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The mechanism underlying silicon oxide based resistive random-access memory (ReRAM).
Chen, Yu-Li; Ho, Mon-Shu; Lee, Wen-Jay; Chung, Pei-Fang; Balraj, Babu; Sivakumar, Chandrasekar.
Affiliation
  • Chen YL; Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan.
Nanotechnology ; 31(14): 145709, 2020 Apr 03.
Article in En | MEDLINE | ID: mdl-31846950
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Clinical_trials / Prognostic_studies Language: En Journal: Nanotechnology Year: 2020 Type: Article Affiliation country: Taiwan
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Clinical_trials / Prognostic_studies Language: En Journal: Nanotechnology Year: 2020 Type: Article Affiliation country: Taiwan