A silicon diode-based optoelectronic interface for bidirectional neural modulation.

The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical-based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that a thin-film, silicon (Si)-based diode device is capable to bidirectionally regulate in vitro and in vivo neural activities upon adjusted illumination. When exposed to high-power and short-pulsed light, the Si diode generates photothermal effects, evoking neuron depolarization and enhancing intracellular calcium dynamics. Conversely, low-power and long-pulsed light on the Si diode hyperpolarizes neurons and reduces calcium activities. Furthermore, the Si diode film mounted on the brain of living mice can activate or suppress cortical activities under varied irradiation conditions. The presented material and device strategies reveal an innovated optoelectronic interface for precise neural modulations.

Mapping the intrinsic photocurrent streamlines through micromagnetic heterostructure devices.

Photocurrent in quantum materials is often collected at global contacts far away from the initial photoexcitation. This collection process is highly nonlocal. It involves an intricate spatial pattern of photocurrent flow (streamlines) away from its primary photoexcitation that depends sensitively on the configuration of current collecting contacts as well as the spatial nonuniformity and tensor structure of conductivity. Direct imaging to track photocurrent streamlines is challenging. Here, we demonstrate a microscopy method to image photocurrent streamlines through ultrathin heterostructure devices comprising platinum on yttrium iron garnet (YIG). We accomplish this by combining scanning photovoltage microscopy with a uniform rotating magnetic field. Here, local photocurrent is generated through a photo-Nernst type effect with its direction controlled by the external magnetic field. This enables the mapping of photocurrent streamlines in a variety of geometries that include conventional Hall bar-type devices, but also unconventional wing-shaped devices called electrofoils. In these, we find that photocurrent streamlines display contortion, compression, and expansion behavior depending on the shape and angle of attack of the electrofoil devices, much in the same way as tracers in a wind tunnel map the flow of air around an aerodynamic airfoil. This affords a powerful tool to visualize and characterize charge flow in optoelectronic devices.

Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal-Dielectric Al/Si/Ge Metasurface.

Optical metasurfaces enable the manipulation of the light-matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal-dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing.

Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices.

We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.

Intrinsic Self-Trapped Excitons in Graphitic Carbon Nitride.

Graphitic carbon nitrides (g-C3N4) as low-cost, chemically stable, and ecofriendly layered semiconductors have attracted rapidly growing interest in optoelectronics and photocatalysis. However, the nature of photoexcited carriers in g-C3N4 is still controversial, and an independent charge-carrier picture based on the band theory is commonly adopted. Here, by performing transient spectroscopy studies, we show characteristics of self-trapped excitons (STEs) in g-C3N4 nanosheets including broad trapped exciton-induced absorption, picosecond exciton trapping without saturation at high photoexcitation density, and transient STE-induced stimulated emissions. These features, together with the ultrafast exciton trapping polarization memory, strongly suggest that STEs intrinsically define the nature of the photoexcited states in g-C3N4. These observations provide new insights into the fundamental photophysics of carbon nitrides, which may enlighten novel designs to boost energy conversion efficiency.

Nanoscale Optical Conductivity Imaging of Double-Moiré Twisted Bilayer Graphene.

A central paradigm of moiré materials relies on the formation of superlattices that yield enlarged effective crystal unit cells. While a critical consequence of this phenomenon is the celebrated flat electronic bands that foster strong interaction effects, the presence of superlattices has further implications. Here we explore the advantages of moiré superlattices in twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (hBN) for passively enhancing optical conductivity in the low-energy regime. To probe the local optical response of TBG/hBN double-moiré lattices, we use infrared (IR) nano-imaging in conjunction with nanocurrent imaging to examine local optical conductivity over a wide range of TBG twist angles. We show that interband transitions associated with the multiple moiré flat and dispersive bands produce tunable transparent IR responses even at finite carrier densities, which is in stark contrast to the previously limited metallic near transparency observed only in undoped pristine graphene.

Spatial Filtering of Interlayer Exciton Ground State in WSe2/MoS2 Heterobilayer.

Long-life interlayer excitons (IXs) in transition metal dichalcogenide (TMD) heterostructure are promising for realizing excitonic condensates at high temperatures. Critical to this objective is to separate the IX ground state (the lowest energy of IX state) emission from other states' emissions. Filtering the IX ground state is also essential in uncovering the dynamics of correlated excitonic states, such as the excitonic Mott insulator. Here, we show that the IX ground state in the WSe2/MoS2 heterobilayer can be separated from other states by its spatial profile. The emissions from different moiré IX modes are identified by their different energies and spatial distributions, which fits well with the rate-diffusion model for cascading emission. Our results show spatial filtering of the ground state mode and enrich the toolbox to realize correlated states at elevated temperatures.

