Regulating Hetero-Nucleation Enabling Over 14% Efficient Kesterite Solar Cells.

Developing well-crystallized light-absorbing layers remains a formidable challenge in the progression of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. A critical aspect of optimizing CZTSSe lies in accurately governing the high-temperature selenization reaction. This process is intricate and demanding, with underlying mechanisms requiring further comprehension. This study introduces a precursor microstructure-guided hetero-nucleation regulation strategy for high-quality CZTSSe absorbers and well-performing solar cells. The alcoholysis of 2-methoxyethanol (MOE) and the generation of high gas-producing micelles by adding hydrogen chloride (HCl) as a proton additive into the precursor solution are successfully suppressed. This tailored modification of solution components reduces the emission of volatiles during baking, yielding a compact and dense precursor microstructure. The reduced-roughness surface nurtures the formation of larger CZTSSe nuclei, accelerating the ensuing Ostwald ripening process. Ultimately, CZTSSe absorbers with enhanced crystallinity and diminished defects are fabricated, attaining an impressive 14.01% active-area power conversion efficiency. The findings elucidate the influence of precursor microstructure on the selenization reaction process, paving a route for fabricating high-quality kesterite CZTSSe films and high-efficiency solar cells.

In Situ Construction of Bimetallic Selenides Heterogeneous Interface on Oxidation-Stable Ti3C2Tx MXene Toward Lithium Storage with Ultrafast Charge Transfer Kinetics.

Ti3C2Tx (MXene) is widely acknowledged as an excellent substrate for constructing heterogeneous structures with transition metal chalcogenides (TMCs) for boosting the electrochemical performance of lithium-ion storage. However, conventional synthesis strategies inevitably lead to poor electrochemical charge transfer due to Ti3C2Tx-derived TiO2 at the heterogeneous interface between Ti3C2Tx and TMCs. Here, an innovative in situ selenization strategy is proposed to replace the originally generated TiO2 on Ti3C2Tx with metallic TiSe2 interphase, clearing the bottleneck of slow charge transfer barrier caused by MXene oxidation. The construction of bimetallic selenide formed by CoSe2 and TiSe2 generates intrinsic electric fields to guide the fast ion diffusion kinetics in a heterogeneous interface. Additionally, the CoSe2/TiSe2/Ti3C2Tx heterogeneous structure with enhanced structural stability and improved rate performance is confirmed by both experiments and theoretical calculations. The engineered heterogeneous structure exhibits an ultra-high pseudocapacitance contribution (73.1% at 0.1 mV s-1), rendering it well-suited to offset the kinetics differences between double-layer materials. The assembled lithium-ion capacitor based on CoSe2/TiSe2/Ti3C2Tx possesses a high energy density and an ultralong life span (89.5% after 10 000 times at 2 A g-1). This devised strategy provides a feasible solution for utilizing the performance advantages of MXene substrates in lithium storage with ultrafast charge transfer kinetics.

Sodium Incorporation for Performance Improvement of Solution-Processed Submicron CuIn(S,Se)2 Thin Film Solar Cells.

Low-cost solution-processed CuIn(S,Se)2 (CISSe) has great potential for large-scale production of photovoltaics (PV). However, low power conversion efficiency caused by poor crystallinity is one of the main drawbacks compared to vacuum-processed CISSe solar cells. In this work, three strategies for sodium (Na) incorporation into solution-processed CISSe by soaking in sodium chloride (NaCl) aqueous-ethanol solution [1 molarity (M) for 10 minutes (min)], either prior to absorber deposition (pre-deposition treatment, Pre-DT), before selenization (pre-selenization treatment, Pre-ST), or after selenization (post-selenization treatment, PST) are researched. The Pre-ST CISSe solar cells achieve a better PV performance than those from the other two strategies of Na incorporation. For optimization, soaking times (5, 10, and 15 min) and NaCl concentrations (from 0.2 to 1.2 m) of the Pre-ST are researched. The highest efficiency achieved is 9.6% with an open-circuit voltage (Voc ) of 464.5 mV, a short-circuit current density (jsc ) of 33.4 mA cm-2 , and a fill factor (FF) of 62.0%. Compared to the reference CISSe solar cell, Voc , jsc , FF, and efficiency of the champion Pre-ST CISSe device are improved absolutely by 61.0 mV, 6.5 mA cm-2 , 9%, and 3.8%, respectively. Simultaneously, the open-circuit voltage deficit, the back contact barrier, and the bulk recombination are found to be reduced for Pre-ST CISSe.

