZnO microwires with quadrate cross section were synthesized by chemical vapor deposition method. The ultraviolet laser with the Fabry-pérot cavity modes was realized from an individual ZnO microwire. Under the low excitation power densities, the amplified spontaneous emission was observed from the ZnO microwire, while the lasing action was observed under the high excitation power densities. The ZnO microwire exhibited low threshold excitation intensity of 58 kW/cm(2) and quality factor of 485. The characteristics and possible lasing mechanism were investigated in detail.

Enhanced responsivity of photodetectors realized via impact ionization.

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.