Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed.

Self-powered deep ultraviolet photodetectors (DUV PDs) are essential in environmental monitoring, flame detection, missile guidance, aerospace, and other fields. A heterojunction photodetector based on p-CuI/n-ZnGa2O4 has been fabricated by pulsed laser deposition combined with vacuum thermal evaporation. Under 260 nm DUV light irradiation, the photodetector exhibits apparent self-powered performance with a maximum responsivity and specific detectivity of 2.75 mA/W and 1.10 × 1011 Jones at 0 V. The photodetector exhibits high repeatability and stability under 260 nm periodic illumination. The response and recovery time are 205 ms and 133 ms, respectively. This work provides an effective strategy for fabricating high-performance self-powered DUV photodetectors.

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications.

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, and is an indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, and the devices detected by medium-wave UV light generally have problems such as low detection rate, low sensitivity, and poor stability, which are difficult to meet the market application needs. Herein, Cs-Cu-I films with mixed-phase have been prepared by vacuum thermal evaporation. By adjusting the proportion of evaporation sources (CsI and CuI), the optical bandgaps of mixed-phase Cs-Cu-I films can be tuned between 3.7 eV and 4.1 eV. This absorption cut-off edge is exactly at both ends of the UVB band, which indicating its potential application in the field of UVB detection. Finally, the photodetectors based on Cs-Cu-I/n-Si heterojunction are fabricated. The photodetector shows good spectral selectivity for UVB band, and has a photoresponsivity of 22 mA/W, a specific detectivity of 1.83*1011 Jones, an EQE over 8.7% and an on/off ratio above 20.

Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition.

Zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa2O4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa2O4 film exhibited a bandgap of 4.93 eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at -5.87 V, a peak responsivity of 14.5 mA/W, and a peak detectivity of 1.14 × 1012 Jones (262 nm, -6 V). The PD exhibited a fast response time (39 ms) and recovery time (30 ms) under 262 nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.

Sensitivity analysis and correction algorithms for atmospheric CO2 measurements with 1.57-µm airborne double-pulse IPDA LIDAR.

In this study, a 1.57-µm airborne double-pulse integrated-path differential absorption (IPDA) light detection and ranging (LIDAR) system was developed for CO2 measurements. This airborne IPDA LIDAR is integrated with a real-time frequency monitoring system, an integrated sensor for temperature, pressure, and humidity, an inertial navigation system, and a global positioning system. The random errors of the LIDAR system, which are caused by the signal noise, background noise, and detector noise, among other factors, are analyzed for different target reflectivities at a flight altitude of 8 km. After parametric optimization, the signal is unsaturated at high target reflectivity. Further, it can be detected at low target reflectivity by adjusting the detector gain. After the averaging of 148 shots, the relative random error (RRE) was 0.057% for a typical target reflectivity of 0.1 sr-1. Moreover, the systematic errors caused by the laser pulse energy, linewidth, spectral purity, and frequency drift, as well as the atmospheric parameters related to the flight experiments are also investigated. The relative system error (RSE) was 0.214% as determined based on an analysis of the systematic errors, which are primarily caused by the frequency drift. Two methods are proposed to reduce the RSE caused by the frequency drift. The first is the averaging of 148 shots, which can reduce the RSE to 0.096%. The other method involves calculating the integral weight function (IWF) using real-time frequency. However, this is a time-consuming and computationally intensive process. Hence, look-up tables for the absorption cross-section were created to overcome this issue, resulting in a decrease in the RSE to 0.096%. Using actual aircraft attitude angles, velocity, and position data from flight experiments, the relative errors (REs) in the IWF caused by the uncorrected integral path and Doppler shift were determined to be 0.273% and 0.479%, respectively. However, it was found that corrections to the integral path and Doppler shift based on accurate calculations of the IWF cause the airborne platform to turn in such a way that the REs are eliminated. Hence, this study confirms the validity of system parameters and provides a reference for other researchers who study similar IPDA LIDAR systems. Further, the sensitivity analysis of the airborne IPDA LIDAR system can provide a reference to future data inversions. Moreover, the proposed correction algorithms for the integral path and Doppler shift contribute to more accurate inversion results.

Analysis of energy monitoring for a double-pulsed CO2 integrated path differential absorption lidar at 1.57 µm.

For double-pulsed 1.57 µm integrated path differential absorption lidar, the transmitted pulse energy measurement is an important factor that can influence the uncertainty of CO2 concentration measurement. An energy monitoring experiment was performed to determine how to improve the measurement precision of the transmitted pulse energy. Ground glass diffusers were used to reduce the speckle effect during energy monitoring. The roughness and rotational speed of the ground glass diffusers were considered and compared. The normalized energy ratios between on-line and off-line echo pulses and on-line and off-line energy monitoring pulses were analyzed, and the Allan deviation was used to evaluate the energy monitoring results. Averaging 148 shots, the standard deviation of the normalized energy ratio reached 0.0757%, whereas the correlation between the energy ratio of the on-line and off-line energy monitoring pulses and the energy ratio of the on-line and off-line echo pulses was higher than 90%.

Double-pulse 1.57 µm integrated path differential absorption lidar ground validation for atmospheric carbon dioxide measurement.

A ground-based double-pulse integrated path differential absorption (IPDA) instrument for carbon dioxide (CO2) concentration measurements at 1572 nm has been developed. A ground experiment was implemented under different conditions with a known wall located about 1.17 km away acting as the scattering hard target. Off-/offline testing of a laser transmitter was conducted to estimate the instrument systematic and random errors. Results showed a differential absorption optical depth (DAOD) offset of 0.0046 existing in the instrument. On-/offline testing was done to achieve the actual DAOD resulting from the CO2 absorption. With 18 s pulses average, it demonstrated that a CO2 concentration measurement of 432.71±2.42 ppm with 0.56% uncertainty was achieved. The IPDA ranging led to a measurement uncertainty of 1.5 m.

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier.

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells.

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.