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique.

Flexible Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells show great potential due to non-toxicity and low cost. The quality of CZTSSe absorber suffering from the high-temperature selenization process is the key to overcoming open-circuit voltage (VOC ) deficit and obtaining high efficiency. In this work, the authors develop a selenization technique to improve the quality of the CZTSSe layer by pre-evaporation selenization. This method provides saturated selenium vapor at the beginning of the selenization process to promote the crystallization process. The oversaturated selenium source greatly shortens the annealing time at high temperatures. The prepared CZTSSe films have larger grains and fewer voids. The measurement of the space charge limited current shows that the defect density of the CZTSSe absorber is significantly reduced from 4.43 × 1013  cm-3 to 3.46 × 1013 cm-3 . Electrical tests show that the devices have better charge separation at the interface, resulting in a charge recombination lifetime, increasing from 133 to 197 µs. The power conversion efficiency of the flexible CZTSSe solar cell reaches 10.24% with VOC and the fill factor enhances to 463 mV and 62%, respectively. The safe non-toxicity and efficient selenization method is expected to provide a new strategy for high-efficiency flexible CZTSSe solar cells.

Microenvironment Created by SnSe2 Vapor and Pre-Selenization to Stabilize the Surface and Back Contact in Kesterite Solar Cells.

The ambient air-processed preparation of kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) thin film is highly promising for the fabrication of low-cost and eco-friendly solar cells. However, the Sn volatilization loss and formation of a thick Mo(S,Se)2 interfacial layer during the traditional selenization process pose challenges for fabricating high-efficiency CZTSSe solar cells. Here, CZTS precursors prepared by a sol-gel process in ambient air are selenized and assisted with SnSe2 vapor via one- and two-step selenization to prepare a CZTSSe absorber on a Mo film and, subsequently, solar cells. For one-step selenization, the thickness of the fine grain and Mo(S,Se)2 layers near the back contact can be significantly reduced with increasing SnSe2 vapor partial pressure in the mixed selenization atmosphere, while the device efficiency is only 7.97% due to the severe interface recombination. For two-step selenization, the desired morphology and stoichiometry of the absorber can be achieved through the assistance of Sn-poor precursors selenized with high SnSe2 vapor partial pressure to regulate the Sn content in CZTSSe, yielding the highest efficiency of 10.85%. This study improves the understanding of the key role of the microenvironment during film growth towards the production of high-efficiency thin film solar cells and other photoelectronic devices.

Rational design of selenium inserted 1T/2H mixed-phase molybdenum disulfide for energy storage and pollutant degradation applications.

MoS2based materials are recognized as the promising candidate for multifunctional applications due to its unique physicochemical properties. But presence of lower number of active sites, poor electrical conductivity, and less stability of 2H and 1T MoS2inherits its practical applications. Herein, we synthesized the Se inserted mixed-phase 2H/1T MoS2nanosheets with abundant defects sites to achieve improved overall electrochemical activity. Moreover, the chalcogen insertion induces the recombination of photogenerated excitons and enhances the life of carriers. The bifunctional energy storage and photocatalytic pollutant degradation studies of the prepare materials are carried out. Fabricated symmetric solid-state supercapacitor showed an exceptional capacitance of 178 mF cm-2with an excellent energy density of 8µWh cm-2and power density of 137 mW cm-2, with remarkable capacitance retention of 86.34% after successive 8000 charge-discharge cycles. The photocatalytic dye degradation experiments demonstrate that the prepared Se incorporated 1T/2H MoS2is a promising candidate for dye degradation applications. Further, the DFT studies confirmed that the Se inserted MoS2is a promising electrode material for supercapacitor applications with higherCQdue to a larger density of states near Fermi level as compared to pristine MoS2.

