Enhanced photon generation in a Nb/n-InGaAs/p-InP superconductor/semiconductor-diode light emitting device.

Sasakura, H; Kuramitsu, S; Hayashi, Y; Tanaka, K; Akazaki, T; Hanamura, E; Inoue, R; Takayanagi, H; Asano, Y; Hermannstädter, C; Kumano, H; Suemune, I

Sasakura, H; Kuramitsu, S; Hayashi, Y; Tanaka, K; Akazaki, T; Hanamura, E; Inoue, R; Takayanagi, H; Asano, Y; Hermannstädter, C; Kumano, H; Suemune, I.

Affiliation

Sasakura H; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan. hirotaka@eng.hokudai.ac.jp

Phys Rev Lett ; 107(15): 157403, 2011 Oct 07.

Article in En | MEDLINE | ID: mdl-22107319

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Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2011 Type: Article Affiliation country: Japan

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Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev Lett Year: 2011 Type: Article Affiliation country: Japan