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Special Issue: Nanowire Field-Effect Transistor (FET).
Seoane, Natalia; García-Loureiro, Antonio; Kalna, Karol.
Affiliation
  • Seoane N; Centro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain.
  • García-Loureiro A; Centro Singular de Investigación en Tecnoloxías Intelixentes, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain.
  • Kalna K; Nanoelectronic Devices Computational Group, College of Engineering, Swansea University, Swansea SA1 8EN, Wales, UK.
Materials (Basel) ; 13(8)2020 Apr 14.
Article in En | MEDLINE | ID: mdl-32295217
ABSTRACT
This Special Issue looks at recent developments in the research field of Nanowire Field-Effect Transistors (NW-FETs), covering different aspects of technology, physics, and modelling of these nanoscale devices. In this summary, we present seven outstanding articles on NW-FETs by providing a brief overview of the articles' content.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2020 Type: Article Affiliation country: Spain
Fulltext
Print
XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Materials (Basel) Year: 2020 Type: Article Affiliation country: Spain