Epitaxy of GaN Nanowires on Graphene.

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electroluminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.

Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment.

Core/shell InGaN/GaN nanowire light emitting diodes (LEDs) based on vertically standing single nanowires and nanowire arrays were fabricated and extensively characterized. The emission of single wire LEDs with the same conformal contact geometry as the array device exhibits the same broadening as the array LED electroluminescence, which proves an excellent wire-to-wire homogeneity. The electroluminescence spectra present two peaks corresponding to the m-plane InGaN quantum well (blue emission) and to an In-rich region at the m-plane-semipolar plane junction (green emission), in agreement with structural characterizations. Modification of the contact layout and a post-growth plasma treatment enable strongly suppressing the unwanted green electroluminescence while increasing the intensity in the blue spectral range for the same injected electrical power. Electron beam induced current mapping proves the inhibition of the electrical activity of the top part of the nanowire after plasma treatment. Inductively coupled plasma etching of the In-rich region permits one to completely remove the green emission for all injection currents, but loss of intensity in the blue spectral range is observed. Selectively contacting the m-plane and plasma treatment of the top part of the nanowire appear as a viable solution for controlling the color of core/shell nanowire LEDs with an inhomogeneous indium composition.

The Heteroepitaxy of Thick ß-Ga2O3 Film on Sapphire Substrate with a ß-(AlxGa1-x)2O3 Intermediate Buffer Layer.

A high aluminum (Al) content ß-(AlxGa1-x)2O3 film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained ß-(AlxGa1-x)2O3 film had an average thickness of 750 nm and a surface roughness of 2.10 nm. Secondary ion mass spectrometry results indicated the homogenous distribution of Al components in the film. The Al compositions in the ß-(AlxGa1-x)2O3 film, as estimated by X-ray diffraction, were close to those estimated by X-ray photoelectron spectroscopy, at ~62% and ~61.5%, respectively. The bandgap of the ß-(AlxGa1-x)2O3 film, extracted from the O 1s core-level spectra, was approximately 6.0 ± 0.1 eV. After synthesizing the ß-(AlxGa1-x)2O3 film, a thick ß-Ga2O3 film was further deposited on sapphire substrate using carbothermal reduction and halide vapor phase epitaxy. The ß-Ga2O3 thick film, grown on a sapphire substrate with a ß-(AlxGa1-x)2O3 buffer layer, exhibited improved crystal orientation along the (-201) plane. Moreover, the scanning electron microscopy revealed that the surface quality of the ß-Ga2O3 thick film on sapphire substrate with a ß-(AlxGa1-x)2O3 intermediate buffer layer was significantly improved, with an obvious transition from grain island-like morphology to 2D continuous growth, and a reduction in surface roughness to less than 10 nm.

Applicability of Pre-Plastic Deformation Method for Improving Mechanical Properties of Bulk Metallic Glasses.

Pre-plastic deformation (PPD) treatments on bulk metallic glasses (BMGs) have previously been shown to be helpful in producing multiple shear bands. In this work, the applicability of the PPD approach on BMGs with different Poisson's ratios was validated based on experimental and simulation observations. It was found that for BMGs with high Poisson's ratios (HBMGs, e.g., Zr56Co28Al16 and Zr46Cu46Al8), the PPD treatment can easily trigger a pair of large plastic deformation zones consisting of multiple shear bands. These PPD-treated HBMGs clearly display improved strength and compressive plasticity. On the other hand, the mechanical properties of BMGs with low Poisson's ratios (LBMG, e.g., Fe48Cr15Mo14Y2C15B6) become worse due to a few shear bands and micro-cracks in extremely small plastic deformation zones. Additionally, for the PPD-treated HBMGs with similar high Poisson's ratios, the Zr56Co28Al16 BMG exhibits much larger plasticity than the Zr46Cu46Al8 BMG. This phenomenon is mainly due to more defective icosahedral clusters in the Zr56Co28Al16 BMG, which can serve as nucleation sites for shear transformation zones (STZs) during subsequent deformation. The present study may provide a basis for understanding the plastic deformation mechanism of BMGs.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors.

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p-n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal-organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%.

Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.

A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.