Wavelength-Dependent Multistate Programmability and Optoelectronic Logic-in-Memory Operation from the Narrow Bandgap pNDI-SVS Floating Gate.

This study introduces wavelength-dependent multistate programmable optoelectronic logic-in-memory (OLIM) operation using a broadband photoresponsive pNDI-SVS floating gate. The distinct optical absorption of the relatively large bandgap DNTT channel (2.6 eV) and the narrow bandgap pNDI-SVS floating gate (1.37 eV) lead to varying light-induced charge carrier accumulation across different wavelengths. In the proposed OLIM device comprising the p-type pNDI-SVS-based optoelectronic memory (POEM) transistor and an IGZO n-type transistor, we achieve controllable output voltage signals by modulating the pull-up performance through optical wavelength and applied bias manipulation. Real-time OLIM operation yields four discernible output values. The device's high mechanical flexibility and seamless surface integration among the paper substrate, pNDI-SVS, parylene gate dielectric, and DNTT region render it compatible for integration into paper-based optoelectronics. Our flexible POEM device on name card substrates demonstrates stable operational performance, with minimal variation (8%) after 100 cycles of repeated memory operation, remaining reliable across various angle measurements.

Spectrally Pure, High Operational Dynamic Range, Deep Red Micro-LEDs.

III-nitride-based micro-light-emitting diodes (micro-LEDs) are currently under rapid development for next-generation high-resolution and high-brightness displays and augmented/virtual reality (AR/VR) technologies. However, it remains elusive to achieve red-emitting III-nitride micro-LEDs with a microscale size, high efficiency, and high spectral stability, posing significant impediments to the development of full-color micro-LEDs. In this work, through detailed strain engineering and control of charge carrier transport, we achieved pure red emission (≥620 nm) micro-LEDs over 2 orders of magnitude of injection current variation. We show both theoretically and experimentally that the combination of a short-period InGaN/GaN superlattice and a thick n-type GaN interlayer can not only relieve the quantum-confined Stark effect in the active region but also suppress parasitic emission from the superlattice. The optimized deep red micro-LEDs with a device lateral dimension of ∼1 µm feature a maximal external quantum efficiency of over 3% emitting at ∼660 nm.

The Emerging Star of Carbon Luminescent Materials: Exploring the Mysteries of the Nanolight of Carbon Dots for Optoelectronic Applications.

Carbon dots (CDs), a class of carbon-based nanomaterials with dimensions less than 10 nm, have attracted significant interest since their discovery. They possess numerous excellent properties, such as tunability of photoluminescence, environmental friendliness, low cost, and multifunctional applications. Recently, a large number of reviews have emerged that provide overviews of their synthesis, properties, applications, and their composite functionalization. The application of CDs in the field of optoelectronics has also seen unprecedented development due to their excellent optical properties, but reviews of them in this field are relatively rare. With the idea of deepening and broadening the understanding of the applications of CDs in the field of optoelectronics, this review for the first time provides a detailed summary of their applications in the field of luminescent solar concentrators (LSCs), light-emitting diodes (LEDs), solar cells, and photodetectors. In addition, the definition, categories, and synthesis methods of CDs are briefly introduced. It is hoped that this review can bring scholars more and deeper understanding in the field of optoelectronic applications of CDs to further promote the practical applications of CDs.

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by "scotch-tape," are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.

Dual Chalcogen-Bonding Interaction for High-Performance Filterless Narrowband Organic Photodetectors.

A novel green-absorbing organic molecule featuring dual intramolecular chalcogen bonds is synthesized and characterized. This molecule incorporates two such bonds: one between a tellurium atom and the oxygen atom of a carbonyl moiety, and the other between the tellurium atom and the adjacent nitrogen atom within a pyridine moiety. The molecule, featuring dual intramolecular chalcogen bonds exhibits a narrow absorption spectrum and elevated absorption coefficients, closely aligned with a resonance parameter of approximately 0.5. This behavior is due to its cyanine-like characteristics and favorable electrical properties, which are a direct result of its rigid, planar molecular structure. Therefore, this organic molecule forming dual intramolecular chalcogen bonds achieves superior optoelectronic performance in green-selective photodetectors, boasting an external quantum efficiency of over 65% and a full-width at half maximum of less than 95 nm while maintaining the performance after 1000 h of heating aging at 85 °C. Such organic photodetectors are poised to enhance stacked organic photodetector-on-silicon hybrid image sensors, paving the way for the next-generation of high-resolution and high-sensitivity image sensors.

Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy-Efficient Neuromorphic Optical Operation.

The optoelectronic synaptic transistors with various functions, broad spectral perception, and low power consumption are an urgent need for the development of advanced optical neural network systems. However, it remains a great challenge to realize the functional diversification of the systems on a single device. 2D van der Waals (vdW) materials can combine unique properties by stacking with each other to form heterojunctions, which may provide a strategy for solving this problem. Herein, an all-2D vdW heterojunction-based programmable optoelectronic synaptic transistor based on MoS2/Ta2NiS5 heterojunctions is demonstrated. The device implements reconfigurable, multilevel non-volatile memory (NVM) states through sequential modulation of multiple optical and electrical stimuli to achieve broadband (532-808 nm), energy-efficient (17.2 fJ), hetero-synaptic functionality in a bionic manner. The intrinsic working mechanisms of the photogating effect caused by band alignment and the interfacial trapping defect modulation induced by gate voltage are revealed by Kelvin-probe force microscopy (KPFM) measurements and carrier transport analysis. Overall, the (opto)electronic synaptic weight controllability for combined in-sensor and in-memory logic processors is realized by the heterojunction properties. The proposed findings facilitate the technical realization of generic all 2D hetero-synapses for future artificial vision systems, opto-logical systems, and Internet of Things (IoT) entities.

Naphthalene diimide-Annulated Heterocyclic Acenes: Synthesis, Electrochemical and Semiconductor Properties and their Multifaceted Applications.

Acenes and Naphthalene Diimides (NDIs) stand as distinguished classes of organic compounds, each possessing unique and intriguing properties that have garnered significant attention across various scientific disciplines. Acenes, characterized by linearly fused aromatic rings, have captivated researchers due to their diverse electronic structures and promising applications in materials science. On the other hand, NDIs, known for their distinctive electron-accepting properties, exhibit remarkable versatility in fields ranging from organic electronics, supramolecular to spin chemistry. In this review, we navigate through the fascinating realms of both acenes and NDIs before converging our focus on the highly diverse and distinctive subgroup of NDI-annulated heterocyclic acenes. This potentially important subgroup, has emerged as a subject of intense investigation, encapsulating their fascinating synthesis, optical and electrochemical characteristics, and multifaceted applications that span the realms of chemistry, physics, and biology. Through the exploration of their synthetic strategies, unique properties, and diverse applications, this review aims to offer a comprehensive understanding of the pivotal role played by NDI-based heterocyclic acenes in contemporary multidisciplinary research and technological innovation.

n-Type Fullerene-Carbon Dots: Synthesis and Electrochemical and Photophysical Properties.

The covalent incorporation of C60 and C70 derivatives of the well-known n-type organic semiconductor PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) onto carbon dots (CD) is described. Morphological and structural characterization reveal combined features of both pristine starting materials (CD and PCBM). Electrochemical investigations evidenced the existence of additional reduction processes to that of CD or PCBM precursors, showing rich electron-acceptor capabilities, with multistep processes in an affordable and narrow electrochemical window (ca. 1.5 V). Electronic communication in the obtained nanoconjugated species were derived from steady-state absorption and emission spectroscopies, which showed bathochromically shifted absorptions and emissions well entering the red region. Finally, the lower fluorescence quantum yield of CD-PCBM nanoconjugates, compared with CD, and the fast decay of the observed emission of CD, support the existence of an electronic communication between both CD and PCBM units in the excited state.

Nano-antennas with decoupled transparent leads for optoelectronic studies.

Performing electrical measurements on single plasmonic nanostructures presents a challenging task due to the limitations in contacting the structure without disturbing its optical properties. In this work, we show two ways to overcome this problem by fabricating bow-tie nano-antennas with indium tin oxide leads. Indium tin oxide is transparent in the visible range and electrically conducting, but non-conducting at optical frequencies. The structures are prepared by electron beam lithography. Further definition, such as introducing small gaps, is achieved by focused helium ion beam milling. Dark-field reflection spectroscopy characterization of the dimer antennas shows typical unperturbed plasmonic spectra with multiple resonance peaks from mode hybridization.