Anisotropic charge carrier transport of optoelectronic functional selenium-containing organic semiconductor materials.

Organic semiconductors (OSCs) materials are currently under intense investigation because of their potential applications such as organic field-effect transistors, organic photovoltaic devices, and organic light-emitting diodes. Inspired by the selenization strategy can promote anisotropic charge carrier migration, and selenium-containing compounds have been proved to be promising materials as OSCs both for hole and electron transfer. Herein, we now explore the anisotropic transport properties of the series of selenium-containing compounds. For the compound containing SeSe bond, the SeSe bond will break when attaching an electron, thus those compounds cannot act as n-type OSCs. About the different isomer compounds with conjugated structure, the charge transfer will be affected by the stacking of the conjugated structures. The analysis of chemical structure and charge transfer property indicates that Se-containing materials are promising high-performance OSCs and might be used as p-type, n-type, or ambipolar OSCs. Furthermore, the symmetry of the selenium-containing OSCs will affect the type of OSCs. In addition, there is no direct relationship between the R groups with their performance, whether it or not as p-type OSCs or n-types. This work demonstrates the relationship between the optoelectronic function and structure of selenium-containing OSCs materials and hence paves the way to design and improve optoelectronic function of OSCs materials.

Tunable Surface Selenization on MoO2 -Based Carbon Substrate for Notably Enhanced Sodium-Ion Storage Properties.

Transition metal chalcogenides with high theoretical capacity are promising conversion-type anode materials for sodium ion batteries (SIBs), but often suffer from unsatisfied cycling stability (hundreds of cycles) caused by structural collapse and agglomerate. Herein, a rational strategy of tunable surface selenization on highly crystalline MoO2 -based carbon substrate is designed, where the sheet-like MoSe2 can be coated on the surface of bundle-like N-doped carbon/granular MoO2 substrate, realizing partial transformation from MoO2 to MoSe2 , and creating b-NC/g-MoO2 @s-MoSe2 -10 with robust hierarchical MoO2 @MoSe2 heterostructures and strong chemical couplings (MoC and MoN). Such well-designed architecture can provide signally improved reaction kinetics and reinforced structural integrity for fast and stable sodium-ion storage, as confirmed by the ex situ results and kinetic analyses as well as the density functional theory calculations. As expected, the b-NC/g-MoO2 @s-MoSe2 -10 delivers splendid rate capability and ultralong cycling stability (254.2 mAh g-1 reversible capacity at 5.0 A g-1 after 6000 cycles with ≈89.0% capacity retention). Therefore, the tunable surface strategy can provide new insights for designing and constructing heterostructures of transition metal chalcogenides toward high-performance SIBs.

Accurately Regulating the Electronic Structure of Nix Sey @NC Core-Shell Nanohybrids through Controllable Selenization of a Ni-MOF for pH-Universal Hydrogen Evolution Reaction.

N-doped carbon-encapsulated transition metal selenides (TMSs) have garnered increasing attention as promising electrocatalysts for hydrogen evolution reaction (HER). Accurately regulating the electronic structure of these nanohybrids to reveal the underlying mechanism for enhanced HER performances is still challenging and thus requires deep excavation. Herein, a series of pomegranate-like Nix Sey @NC core-shell nanohybrids (including Ni0.85 Se @ NC, NiSe2 @NC, and NiSe@NC) through controllable selenization of a Ni-MOF precursor is reported. The component of the nanohybrids can be fine-tuned by tailoring the selenization temperature and feed ratio, through which the electronic structure can be synchronously regulated. Among these nanohybrids, the Ni0.85 Se @ NC exhibits the optimum pH-universal HER performance with overpotentials of 131, 135, and 183 mV in 0.5 m H2 SO4 , 1.0 m KOH, and 1.0 m PBS, respectively, at 10 mA cm-2 , which are attributed to the increased partial density of state at the Fermi level and effective van der Waals interactions between Ni0.85 Se and NC matrix explained by density functional theory calculations.

