Interfacial water intercalation-induced metal-insulator transition in NbS2/BN heterostructure.

Interfacial engineering, such as molecule intercalation, can modify properties and optimize performance of van der Waals heterostructures and their devices. Here, we investigated the pristine and water molecule intercalated heterointerface of niobium disulphide (NbS2) on hexagonal boron nitride (h-BN) (NbS2/BN) using advanced atomic force microscopy (AFM), and observed the metal-insulator transition (MIT) of first layer (1L-) of NbS2 induced by water molecule intercalation. In pristine sample, interfacial charge transfers were confirmed by the direct detection of trapped static charges at the post-exposed h-BN surface, produced by mechanically peeling off the 1L-NbS2 from the substrate. The interfacial charge transfers facilitate the intercalation of water molecules at the heterointerface. The intercalated water layers make a MIT of 1L-NbS2, while the pristine metallic state of the following NbS2 layers remains preserved. This work is of great significance to help understand the interfacial properties of 2D metal/insulator heterostructures and can pave the way for further preparation of an ultrathin transistor.

Nanoscale charge transfer and diffusion at the MoS2/SiO2 interface by atomic force microscopy: contact injection versus triboelectrification.

Understanding the process of charge generation, transfer, and diffusion between two-dimensional (2D) materials and their supporting substrates is very important for potential applications of 2D materials. Compared with the systematic studies of triboelectric charging in a bulk sample, a fundamental understanding of the triboelectrification of the 2D material/insulator system is rather limited. Here, the charge transfer and diffusion of both the SiO2 surface and MoS2/SiO2 interface through contact electrification and frictional electrification are investigated systematically in situ by scanning Kelvin probe microscopy and dual-harmonic electrostatic force microscopy. Different from the simple static charge transfer between SiO2 and the PtSi alloy atomic force microscope (AFM) tip, the charge transfer between the tip and the MoS2/SiO2 system is complicated. Triboelectric charges, generated by contact or frictional electrification with the AFM tip, are trapped at the MoS2/SiO2 interface and act as floating gates. The local charge discharge processes can be obtained by monitoring the surface potential. The charge decay time (τ) of the MoS2/SiO2 interface is one (or two) orders of magnitude larger than the decay time τ of the SiO2 surface. This work facilitates an understanding of the triboelectric and de-electrification of the interface between 2D materials and substrates. In addition to the charge transfer and diffusion, we demonstrate the nanopatterns of surface and interfacial charges, which have great potential for the application of self-assembly of charged nanostructures.

An efficient method to generate near-ideal hollow beams of different shapes for box potential of quantum gases.

Ultracold quantum gases are usually prepared in conservative traps for quantum simulation experiments. The atomic density inhomogeneity, together with the consequent position-dependent energy and time scales of cold atoms in traditional harmonic traps, makes it difficult to manipulate and detect the sample at a higher level. These problems are partially solved by optical box traps made of blue-detuned hollow beams. However, generating a high-quality hollow beam with high light efficiency for the box trap is challenging. Here, we present a scheme that combines the fixed optics, including axicons and prisms, to pre-shape a Gaussian beam into a hollow beam with a digital micromirror device (DMD) to improve the quality of the hollow beam further, providing a nearly ideal optical potential of various shapes for preparing highly homogeneous cold atoms. The highest power-law exponent of potential walls can reach a value over 100, and the light efficiency from a Gaussian to a hollow beam is also improved compared to direct optical shaping by a mask or a DMD. Combined with a one-dimensional optical lattice, a nearly ideal two-dimensional uniform quantum gas with different geometrical boundaries can be prepared for exploring quantum many-body physics to an unprecedented level.

Dual-Probe Atomic Force Microscopy based on tuning fork probes for critical dimension metrology.

Atomic force microscopy (AFM) is widely used for nano-dimensional metrology in semiconductor manufacturing and metrological system. However, the conventional AFM can't provide accurate CD characterization of nanostructures, due to its top-down configuration and probe-size effect. In this paper, we develop a dual-probe atomic force microscopy (DPAFM). Compared to conventional optical-lever based AFM, the DPAFM exploits two tuning fork probes that simplifies significantly the setup and can be controlled based on frequency-modulation (FM) mode. The developed DPFAM is implemented that builds a zero-reference point by dual-probe alignment firstly, following which, characterizes nanostructures from two sides independently with the two probes. The final CD feature is determined by matching profiles from the two probes based on the zero-reference point. The capability of the DPAFM is validated by experiments on a CD-standard structure, that achieves the true CD assessment with good accuracy and repeatability.

Atomically Asymmetric Inversion Scales up to Mesoscopic Single-Crystal Monolayer Flakes.

Symmetry is highly relevant with various quantities and phenomena in physics. While the translational symmetry breaks at the edges of two-dimensional hexagonal crystalline flakes, it is usually associated with the breaking of central inversion symmetry that is yet to be observed in terms of physical properties. Here, we report an experiment-theory joint study on in-plane compressed single-crystal monolayer WS2 flakes. Although the flakes show a hexagonal appearance with a C6 symmetry, our density functional theory calculations predict that their in-plane strain, geometric structure, work-function, energy bandgap, and mechanical modulus are nonequivalent among the triangular regions with different edge terminations at the atomic scale, and the flakes exhibit self-patterns with a C3 symmetry. Such nonequivalence of physical properties and concomitant self-patterns persist even in a 50 µm-sized monolayer WS2, observed using atomic force microscopy. This indicates that the symmetry arising from the atomic geometry could preserve up to tens of microns for both geometric and properties of the flake, regardless of its mesoscopic geometry, i.e., C6 here. Such a detectable mesoscopic scale and symmetric nano- to mesoscale patterns provide promising building blocks for 2D materials and devices and also allow edge terminations of 2D flakes to be directly distinguished.

Dynamic interfacial mechanical-thermal characteristics of atomically thin two-dimensional crystals.

Owing to the flexible nanoelectronic applications of two-dimensional (2D) materials, further exploration of their nanoscale local mechanical properties and their coupled physical characteristics becomes extremely significant. The puckering effect is a typical micro/nanoscale local frictional characteristic generally in the tip-film-substrate system, which is simultaneously expected to be coupled with a dynamic thermal interfacial response. Here, applying scanning thermal microscopy (SThM), we observed a novel mechanical-thermal coupling effect in monolayer/bilayer MoS2 and WS2 films: puckering deformation can induce the enhancement of interfacial thermal resistance (TR). By the SThM method, the puckering effect was further proved to depend on the film thickness and the scan velocity. More importantly, the crystallographic orientation-dependent anisotropy of the puckering effect in atomically thin two-dimensional crystals was demonstrated by SThM. It is inferred that the puckering deformation of the film redistributes the in-plane stress, resulting in the isotropy breaking of the in-plane stiffness. Such new findings are of great significance to help optimize the nanoscale tribological/thermal design and dynamic mechanical-thermal management of 2D-materials in nanoelectronics.