Pressure-induced orientation control of the growth of epitaxial silicon nanowires.
Nano Lett
; 8(8): 2310-4, 2008 Aug.
Article
in En
| MEDLINE
| ID: mdl-18624392
ABSTRACT
Single crystal silicon nanowires (SiNWs) were synthesized with silane reactant using Au nanocluster-catalyzed one-dimensional growth. We have shown that under our experimental conditions, SiNWs grown epitaxially on Si(111) via the vapor-liquid-solid growth mechanism change their growth direction as a function of the total pressure. Structural characterization of a large number of samples shows that SiNWs synthesized at a total pressure of 3 mbar grow preferentially in the 111 direction, while the one at 15 mbar favors the 112 direction. Specifically by dynamically changing the system pressure during the growth process morphological changes of the NW growth directions along their length have been demonstrated.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nano Lett
Year:
2008
Type:
Article
Affiliation country:
Austria