Rational Construction of Hollow Core-Branch CoSe2 Nanoarrays for High-Performance Asymmetric Supercapacitor and Efficient Oxygen Evolution.

Metal selenides have great potential for electrochemical energy storage, but are relatively scarce investigated. Herein, a novel hollow core-branch CoSe2 nanoarray on carbon cloth is designed by a facile selenization reaction of predesigned CoO nanocones. And the electrochemical reaction mechanism of CoSe2 in supercapacitor is studied in detail for the first time. Compared with CoO, the hollow core-branch CoSe2 has both larger specific surface area and higher electrical conductivity. When tested as a supercapacitor positive electrode, the CoSe2 delivers a high specific capacitance of 759.5 F g-1 at 1 mA cm-2 , which is much larger than that of CoO nanocones (319.5 F g-1 ). In addition, the CoSe2 electrode exhibits excellent cycling stability in that a capacitance retention of 94.5% can be maintained after 5000 charge-discharge cycles at 5 mA cm-2 . An asymmetric supercapacitor using the CoSe2 as cathode and an N-doped carbon nanowall as anode is further assembled, which show a high energy density of 32.2 Wh kg-1 at a power density of 1914.7 W kg-1 , and maintains 24.9 Wh kg-1 when power density increased to 7354.8 W kg-1 . Moreover, the CoSe2 electrode also exhibits better oxygen evolution reaction activity than that of CoO.

Seed growth of tungsten diselenide nanotubes from tungsten oxides.

We report growth of tungsten diselenide (WSe2) nanotubes by chemical vapor deposition with a two-zone furnace. WO3 nanowires were first grown by annealing tungsten thin films under argon ambient. WSe2 nanotubes were then grown at the tips of WO3 nanowires through selenization via two steps: (i) formation of tubular WSe2 structures on the outside of WO3 nanowires, resulting in core (WO3)-shell (WSe2) and (ii) growth of WSe2 nanotubes at the tips of WO3 nanowires. The observed seed growth is markedly different from existing substitutional growth of WSe2 nanotubes, where oxygen atoms are replaced by selenium atoms in WO3 nanowires to form WSe2 nanotubes. Another advantage of our growth is that WSe2 film was grown by simply supplying hydrogen gas, where the native oxides were reduced to thin film instead of forming oxide nanowires. Our findings will contribute to engineer other transition metal dichacogenide growth such as MoS2, WS2, and MoSe2.

Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization.

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated materials, due to the lack of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer WSe2 films by selenizing prepatterned tungsten with either solid-source selenium at 900 °C or H2Se precursors at 650 °C. Both methods yield photovoltaic-grade, wafer-scale WSe2 films with a layered van der Waals structure and superior characteristics, including charge carrier lifetimes up to 144 ns, over 14× higher than those of any other large-area TMD films previously demonstrated. Simulations show that such carrier lifetimes correspond to ∼22% power conversion efficiency and ∼64 W g-1 specific power in a packaged solar cell, or ∼3 W g-1 in a fully packaged solar module. The results of this study could facilitate the mass production of high-efficiency multilayer WSe2 solar cells at low cost.

Plasma-Driven Selenization for Electrical Property Enhancement in Janus 2D Materials.

The recent emergence of Janus 2D materials like SnSSe, derived from SnS2, reveals unique electrical and optical features, such as asymmetrical electronic structure, enhanced carrier mobility, and tunable bandgap. Previous theoretical studies have discuss the electronic properties of Janus SnSSe, but experimental evidence is limited. This study presents a two-step method for synthesizing Janus SnSSe, involving hydrogen plasma treatment and in situ selenization. Optimized conditions (38 W, 1.5 min, 250 °C) are determined using Raman spectroscopy and AFM analysis. XPS confirmed SnSSe's elemental composition, while KPFM reveals a significant reduction in the work function (from 5.26 down to 5.14 eV) for the first time, indicating asymmetrically induced n-type doping. Finally, field-effect transistors (FETs) derived from SnSSe exhibited significantly enhanced mobility and on-current, as well as n-type doping, compared to SnS2-based FETs. These findings lay a crucial foundation for developing high-performance 2D electronic and optoelectronic devices.