Dynamics of interfacial charge transfer between CsPbBr3perovskite nanocrystals and molecular acceptors for photodetection application.

Perovskite nanocrystals (NCs) recently emerged as a suitable candidate for optoelectronic applications because of its simplistic synthesis approach and superior optical properties. For better device performance, the effective absorption of incident photons and the understanding of charge transfer (CT) process are the basic requirements. Herein, we investigate the interfacial charge transfer dynamics of CsPbBr3NCs in the presence of different molecular acceptors; 7,7,8,8-Tetracyanoquinodimethane (TCNQ) and 11,11,12,12 tetracyanonaphtho-2,6-quinodimethane (TCNAQ). The vivid change in CT dynamics at the interfaces of NCs and two different molecular acceptors (TCNQ and TCNAQ) has been observed. The results demonstrate that the ground state complex formation in the presence of TCNQ acts as additional driving force to accelerate the charge transfer between the NCs and molecular acceptor. Moreover, this donor (NCs)-acceptor (TCNQ, TCNAQ) system results in the higher absorption of incident photons. Finally, the photo detector based on CsPbBr3-TCNQ system was fabricated for the first time. The device exhibited a high on-off ratio (104). Furthermore, the CsPbBr3-TCNQ photodetector shows a fast photoresponse times of 180 ms/110 ms (rise/decay time) with a specific detectivity (D*) of 5.2 × 1011Jones. The simple synthesis and outstanding photodetection abilities of this perovskite NCs-molecular acceptor system make them potential candidates for optoelectronic applications.

Calcium Sulfide Based Nanophosphors-A Review on Synthesis Techniques, Characterization and Applications.

Calcium sulfide (CaS) is a widely investigated alkaline earth sulfide nanophosphor with promising applications in optoelectronics and biomedical fields due to its excellent photoluminescence properties. The selection of the synthesis method is a crucial factor in determining the efficacy of nanophosphors for various applications. This review provides a comprehensive overview of the various synthesis techniques employed to develop CaS nanophosphors, including solvothermal, alkoxide, sol-gel, microwave, wet chemical co-precipitation, solid-state diffusion, and single-source precursor methods. The structural and optical properties of CaS nanophosphors are discussed in detail, highlighting the influence of different dopants on the emission color, which can be tuned from blue to red. The review also explores the potential applications of CaS nanophosphors in optoelectronics and biomedicine. This review serves as a valuable resource for researchers interested in developing CaS nanophosphors for various optoelectronic and biomedical applications, providing insights into the latest advancements and future prospects in this field.

Relating Structure to Properties in Non-Conjugated Pendant Electroactive Polymers.

Non-conjugated pendant electroactive polymers (NCPEPs) are an emerging class of polymers that offer the potential of combining the desirable optoelectronic properties of conjugated polymers with the superior synthetic methodologies and stability of traditional non-conjugated polymers. Despite an increasing number of studies focused on NCPEPs, particularly on understanding fundamental structure-property relationships, no attempts have been made to provide an overview on established relationships to date. This review showcases selected reports on NCPEP homopolymers and copolymers that demonstrate how optical, electronic, and physical properties of the polymers are affected by tuning of key structural variables such as the chemical structure of the polymer backbone, molecular weight, tacticity, spacer length, the nature of the pendant group, and in the case of copolymers the ratios between different comonomers and between individual polymer blocks. Correlation of structural features with improved π-stacking and enhanced charge carrier mobility serve as the primary figures of merit in evaluating impact on NCPEP properties. While this review is not intended to serve as a comprehensive summary of all reports on tuning of structural parameters in NCPEPs, it highlights relevant established structure-property relationships that can serve as a guideline for more targeted design of novel NCPEPs in the future.

Recent synthetic strategies of small heterocyclic organic molecules with optoelectronic applications: a review.

Over the past few years, there have been tremendous developments in the design and synthesis of organic optoelectronic materials with appealing applications in device fabrication of organic light-emitting diodes, superconductors, organic lasers, organic field-effect transistors, clean energy-producing organic solar cells, etc. There is an increasing demand for the synthesis of green, highly efficient organic optoelectronic materials to cope with the issue of efficiency roll-off in organic semiconductor-based devices. This review systematically summarized the recent progress in the design and synthesis of small organic molecules having promising optoelectronic properties for their potential applications in optoelectronic devices during the last 10-year range (2010-early 2021).