Segmented Control of Selenization Environment for High-Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells.

High-crystalline-quality absorbers with fewer defects are crucial for further improvement of open-circuit voltage (VOC) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. However, the preparation of high-quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single-layer thin film. The reduced evaporation area of Se in the later stage creates a soft-selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn-related deep-level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the VOC. As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low VOC deficit.

Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons.

Low-temperature large-area growth of two-dimensional (2D) transition-metal dichalcogenides (TMDs) is critical for their integration with silicon chips. Especially, if the growth temperatures can be lowered below the back-end-of-line (BEOL) processing temperatures, the Si transistors can interface with 2D devices (in the back end) to enable high-density heterogeneous circuits. Such configurations are particularly useful for neuromorphic computing applications where a dense network of neurons interacts to compute the output. In this work, we present low-temperature synthesis (400 °C) of 2D tungsten diselenide (WSe2) via the selenization of the W film under ultrahigh vacuum (UHV) conditions. This simple yet effective process yields large-area, homogeneous films of 2D TMDs, as confirmed by several characterization techniques, including reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and different spectroscopy methods. Memristors fabricated using the grown WSe2 film are leveraged to realize a novel compact neuron circuit that can be reconfigured to enable homeostasis.

Constructing quasi-layered and self-hole doped SnSe oriented films to achieve excellent thermoelectric power factor and output power density.

Thermoelectric (TE) technology can achieve the mutual conversion between electric energy and waste heat, and it has exhibited great prospects in multifunctional energy applications to alleviate the energy crisis. In the recent decade, SnSe has been explored widely because of its potentially high energy harvesting efficiency, green nature, and low cost. However, the relatively poor power factor (PF) derived from the intrinsic low carrier concentration (∼1017 cm-3) limits the output power density of the stoichiometric SnSe devices. Therefore, the advancement of novel optimization strategies for controlling carrier concentration is of utmost importance. Besides, compared with 3D bulks, 2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction and application of TE micro- and nano-devices. In this study, post-selenization technology were applied to increase the carrier concentration of the a-axis oriented SnSe epitaxial films utilizing the charge transfer and self-hole doped effects. The quasi-layered and self-hole doped films exhibited a high power factor of ∼5.9 µW cm-1 K-2 at 600 K along the in-plane direction when the carrier concentration is enhanced to ∼1018 cm-3 by increasing the selenization time to ∼20 min. The TE generator composed of four P-type film legs demonstrated the ultrahigh maximum power density of ∼83, ∼838 µW cm-2 at the temperature difference of ∼50 and ∼90 K, respectively. Post-selenization can effectively optimize the carrier concentration of SnSe-based materials, which is also feasible to other anion deficient TE films.

Facile Synthesis of Microsphere-like Co0.85Se Structures on Nickel Foam for a Highly Efficient Hydrogen Evolution Reaction.

Microsphere-shaped cobalt selenide (Co0.85Se) structures were efficiently synthesized via a two-step hydrothermal process. Initially, cobalt hydroxide fluoride (Co(OH)F) microcrystals were prepared using a hydrothermal method. Subsequently, Co0.85Se microsphere-like structures were obtained through selenization. Compared to Co(OH)F, the microsphere-like Co0.85Se structure exhibited outstanding catalytic activity for the hydrogen evolution reaction (HER) in a 1.0 M KOH solution. Electrocatalytic experiments demonstrated an exceptional HER performance by the Co0.85Se microspheres, characterized by a low overpotential of 148 mV and a Tafel slope of 55.7 mV dec-1. Furthermore, the Co0.85Se electrocatalyst displayed remarkable long-term stability, maintaining its activity for over 24 h. This remarkable performance is attributed to the excellent electrical conductivity of selenides and the highly electroactive sites present in the Co0.85Se structure compared to Co(OH)F, emphasizing its promise for advanced electrocatalytic applications.

Synthesis of a Ni(OH)2@Cu2Se hetero-nanocage by ion exchange for advanced glucose sensing in serum and beverages.

Cu2Se nanosheets were coated on the surface of Ni(OH)2 nanocages (NCs) by ion exchange driven by selenium incorporation. The resulting Ni(OH)2@Cu2Se hollow heterostructures (Ni(OH)2@Cu2Se HHSs) showed high electrical conductivity and electrocatalytic activities derived from the synergistic effects of Ni/Cu phases. These structures enhanced glucose adsorption abilities, confirmed by density function theory (DFT) calculations, and the robustness of the integrated nano-electrocatalyst. Remarkably, Ni(OH)2@Cu2Se HHSs modified electrodes excited excellent glucose sensing behavior with a wide linear range (0.001-7.5 mM), a sensitivity up to 2420.4 Μa mM-1 cm2, a low limit of detection (LOD, 0.15 µM), and fast response (less 2 s). Furthermore, Ni(OH)2@Cu2Se HHSs competently analyzed glucose in serum and beverages with good recoveries ranging from 94.4 to 103.6%. Integrating copper selenide and Ni-based materials as 3D hollow heterostructures expands the selection of electrocatalysts for sensitive glucose detection in food and biological samples.

Performance Enhancement in Powder-Fabricated Cu2(ZnSn)Se4 Solar Cell by Roll Compression.

Despite the improved conversion efficiency of Cu2(ZnSn)Se4 (CZTSe) solar cells, their roll-to-roll fabrication nonetheless leads to low performance. The selenization time and temperature are typically considered major parameters for a powder-based CZTSe film; meanwhile, the importance of the densification during the roll-to-roll process is often overlooked. The densification process is related to the porosity of the light-absorbing layer, where high porosity lowers cell performance. In this study, we fabricated a dense CZTSe absorber layer as a method of controlling the compression of a powder precursor (Cu1.7(Zn1.2Sn1.0)S4.0 (CZTS)) during the roll-press process. The increased particle packing density of the CZTS layer was crucial in sintering the powder layer into a dense film and preventing severe selenization of the Mo back electrode. The pressed absorber layer of the CZTSe solar cell exhibited a more uniform chemical composition determined using dynamic secondary ion mass spectrometry (SIMS). Under the AM 1.5G illumination condition, the power conversion efficiency of the pressed solar cell was 6.82%, while the unpressed one was 4.90%.

Onion and garlic polysaccharides: A review on extraction, characterization, bioactivity, and modifications.

Allium cepa (onion) and Allium sativum (garlic) are important members of the Amaryllidaceae (Alliaceae) family and are being used both as food and medicine for centuries in different parts of the world. Polysaccharides have been extracted from different parts of onion and garlic such as bulb, straw and cell wall. The current literature portrays several studies on the extraction of polysaccharides from onion and garlic, their modification and determination of their structural (molecular weight, monosaccharide unit and their arrangement, type and position of glycosidic bond or linkage, degree of polymerization, chain conformation) and functional properties (emulsifying property, moisture retention, hygroscopicity, thermal stability, foaming ability, fat-binding capacity). In this line, this review, summarizes the various extraction techniques used for polysaccharides from onion and garlic, involving methods like solvent extraction method. Furthermore, the antioxidant, anticancer, immunomodulatory, antimicrobial, anti-inflammatory, and antidiabetic properties of onion and garlic polysaccharides as reported in in vivo and in vitro studies are also critically assessed in this review. Different studies have proved onion and garlic polysaccharides as potential antioxidant and immunomodulatory agent. Studies have implemented to improve the functionality of onion and garlic polysaccharides through various modification approaches. Further studies are warranted for utilizing onion and garlic polysaccharides in the food, nutraceutical, pharmaceutical and cosmetic industries.